Lattice parameter determination of a composition controlled Si1-x Gex layer on a Si (001) substrate using convergent-beam electron diffraction

2004 ◽  
Vol 53 (6) ◽  
pp. 593-600 ◽  
Author(s):  
T. Akaogi
Keyword(s):  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Parameter Determination ◽  
Beam Electron ◽  
Convergent Beam

Lattice parameter measurement by convergent-beam electron diffraction

1994 ◽  
Vol 52 ◽  
pp. 952-953
Author(s):  
J. M. Howe
Keyword(s):  
Electron Microscopy ◽  
Electron Diffraction ◽  
Lattice Parameter ◽  
Convergent Beam Electron Diffraction ◽  
Lattice Parameters ◽  
Parameter Measurement ◽  
Parameter Determination ◽  
Beam Electron ◽  
Lattice Parameter Measurement ◽  
Convergent Beam

Convergent-beam electron diffraction (CBED) should be an ideal technique for determining the lattice parameters of regions as small as a nanometer in size. This capability was first demonstrated about fifteen years ago and CBED has been used in a number of analyses since this time. In general though, the technique has been slow to catch on, except in the semiconductor area, where CBED has been usedextensively to measure lattice parameters in Si/SixGe1-x superlattices. Possible reasons for the slow adoption of this technique by the electron microscopy and materials science communities may be that: 1) CBED is usually dynamical, and it has become apparent that the use of simple kinematical calculations can lead to substantial errors (or at least some uncertainty) in quantitative lattice parameter determination, 2) a standardized procedure for determining the lattice parameters in the most general case, when six parameters are unknown, has not been established, and 3) surface relaxation associated with the thin foils used in transmission electron microscopy (TEM) may distort the sample and cause it to be unlike bulk material. The purpose of this paper is to assess the present status of lattice parameter measurement by CBED, particularly with respect to the three areas just mentioned.

Determination of space group of BaPb0.75Bi0.25O3 by convergent-beam electron diffraction

2002 ◽  
Vol 382 (4) ◽  
pp. 422-430 ◽  
Author(s):  
Takuya Hashimoto ◽  
Kenji Tsuda ◽  
Junichiro Shiono ◽  
Junichiro Mizusaki ◽  
Michiyoshi Tanaka
Keyword(s):  
Electron Diffraction ◽  
Convergent Beam Electron Diffraction ◽  
Beam Electron ◽  
Space Group ◽  
Convergent Beam

High Sensitivity Convergent Beam Electron Diffraction for the Determination of the Tetragonal Distortion of Epitaxial Films

1999 ◽  
Vol 589 ◽  
Author(s):  
C. Schuer ◽  
M. Leicht ◽  
T. Marek ◽  
H.P. Strunk
Keyword(s):  
Electron Diffraction ◽  
High Sensitivity ◽  
Diffraction Theory ◽  
Gaas Layer ◽  
Convergent Beam Electron Diffraction ◽  
Epitaxial Films ◽  
Tetragonal Distortion ◽  
Beam Electron ◽  
Convergent Beam

AbstractWe have optimized the sensitivity of convergent beam electron diffraction (CBED) by orienting the specimen such that the central (000) diffraction disc shows a pattern of defect lines that are most sensitive to tetragonal distortion. We compare the position of these lines in the experimentally obtained patterns with results from computer simulations, which need to be based on dynamical diffraction theory. In both experimental and simulated patterns the positions of the defect lines are determined by applying a Hough transformation. As a result of this optimized approach, we can measure the tetragonal distortion of a low temperature grown GaAs layer as low as 0.04%.

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