Substrate Effects on the Structure and Optical Properties of Epitaxial PbTiO3 Thin Films Prepared by Metal-Organic Chemical Vapor Deposition

1994 ◽  
Vol 341 ◽  
Author(s):  
C. M. Foster ◽  
Z. Li ◽  
G. R. Bai ◽  
H. You ◽  
D. Guo ◽  
...  
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Refractive Indices ◽  
Bulk Single Crystal ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractEpitaxial PbTiOM3 films were prepared by metal-organic chemical vapor deposition (MOCVD) on MgO(001), SrTiO3 (001) and LaAlO3 (001) surfaces. Four-circle X-ray diffraction and optical waveguiding experiments were performed to characterize the deposited films. The films on all three substrates were single-crystal; however, the domain structure of the films was strongly dependent on the substrate material. Films on MgO and LaAlO3 substrates showed a large amount of 90° domain structures, whereas, the degree of twinning was greatly suppressed for films on SrTiO3. The refractive indices and optical birefringence of the films were measured as a function of wavelength using the film-prism coupling method. We found that for films on LaAlO3 (001), the ordinary index and for films on MgO(001) both the ordinary and extraordinary refractive indices were higher than those of bulk single-crystal PbTiO3. For films grown on SrTiO3 (001), the ordinary refractive index was very close to that of single crystal PbTiO3. We correlate the increased refractive index and the reduced birefringence to the degree of epitaxial strain and twinning in the samples, respectively.

Refractive index of III-metal-polar and N-polar AlGaN waveguides grown by metal organic chemical vapor deposition

2013 ◽  
Vol 102 (22) ◽  
pp. 221106 ◽  
Author(s):  
Martin Rigler ◽  
Marko Zgonik ◽  
Marc P. Hoffmann ◽  
Ronny Kirste ◽  
Milena Bobea ◽  
...  
Keyword(s):  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Catalyst-Assisted Large-Area Growth of Single-Crystal β-Ga2O3 Nanowires on Sapphire Substrates by Metal–Organic Chemical Vapor Deposition

Nanomaterials ◽  
2020 ◽  
Vol 10 (6) ◽  
pp. 1031 ◽  
Author(s):  
Chunyang Jia ◽  
Dae-Woo Jeon ◽  
Jianlong Xu ◽  
Xiaoyan Yi ◽  
Ji-Hyeon Park ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Large Area ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Transmission Test

In this work, we have achieved synthesizing large-area high-density β-Ga2O3 nanowires on c-plane sapphire substrate by metal–organic chemical vapor deposition assisted with Au nanocrystal seeds as catalysts. These nanowires exhibit one-dimensional structures with Au nanoparticles on the top of the nanowires with lengths exceeding 6 μm and diameters ranging from ~50 to ~200 nm. The β-Ga2O3 nanowires consist of a single-crystal monoclinic structure, which exhibits strong ( 2 ¯ 01) orientation, confirmed by transmission electronic microscopy and X-ray diffraction analysis. The PL spectrum obtained from these β-Ga2O3 nanowires exhibits strong emissions centered at ~360 and ~410 nm, respectively. The energy band gap of the β-Ga2O3 nanowires is estimated to be ~4.7 eV based on an optical transmission test. A possible mechanism for the growth of β-Ga2O3 nanowires is also presented.

A Drastic Change in Structure and Property of TiO2 Thin Films Deposited by Metal-Organic Chemical Vapor Deposition With Deposition Temperature

2000 ◽  
Vol 616 ◽  
Author(s):  
Jeong-Hoon Park ◽  
Woon-Jo Cho ◽  
Kug-Sun Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Refractive Index ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Deposition Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

AbstractTiO2 thin films were deposited by metal-organic chemical vapor deposition (MOCVD) method using titanium tetraisopropoxide(TTIP). A drastic change in structural aspect and its property occurred when the deposition temperature increased above 400°C. Deposition kinetics was proved to transit from reaction controlled regime into diffusion controlled regime above about 400°C in Arrehnius plot. In X-ray diffraction (XRD)and infrared reflectance spectra, it was observed that the crystallinity was decreased significantly around 400°C. The surface microstructure has changed explicitly from dense structure with larger grains to porous one with smaller grains observed by scanning electron microscopy and transmission electron microscopy. Electrical resistance of the films jumped by 2 orders of magnitude, which is measured by the 4-point probe method. The refractive index calculated by Swanepoel's method has decreased from 2.45 to 2.28 at 630nm. The porous microstructure of films deposited at above 400°C was thought to be responsible for the significant decrease in electrical conductivity and refractive index of the films.

Smooth surface of Bi-Sr-Ca-Cu-O thin films on the Y3Al5O12 (YAG) substrate

1994 ◽  
Vol 9 (5) ◽  
pp. 1104-1111 ◽  
Author(s):  
Nobuhiko Kubota ◽  
Yuh Shiohara ◽  
Shoji Tanaka
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Smooth Surface ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Axis Orientation ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

We prepared the superconducting Bi-Sr-Ca-Cu-O thin films on Y3Al5O12 (YAG) single crystal substrates by metal-organic chemical vapor deposition (MOCVD). This film of 50 nm thickness on a YAG substrate showed c-axis orientation clearly, and the zero-resistivity (Tc-zero) was achieved at 66 K. The film has the advantageous property of surface smoothness compared with the film fabricated on MgO and SrTiO3 single-crystal substrates. The surface property of the YAG substrate seems to influence the film quality.

Orientation and Morphology of LiCoO2 Prepared by Chemical Vapor Deposition on Al2O3 Single Crystal

2012 ◽  
Vol 508 ◽  
pp. 300-303 ◽  
Author(s):  
Hirokazu Katsui ◽  
Yamashita Yuji ◽  
Takashi Goto
Keyword(s):  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Single Crystals ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Lithium Cobaltate ◽  
Metal Organic ◽  
Surface Morphologies ◽  
Organic Chemical Vapor Deposition

Lithium Cobaltate (LiCoO2) Films Were Prepared on the (001), (110), (110) and (112) Planes of Al2O3 Single Crystals Substrates by Metal Organic Chemical Vapor Deposition, and the Phases, Orientated Textures and Surface Morphologies Were Examined. (001)-Oriented LiCoO2 Films Were Obtained on (001) and (110) Al2O3 Substrates, while (018)- and (104)-Oriented LiCoO2 Films Were Grown on (110) and (112) Al2O3 Substrate. Triangular and Elongated Rectangular Faceted Structures Were Directionally Aligned, and (001)- and (018)-Oriented Grains Were Epitaxially Grown on (001) and (110) Al2O3 Substrates. Randomly Arranged Polygonal Faceted Structures Were Observed in the (001)-Oriented Licoo2 Film on (110) Al2O3 Substrate, while Locally Inhomogeneous Grains Were Observed in the (104)-Oriented LiCoO2 Film on (1_,12) Al2O3 Substrate.

Low Resistivity Aluminum Nitride: Carbon (AIN:C) Films Grown by Metal Organic Chemical Vapor Deposition

1995 ◽  
Vol 395 ◽  
Author(s):  
K. Wongchotiqul ◽  
N. Chen ◽  
D. P. Zhang ◽  
X. Tang ◽  
M. G. Spencer
Keyword(s):  
Chemical Vapor Deposition ◽  
Aluminum Nitride ◽  
Partial Pressure ◽  
Single Crystal ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Low Resistivity ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTLow resistivity single crystal aluminum nitride-carbon (AIN:C) films were grown by metal organic chemical vapor deposition (MOCVD). The growth system used ammonia (NH3), trimethylaluminum (TMA), hydrogen (H2), and propane (C3H8) precursors. Films produced with high partial pressure of propane during growth exhibited high conductivity. Van der Paw measurements indicated that the resistivity of the as grown films changed dramatically from 108 ohm-cm for unintentionally doped samples to less than .2 ohm-cm for partial pressures of propane greater than 0.5×10−3 torr. Reflection electron diffraction (RHEED) measurements performed "in situ" just after film growth indicated that the material is single crystal up to a propane partial pressure of 2.5×10−3 torr. P-n junctions of n-type 6H-SiC and p-type AIN:C were fabricated, blue emission (centered at 490nm) was observed from the heterojunction under forward bias.

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