Growth of Rock-Salt and Spinel Structured Oxides on α-Al2O3, c-ZrO2 and MgO

1994 ◽  
Vol 343 ◽  
Author(s):  
Sundar Ramamurthy ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Rock Salt ◽  
Low Voltage ◽  
Orientation Relationships ◽  
Plan View ◽  
Transmission Electron ◽  
Crystal Films ◽  
Α Al2o3

ABSTRACTPulsed-laser deposition has been used to grow thin films of the rock-salt and spinel structured oxides NiO, CoO and C03O4 on single-crystal substrates of α-Al2O3, MgO and C-Z1O2. The resultant microstructures were characterized in plan-view by transmission electron microscopy and by low-voltage scanning electron microscopy. In all the depositions, the parameters could be controlled to grow predominantly single-crystal films. In the NiO/(0001)α-Al2O3 and CoO/(100)c-ZrO2 systems, {111}-oriented films were observed which were found to be twinned close to 60° and 90° about <111> respectively. Growth of cobalt oxide films on (100) MgO at 800°C and 15 mTorr of oxygen produced {100}-oriented domains of C03O4 meeting at antiphase boundaries. These observations and other recent studies re-emphasize the role of substrate crystallography in governing the orientation relationships in the overlayer.

Evaporated Titanium Films on Rocksalt

1967 ◽  
Vol 25 ◽  
pp. 296-297
Author(s):  
Frank E. Wawner ◽  
Kenneth R. Lawless
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Electron Diffraction ◽  
Single Crystal ◽  
High Purity ◽  
Early Stages ◽  
Transmission Electron ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Purity Titanium

Thin single crystal films of high purity titanium were needed in our laboratory for investigations of the early stages of the oxidation of titanium. Experiments were carried out to determine the feasibility of preparing single crystal titanium films of different orientations by evaporation onto the (100), (110) and (111) surfaces of rocksalt. The structures of these films were investigated by transmission electron microscopy and electron diffraction.

PVD Growth of FCC Metal Films On Single Crystal Si And Ge Substrates

1999 ◽  
Vol 562 ◽  
Author(s):  
K. H. Westmacott ◽  
S. Hinderberger ◽  
T. Radetic ◽  
U. Dahmen
Keyword(s):  
Single Crystal ◽  
Physical Vapor Deposition ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Plan View ◽  
Fcc Metals ◽  
Transmission Electron ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Fcc Metal

ABSTRACTEpitaxial films of the fcc metals Al, Au, Ag and Ni were grown by physical vapor deposition on Si and Ge (111), (110) and (100) substrates at different deposition temperatures. The epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction in plan view and cross section. Ag formed single crystal films on all substrates at all temperatures. Au and Al could be grown as bicrystals, and under some conditions, Al and Ni grew as tricrystal films. The morphological effects of diffusion at the metal/substrate interface are ascribed to diffusion induced grain boundary migration.

Orientation Relationships between BCC Deposits and FCC Substrates

1987 ◽  
Vol 94 ◽  
Author(s):  
David A. Smith ◽  
Armin Segmüller ◽  
A. R. Taranko
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Grazing Incidence ◽  
X Ray Diffraction ◽  
Orientation Relationships ◽  
X Ray ◽  
Bcc Metals ◽  
Transmission Electron ◽  
Deposited Films

ABSTRACTOriented deposits are commonplace in vapor deposited films. The origins of this behavior are not always clear. Various bcc metals (Fe, Nb, Mo, Ta, Cr) have been deposited onto single crystal fcc substrates (Au, Ni, MgO, Si, NaCI) which were selected with the intention of varying the character of the substrate-deposit interaction. The resulting structures have been characterized by transmission electron microscopy and grazing incidence x-ray diffraction. The observed variants of the cube-cube and Nishiyama-Wassermann orientation relationship can be understood in terms of minimization of misfit except when there is a weak interaction between substrate and deposit.

Pvd Growth of Fcc Metal Films on Single Crystal Si and Ge Substrates

1999 ◽  
Vol 577 ◽  
Author(s):  
K.H. Westmacott ◽  
S. Hinderberger ◽  
T. Radetic and U. Dahmen
Keyword(s):  
Single Crystal ◽  
Physical Vapor Deposition ◽  
Boundary Migration ◽  
Grain Boundary Migration ◽  
Plan View ◽  
Fcc Metals ◽  
Transmission Electron ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Fcc Metal

ABSTRACTEpitaxial films of the fcc metals Al, Au, Ag and Ni were grown by physical vapor deposition on Si and Ge (111), (110) and (100) substrates at different deposition temperatures. The epitaxial relationships and morphological features of these films were characterized by transmission electron microscopy and diffraction in plan view and cross section. Ag formed single crystal films on all substrates at all temperatures. Au and Al could be grown as bicrystals, and under some conditions, Al and Ni grew as tricrystal films. The morphological effects of diffusion at the metal/substrate interface are ascribed to diffusion induced grain boundary migration.

Evaporated Copper Deposits on Nickel Substrates

1967 ◽  
Vol 25 ◽  
pp. 298-299
Author(s):  
William L. Goodman ◽  
Kenneth R. Lawless
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
High Purity ◽  
Room Temperature ◽  
Copper Deposits ◽  
Transmission Electron ◽  
Crystal Films ◽  
Nickel Substrates ◽  
Thin Wedge

The structure of thin copper electrodeposits on single crystal nickel substrates has been previously studied in this laboratory. We thought it would be desirable to prepare similar bi-crystal films by the evaporation of copper onto nickel so that a comparison of the structures obtained by the two methods of deposition could be made. For this purpose, single crystal nickel films of (100), (110) and (111) orientations were prepared by evaporation onto heated (410°C) rocksalt substrates. Without breaking the vacuum, copper was evaporated in the form of a thin wedge onto the nickel surfaces after the nickel was cooled to room temperature. High purity (99.999%) metals were used, and these were thoroughly outgassed before evaporation. The thickness gradient of copper was obtained by moving a shutter between the substrate and the copper source during the evaporation. The resulting bi-crystal films were then stripped from the rocksalt and examined by transmission electron microscopy.

scholarly journals Transmission Electron Microscopy Study of Thick Copper-304 Stainless Steel Multilayers

1993 ◽  
Vol 311 ◽  
Author(s):  
M. A. Wall ◽  
T. W. Barbee ◽  
T. Weihs
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Stainless Steel ◽  
304 Stainless Steel ◽  
Orientation Relationships ◽  
Plan View ◽  
Transmission Electron ◽  
Bcc Structure ◽  
20 Nm ◽  
Fcc Structure

ABSTRACTThick (10 to 25 μm), free-standing, equal layer thickness, Copper(Cu)-304 Stainless Steel(SS) multilayer foils, having periods of lnm to 100 nm, synthesized by magnetron sputter deposition, have been examined by plan view and cross-sectional transmission electron microscopy. Multilayer growth morphology, individual layer structure and crystallographic phase orientation relationships were characterized in this study. Electron Energy Loss filtered imaging of a 20 nm period multilayer cross-section was also performed and showed that nickel had diffused into the Cu layers from the SS during synthesis. X-ray powder diffraction scans were performed and analyzed. A pure deposit of 304SS was synthesized and had a metastable BCC structure. Multilayer samples having periods of 20 nm were found to have a coherent layered Cu(FCC)- SS(FCC) structure. At larger periods (50 & 100 nm) a bimodal Cu(FCC)-SS(FCC & BCC) structure was formed. These observations show that the 304SS will grow with a metastable BCC structure when sputter deposited. When layered with Cu(FCC) the 304SS has its equilibrium FCC structure at layer thicknesses up to 10nm as a result of epitaxy with the copper. At larger SS layer thicknesses the SS appears to locally transform to the metastable BCC structure during synthesis, refining the grain structure of the depositing SS layer and the subsequent Cu layer. This transformation significantly increases the strength of the larger period multilayer.

A TEM study of transient oxide scales on β-NiAl

1984 ◽  
Vol 42 ◽  
pp. 598-599
Author(s):  
J. Doychak
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Single Crystal ◽  
Metal Substrate ◽  
Oxide Scales ◽  
Orientation Relationships ◽  
Epitaxial Relationship ◽  
Transient Oxidation ◽  
Transmission Electron ◽  
Oxide Phases

The oxidation sequence of alumina forming alloys usually involves a period when transient, metastable phases of Al2O3 form rather than the thermoydnamically stable α-Al2O3 phase. The structures of these phases are spinel derivatives and are found to have a strong epitaxial relationship to the metal substrate. Using single-crystal β-NiAl doped with 0.1 wt.%Zr, the oxide phases that form in air at 800°C and the orientation relationships that exist between the oxides and metal substrate were determined using transmission electron microscopy. Once the transient oxidation stages are characterized, an understanding of the formation of stable α-Al2O3 scales can be more easily obtained.

Electron Microscopy of CuInSe2 polycrystalline films

1990 ◽  
Vol 48 (4) ◽  
pp. 704-705
Author(s):  
Ana Albu-Yaron ◽  
Lev Margulis ◽  
Gary Hodes ◽  
Rommel Noufi
Keyword(s):  
Electron Microscopy ◽  
Single Crystal ◽  
Cross Sections ◽  
Chemical Etching ◽  
Microstructural Properties ◽  
Mechanical Grinding ◽  
Plan View ◽  
Corning Glass ◽  
Transmission Electron ◽  
Thin Film Photovoltaics

Despite the continuing interest in and research on CuInSe2 (CIS) as one of the prime candidate materials for thin film photovoltaics, there are still many gaps in the knowledge and understanding of this material. One area where there is still much to be learned is the microstructural properties of the CIS film and the effect of the substrate on these properties. Relatively few groups have studied these aspects. We have recently described an aggregate macrostructure and its component microstructure. Here we report on the microstructure of individual crystallites in the CIS films grown on different substrate materials.CIS films were evaporated using 3 separate sources onto heated (350-450°C) substrates of Mocoated (∼ 0.6 μm) Si single crystal, Al2O3 and 7059 Corning glass. For the transmission electron microscopy (TEM) examinations plan-view specimens were prepared by plasma or chemical etching. Cross-sections of the films deposited on Si single crystal slices were prepared by standard mechanical grinding and polishing followed by thinning to perforation by Ar+ ion bombardment. The specimens were examined by TEM using a Philips EM400T microscope operated at 120 kV. The obtained results show the following trends.

Low Temperature - High Pressure Oxidation of 3C-SiC

1994 ◽  
Vol 357 ◽  
Author(s):  
Christine Caragianis-Broadbridge ◽  
Barbara L. Walden ◽  
Juliana Blaser ◽  
Cleva Ow Yang ◽  
David C. Paine
Keyword(s):  
Electron Microscopy ◽  
Low Temperature ◽  
Single Crystal ◽  
Photoelectron Spectroscopy ◽  
Pressure Oxidation ◽  
Planar Defects ◽  
Transmission Electron ◽  
Before And After ◽  
Crystal Films ◽  
Film Microstructure

AbstractSingle crystal films of n-type 3C-SiC were hydrothermally processed at pressures ranging from 10 to 70 MPa at 550°C. To study the effects of initial thin film microstructure on hydrothermal processing, two different samples of CVD-grown SiC were studied: one, 200 nm thick, contained low angle boundaries and a high density of planar defects; the other, 3500 nm thick, was planar and contained relatively few defects. Raman Spectroscopy, X-Ray Photoelectron Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) were used to study the chemistry and microstructure of the SiC material both before and after hydrothermal treatment. This study reveals that low temperature (T=550°C) oxidation of single crystal epitaxial SiC is possible but that the resulting oxide film microstructure is strongly dependent on the initial film microstructure and oxidation is greatly enhanced along low angle grain boundaries and on planar defects.

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