The Microstructural Characterization of Nanocrystalline CeO2 Ceramics Produced by the Sol-Gel Method

1994 ◽  
Vol 343 ◽  
Author(s):  
F. Czerwinski ◽  
J.A. Szpunar
Keyword(s):  
Sol Gel ◽  
Microstructural Characterization ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Structure Of Coatings ◽  
Heating Up

ABSTRACTCeO2 ceramics were manufactured in the form of surface coatings deposited onto various substrates by sol-gel technology. The size of the CeO2 crystallites, dried at room temperature, was about 5 nm and did not change significantly after heating, up to 680 K. Further increase of the temperature resulted in a rapid growth of crystallites. The process of growth depends also on the film thickness and nature of substrate. The results obtained using thermogravimetric analysis (TGA) and infrared spectroscopy (IR) demonstrated that the thermal decomposition of gel was completed at about 750 K. There was no evident texture in both the as-deposited state and after heat-treatment. X-ray diffraction (XRD), the atomic force microscopy (AFM), and transmission electron microscopy (TEM) were used to characterize the structure of coatings. The examples of application of CeO2 ceramics as coatings for high temperature corrosion protection are presented. The role of size of CeO2 particles in modification of grain boundary transport is discussed.

Epitaxial Growth and Characterization of the Ordered Vacancy Compound CuIn3Se5 on GaAs (100) Fabricated by Molecular Beam Epitaxy

1994 ◽  
Vol 340 ◽  
Author(s):  
Art J. Nelson ◽  
M. Bode ◽  
G. Horner ◽  
K. Sinha ◽  
John Moreland
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
Symmetric Vibration ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

ABSTRACTEpitaxial growth of the ordered vacancy compound (OVC) CuIn3Se5 has been achieved on GaAs (100) by molecular beam epitaxy (MBE) from Cu2Se and In2Se3 sources. Electron probe microanalysis and X-ray diffraction have confirmed the composition for the 1-3-5 OVC phase and that the film is single crystal Culn3Se5 (100). Transmission electron microscopy (TEM) characterization of the material also showed it to be single crystalline. Structural defects in the layer consisted mainly of stacking faults. Photoluminescence (PL) measurements performed at 7.5 K indicate that the bandgap is 1.28 eV. Raman spectra reveal a strong polarized peak at 152 cm−1, which is believed to arise from the totally symmetric vibration of the Se atoms in the lattice. Atomic force microscopy reveals faceting in a preferred (100) orientation.

Mechanical Stress, Grain-boundary Relaxation, and Oxidation of Sputtered CuNi(Mn) Films

1999 ◽  
Vol 14 (4) ◽  
pp. 1286-1294 ◽  
Author(s):  
W. Brückner ◽  
W. Pitschke ◽  
S. Baunack ◽  
J. Thomas
Keyword(s):  
Grain Boundary ◽  
Microstructural Characterization ◽  
Excess Vacancy ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Boundary Relaxation ◽  
20 Nm ◽  
Atomic Rearrangement

This paper focuses on understanding stress development in CuNi42Mn1 thin films during annealing in Ar. In addition to stress-temperature measurements, resistance-temperature investigations and chemical and microstructural characterization by Auger electron spectroscopy, scanning and transmission electron microscopy, x-ray diffraction, and atomic force microscopy were also carried out. The films are polycrystalline with a grain size of 20 nm up to 450 °C. To explain the stress evolution above 120 °C, atomic rearrangement (excess-vacancy annihilation, grain-boundary relaxation, and shrinkage of grain-boundary voids) and oxidation were considered. Grain-boundary relaxation was found to be the dominating process up to 250–300 °C. A sharp transition from compressive to tensile stress between 300 and 380 °C is explained by the formation of a NiO surface layer due to reaction with the remaining oxygen in the Ar atmosphere. This oxidation is masking the inherent structural relaxation above 300 °C.

scholarly journals Influence of hematite nanorods on the mechanical properties of epoxy resin

2017 ◽  
Vol 82 (4) ◽  
pp. 437-447 ◽  
Author(s):  
Gordana Bogdanovic ◽  
Tijana Kovac ◽  
Enis Dzunuzovic ◽  
Milena Spírková ◽  
Phillip Ahrenkiel ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Epoxy Resin ◽  
Microstructural Characterization ◽  
Uniform Size ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Uniform Size Distribution ◽  
Tensile Toughness

The mechanical properties of nanocomposites obtained by incorporation of fairly uniform hematite nanorods (?-Fe2O3 NRs) into epoxy resin were studied as a function of the content of the inorganic phase. A thorough microstructural characterization of the ?-Fe2O3 NRs and the nanocomposites was performed using transmission electron microscopy (TEM) and atomic force microscopy (AFM). The TEM measurements revealed rod-like morphology of the nanofiller with a uniform size distribution (8.5 nm?170 nm, diameter?length). High-magnification TEM and AFM measurements indicated agglomeration of ?-Fe2O3 NRs embedded in the epoxy resin. Stress at break, strain at break, elastic modulus and tensile toughness of the nanocomposites were compared with the data obtained for pure epoxy resin. Significant influence of nanofiller on the mechanical properties of epoxy resin, as well as on the glass transition temperature, could be noticed for samples with low contents of the inorganic phase (up to 1 wt. %).

Microstructural Characterization of 3C-SiC Thin Films Grown by Flash Lamp Induced Liquid Phase Epitaxy

2005 ◽  
Vol 483-485 ◽  
pp. 295-298 ◽  
Author(s):  
Gabriel Ferro ◽  
D. Panknin ◽  
Efstathios K. Polychroniadis ◽  
Yves Monteil ◽  
Wolfgang Skorupa ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Structural Characteristics ◽  
Microstructural Characterization ◽  
Si Substrate ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

Thin 3C-SiC films epitaxially grown on Si-substrate are substantially improved by the FLASIC process, which involves irradiation with flash lamps with pulse duration of 20ms. The disadvantages of the standard FLASIC process are the undulations introduced in the SiC film due to melting of the Si-substrate and the Si mass transport near the SiC/Si interface during the flash. An improved structure was realised in order to minimize the undulations of the SiC, improving also the quality of the film. This structure involves the deposition of a silicon overlayer (SOL) on the initial SiC layer, followed by an additional SiC capping layer acting as a source for SiC transfer by liquid phase epitaxy to the lower SiC layer. Significant mass SiC transport from the upper to the lower SiC layer through the SOL occurs during the flash. The new structure is characterized as inverse - FLASiC. The structural characteristics of the new structure were studied by transmission electron microscopy and atomic force microscopy.

scholarly journals Sol-gel synthesis and study of neodymium substitution effects in Co-Al-Nd-O system with possible applications as novel inorganic pigments

2012 ◽  
Vol 10 (5) ◽  
pp. 1574-1583 ◽  
Author(s):  
Dalia Jonynaite ◽  
Darius Jasaitis ◽  
Rimantas Raudonis ◽  
Algirdas Selskis ◽  
Remigijus Juskenas ◽  
...  
Keyword(s):  
Sol Gel ◽  
Substitution Effects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sol Gel Process ◽  
New Compounds ◽  
Sol Gel Synthesis

AbstractIn the present work, the formation of cobalt aluminium spinel (CoAl2O4) as well as novel cobalt neodymium-aluminates with nominal compositions of CoAl1.75Nd0.25O4, CoAl1.5Nd0.5O4 and CoAlNdO4 by an aqueous sol-gel process and the sinterability of the products are investigated. The metal ions, generated by dissolving starting materials of metals in the diluted acetic acid were complexed by 1,2-ethanediol to obtain the precursors for the mixed metal ceramics. The phase purity of the synthesized compounds was characterized by powder X-ray diffraction analysis and infrared spectroscopy. The microstructural evolution and morphological features of the products were studied by scanning electron microscopy and atomic force microscopy, which together with the optical characterization of these new compounds showed that the sol-gel-derived materials could be successfully used as effective cobalt-based ceramic pigments.

Characterization of Ultra-Thin PtSi Films for Infrared Detectors

1995 ◽  
Vol 402 ◽  
Author(s):  
H. Bender ◽  
P. Roussel ◽  
S. Kolodinski ◽  
A. Torres ◽  
R. A. Donaton ◽  
...  
Keyword(s):  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Rapid Thermal Annealing Process ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Thermal Annealing Process ◽  
Deposition Techniques

AbstractTransmission electron microscopy and grazing incidence X-ray diffraction are used for the structural characterization of ultra-thin PtSi layers on (100) silicon prepared by a two-step rapid thermal annealing process. The roughness of the layers is investigated with atomic force microscopy. Two deposition techniques for the initial Pt layer are compared.

Fabrication and Characterization of Stacked Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots Grown by MOCVD

2014 ◽  
Vol 896 ◽  
pp. 215-218
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
A. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Metal Organic ◽  
Self Assembled

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

PREPARATION AND CHARACTERIZATION OF LaFeO3 THIN FILMS ON (100) SrTiO3 SUBSTRATES BY PULSED LASER DEPOSITION

2011 ◽  
Vol 01 (03) ◽  
pp. 363-367 ◽  
Author(s):  
HONG LIU ◽  
JIANGUO ZHU ◽  
DINGQUAN XIAO
Keyword(s):  
Pulsed Laser Deposition ◽  
Quantum Interference ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A single-crystalline, crack-free, epitaxial (100)c LaFeO3 films were in situ grown by pulsed laser deposition on (100) SrTiO3 substrates. X-ray diffraction, atomic force microscopy and transmission electron microscopy reveal that the LaFeO3 films have high crystalline quality, a very smooth surface, and an atomically sharp LaFeO3/SrTiO3 interface. The magnetic properties of the LaFeO3 films were obtained by a superconducting quantum interference device magnetometry. The saturated magnetization and coercive field of LaFeO3 films are 14 emu/cm3 and 600 Oe, respectively.

Microstructural Characterization of Low Temperature GaAs(111)B MBE Growth by AFM and Tem

1992 ◽  
Vol 280 ◽  
Author(s):  
M. P. de Boer ◽  
J. E. Angelo ◽  
A. M. Dabiran ◽  
P. I. Cohen ◽  
W. W. Gerberich
Keyword(s):  
Low Temperature ◽  
Microstructural Characterization ◽  
Cross Sectional ◽  
Plan View ◽  
Mbe Growth ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Low Temperature Gaas

ABSTRACTAtomic Force Microscopy (AFM) images are correlated with Transmission Electron Microscopy (TEM) plan-view images in a structure consisting of <111> oriented GaAs layers grown by molecular beam epitaxy (MBE) at 500°C. We present results on the applicability of AFM, which requires short sample preparation and imaging time relative to TEM, in obtaining information on twin density and growth pits of these low temperature samples. Also, we discuss the behavior of twin boundaries by comparing plan-views and cross sectional TEM images.

scholarly journals Synthesis and Characterization of Nitrogen-doped Carbon Nanotubes Derived from g-C3N4

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1349 ◽  
Author(s):  
Klaudia Maślana ◽  
Ryszard J. Kaleńczuk ◽  
Beata Zielińska ◽  
Ewa Mijowska
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Nitrogen Doped ◽  
Atomic Force ◽  
Transmission Electron ◽  
Nitrogen Doped Carbon

Here, nitrogen-doped carbon nanotubes (CNT-N) were synthesized using exfoliated graphitic carbon nitride functionalized with nickel oxides (ex-g-C3N4-NixOy). CNT-N were produced at 900 °C in two steps: (1) ex-g-C3N4-NixOy reduction with hydrogen and (2) ethylene assisted chemical vapor deposition (CVD). The detailed characterization of the produced materials was performed via atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD) and thermogravimetric analysis (TGA). The possible mechanism of nanotubes formation is also proposed.

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