Monocrystalline and Polycrystalline Thin Films Formed by Cobalt Ion Implantation in the Organic Substrate (Polyester)

1994 ◽  
Vol 343 ◽  
Author(s):  
A. L. Stepanov ◽  
R. I. Khaibullin ◽  
S. N. Abdullin ◽  
Yu. N. Osin ◽  
I. B. Khaibullin
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Ion Implantation ◽  
Amorphous State ◽  
Organic Substrate ◽  
Crystalline Lattice ◽  
Cobalt Ion ◽  
Polycrystalline Thin Films ◽  
Transmission Electron ◽  
Diffraction Patterns

ABSTRACTThe structure and phase composition of thin films formed by 40 KeV cobalt ion implantation into organic substrate (polyester) were studied by transmission electron microscopy in conjunction with electron diffraction. Varying current density and dose implantation over the range 0.3×1016 – 2.4×1017 cm-2 we obtained island-like cobalt films of different type as well as labyrinth-like structure at the highest dose value. The granulometric and morphologic parameters were derived from the micrographs of the investigated films. Both amorphous state and α-Co crystalline lattice of cobalt granules were established from electron diffraction patterns of synthesized films. Along with discontinuous films, we formed monocrystalline plates of α-phase cobalt under the determined implantation regimes and conditions. Cross-section images of synthesized films showed that films are of about 300 Å thick and buried at the depth of 150 Å from the principal surface of the polyester.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

scholarly journals Формирование интерметаллида Cu-=SUB=-6-=/SUB=-Sn-=SUB=-5-=/SUB=- в тонких пленках Cu/Sn

2021 ◽  
Vol 63 (12) ◽  
pp. 2205
Author(s):  
Л.Е. Быкова ◽  
С.М. Жарков ◽  
В.Г. Мягков ◽  
Ю.Ю. Балашов ◽  
Г.С. Патрин
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Room Temperature ◽  
Hexagonal Phase ◽  
Film Sample ◽  
Cu6sn5 Phase ◽  
Bilayer Films ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Diffraction Patterns

The study of the formation of the Cu6Sn5 intermetallic compound in Sn(55nm)/Cu(30nm) thin bilayer films was carried out directly in the column of a transmission electron microscope (electron diffraction mode) by heating the film sample from room temperature to 300 °C and recording the electron diffraction patterns. The thin films formed as a result of a solid state reaction were monophase and consisted of the η-Cu6Sn5 hexagonal phase. The temperature range for the formation of the η-Cu6Sn5 phase was determined. The estimate of the effective interdiffusion coefficient of the reaction suggests that the main mechanism for the formation of the Cu6Sn5 intermetallic is diffusion along the grain boundaries and dislocations.

Electron Diffraction Effects in Multi-Layered (Overlapping) Palladium Single-Crystal Films

1971 ◽  
Vol 29 ◽  
pp. 190-191
Author(s):  
G. I. Wong ◽  
H. P. Singh ◽  
L. E. Murr
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Multiple Diffraction ◽  
Polycrystalline Thin Films ◽  
Crystalline Substrate ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Diffraction Effects ◽  
Vapor Deposit

Simple multiple diffraction effects dealing with scattered or re-entrant beams in single foils containing twins or crystalline phases giving rise to double diffraction are generally well known. In addition, multiple diffraction arising in two overlapping thin films such as a multiple vapor deposit or an oxide on a crystalline substrate or base film has been studied. There are very few, if any, studies which attempt to systematically describe the diffraction patterns arising from overlapped, rotated, and imperfect single and polycrystalline thin films. This study demonstrates the complicated electron diffraction patterns which can arise by multiple diffraction in laye redarrays of thin Pd films, and describes the origins of some of the observed reflections.

Automatic Crystallographic Characterization in a Transmission Electron Microscope: Applications to Twinning Induced Plasticity Steels and Al Thin Films

2013 ◽  
Vol 19 (3) ◽  
pp. 693-697 ◽  
Author(s):  
M. Galceran ◽  
A. Albou ◽  
K. Renard ◽  
M. Coulombier ◽  
P.J. Jacques ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Microscope ◽  
Electron Diffraction ◽  
Transmission Electron Microscope ◽  
Microstructural Characterization ◽  
Fine Grained ◽  
Mapping Tool ◽  
Transmission Electron ◽  
Kikuchi Lines ◽  
Diffraction Patterns

AbstractA new automated crystallographic orientation mapping tool in a transmission electron microscope technique, which is based on pattern matching between every acquired electron diffraction pattern and precalculated templates, has been used for the microstructural characterization of nondeformed and deformed aluminum thin films and twinning-induced plasticity steels. The increased spatial resolution and the use of electron diffraction patterns rather than Kikuchi lines make this tool very appropriate to characterize fine grained and deformed microstructures.

scholarly journals Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins

2009 ◽  
Vol 42 (2) ◽  
pp. 242-252 ◽  
Author(s):  
Cyril Cayron ◽  
Martien Den Hertog ◽  
Laurence Latu-Romain ◽  
Céline Mouchet ◽  
Christopher Secouard ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Silicon Nanowires ◽  
Si Nanowires ◽  
Silicon Thin Films ◽  
Transmission Electron ◽  
Diffraction Patterns

Odd electron diffraction patterns (EDPs) have been obtained by transmission electron microscopy (TEM) on silicon nanowires grownviathe vapour–liquid–solid method and on silicon thin films deposited by electron beam evaporation. Many explanations have been given in the past, without consensus among the scientific community: size artifacts, twinning artifacts or, more widely accepted, the existence of new hexagonal Si phases. In order to resolve this issue, the microstructures of Si nanowires and Si thin films have been characterized by TEM, high-resolution transmission electron microscopy (HRTEM) and high-resolution scanning transmission electron microscopy. Despite the differences in the geometries and elaboration processes, the EDPs of the materials show great similarities. The different hypotheses reported in the literature have been investigated. It was found that the positions of the diffraction spots in the EDPs could be reproduced by simulating a hexagonal structure withc/a= 12(2/3)1/2, but the intensities in many EDPs remained unexplained. Finally, it was established that all the experimental data,i.e.EDPs and HRTEM images, agree with a classical cubic silicon structure containing two microstructural defects: (i) overlapping Σ3 microtwins which induce extra spots by double diffraction, and (ii) nanotwins which induce extra spots as a result of streaking effects. It is concluded that there is no hexagonal phase in the Si nanowires and the Si thin films presented in this work.

scholarly journals Magnetic and Electric Properties of AmorphousCo40Fe40B20Thin Films

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Yuan-Tsung Chen ◽  
S. M. Xie
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Spin Exchange ◽  
Amorphous State ◽  
Magnetic Memory ◽  
X Ray Diffraction ◽  
Transmission Electron ◽  
Grain Size Distributions ◽  
Diffraction Patterns ◽  
Plane View

C40Fe40B20was deposited on a glass substrate to a thickness (tf) of between 100 Å and 500 Å. X-ray diffraction patterns (XRD) indicate thatC40Fe40B20films are in an amorphous state. The plane-view microstructures and grain size distributions of CoFeB thin films are observed under a high-resolution transmission electron microscope (HRTEM). The thicker CoFeB films have larger grain size distribution than thinner CoFeB films. The saturation magnetization (Ms) exhibits a size effect, meaning thatMsincreases astfincreases. The magnetic remanence magnetization (Mr) of CoFeB thin films are sensitive to thinner CoFeB films, and the refined grain size of thinner CoFeB films can induce ferromagnetic stronger spin exchange-coupling behavior than thicker CoFeB films, resulting in higher remanence. The highest magnetic squareness ratio (Mr/Ms) of the CoFeB films occurs at thickness of 100 Å, suggesting the 100 Å of the as-deposited CoFeB film is suitable for magnetic memory application. These results also demonstrate that coercivity (Hc) is increased by an increase in the width of the distribution of grain sizes. The electrical resistivity (ρ) of such a film is typically higher than normally exceeding 100 μΩ cm, revealing that the amorphous phase dominates. These results are consistent with the XRD results.

An Interactive Minicomputer Program for the Indexing and Simulation of Electron Diffraction Patterns

1976 ◽  
Vol 34 ◽  
pp. 542-543
Author(s):  
R.P. Goehner ◽  
W.T. Hatfield ◽  
Prakash Rao
Keyword(s):  
Electron Diffraction ◽  
Real Time ◽  
Pattern Analysis ◽  
Flow Diagram ◽  
Hard Copy ◽  
Time Analysis ◽  
Real Time Analysis ◽  
Transmission Electron ◽  
One Step ◽  
Diffraction Patterns

Computer programs are now available in various laboratories for the indexing and simulation of transmission electron diffraction patterns. Although these programs address themselves to the solution of various aspects of the indexing and simulation process, the ultimate goal is to perform real time diffraction pattern analysis directly off of the imaging screen of the transmission electron microscope. The program to be described in this paper represents one step prior to real time analysis. It involves the combination of two programs, described in an earlier paper(l), into a single program for use on an interactive basis with a minicomputer. In our case, the minicomputer is an INTERDATA 70 equipped with a Tektronix 4010-1 graphical display terminal and hard copy unit.A simplified flow diagram of the combined program, written in Fortran IV, is shown in Figure 1. It consists of two programs INDEX and TEDP which index and simulate electron diffraction patterns respectively. The user has the option of choosing either the indexing or simulating aspects of the combined program.

Rocking Beam Microarea Diffraction Applied to Metallic thin Films

1976 ◽  
Vol 34 ◽  
pp. 396-397
Author(s):  
R. H. Geiss
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Small Area ◽  
Objective Lens ◽  
Electron Optics ◽  
Metallic Thin Films ◽  
Transmission Electron Diffraction ◽  
Transmission Electron ◽  
Sample Height ◽  
Scanning Transmission

The theory and practical limitations of micro area scanning transmission electron diffraction (MASTED) will be presented. It has been demonstrated that MASTED patterns of metallic thin films from areas as small as 30 Åin diameter may be obtained with the standard STEM unit available for the Philips 301 TEM. The key to the successful application of MASTED to very small area diffraction is the proper use of the electron optics of the STEM unit. First the objective lens current must be adjusted such that the image of the C2 aperture is quasi-stationary under the action of the rocking beam (obtained with 40-80-160 SEM settings of the P301). Second, the sample must be elevated to coincide with the C2 aperture image and its image also be quasi-stationary. This sample height adjustment must be entirely mechanical after the objective lens current has been fixed in the first step.

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