Oxidation and ion Damage of Diamond by Reactive Ion Etching

1994 ◽  
Vol 339 ◽  
Author(s):  
T. E. Beerling ◽  
C. R. Helms
Keyword(s):  
Carbon Materials ◽  
Reactive Ion Etching ◽  
Ion Bombardment ◽  
Diamond Surface ◽  
Hydrogen Ions ◽  
Ion Etching ◽  
Diamond Surfaces ◽  
Oxygen Ion ◽  
Ion Damage ◽  
Electron Energy Loss

ABSTRACTOxygen is a commonly used etchant of carbon materials, including diamond. In this work, we examine the effects of oxygen ion bombardment to diamond surfaces, as might be encountered in a reactive ion etching (RIE) process. Surfaces were characterized using Electron Energy Loss Spectroscopy (EELS) and Auger Electron Spectroscopy (AES). EELS was used to determine the presence of non-diamond carbon at the surface which may form due to ion damage. AES was used to determine the presence of oxygen on the diamond surface from oxygen ion bombardment. The effect of ambient molecular oxygen present during inert ion bombardment is also addressed. EELS was also used to determine the state of diamond surfaces that were bombarded with hydrogen ions, as might be used in the removal of adsorbed oxygen.

Fabrication of nano-needle arrays on diamond surface by reactive ion etching

2012 ◽  
Vol 1395 ◽  
Author(s):  
T. Misu ◽  
K. Koh ◽  
T. Arai
Keyword(s):  
Stainless Steel ◽  
Reactive Ion Etching ◽  
Polycrystalline Diamond ◽  
Diamond Surface ◽  
Stainless Steel Electrode ◽  
Sintered Ceramic ◽  
Ion Etching ◽  
Steel Electrode ◽  
Diamond Substrate ◽  
Substrate Surfaces

ABSTRACTCVD polycrystalline diamond surfaces were etched using reactive ion etching system with either a conventional stainless steel electrode or MgO sintered ceramic containing electrode. The micro-needle array of high aspect on diamond substrate surfaces obtained with MgO electrode was fabricated by using back-sputtering from MgO electrode. The RMS roughness of diamond substrate surfaces obtained with MgO electrode is higher than those obtained with stainless steel electrode.

scholarly journals Fast smoothing on diamond surface by inductively coupled plasma reactive ion etching

2019 ◽  
Vol 35 (5) ◽  
pp. 462-472
Author(s):  
Yuting Zheng ◽  
Jinlong Liu ◽  
Ruoying Zhang ◽  
Aude Cumont ◽  
Jue Wang ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Diamond Surface ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Image Position

Abstract

Low energy carbon ion bombardment on indium phosphide and its implications for alkane‐based reactive ion etching

1992 ◽  
Vol 71 (11) ◽  
pp. 5623-5628 ◽  
Author(s):  
P. F. A. Meharg ◽  
E. A. Ogryzlo ◽  
I. Bello ◽  
W. M. Lau
Keyword(s):  
Indium Phosphide ◽  
Reactive Ion Etching ◽  
Ion Bombardment ◽  
Low Energy ◽  
Ion Etching ◽  
Carbon Ion

Magnetron Enhanced Reactive Ion Etching in a Hexode System

1986 ◽  
Vol 68 ◽  
Author(s):  
Scott Bell ◽  
Thijs Bril
Keyword(s):  
Magnetic Field ◽  
Uniform Magnetic Field ◽  
Reactive Ion Etching ◽  
Ion Bombardment ◽  
Ion Flux ◽  
Ion Etching ◽  
Resulting Effect ◽  
Bombardment Energy

AbstractA method of forming a uniform magnetic field in a modified hexode type etch system is described.Experimental results of etching Si, SiO2 and photoresist with NF3 are presented.The magnetic field effectively increases the ion flux and decreases the energy of the ions bombarding the cathode.It was found that adding a magnetic field increases the etchrate of Si for the conditions studied, but for SiO2 and photoresist, the decreased ion bombardment energy leads to lower etchrates under certain conditions.The resulting effect on selectivities is discussed.

Magnetron Reactive Ion Etching of GaAs and AIGaAs in CH4/H2/Ar Plasmas.

1996 ◽  
Author(s):  
George F. McLane ◽  
Paul Cooke ◽  
Robert P. Moerkirk
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

Modification of the n-Surface Profile of AlGaInN LEDs by Changing the Gas-Mixture Composition During Reactive Ion Etching

2020 ◽  
Vol 54 (6) ◽  
pp. 672-676
Author(s):  
L. K. Markov ◽  
I. P. Smirnova ◽  
M. V. Kukushkin ◽  
A. S. Pavluchenko
Keyword(s):  
Reactive Ion Etching ◽  
Surface Profile ◽  
Mixture Composition ◽  
Gas Mixture ◽  
Ion Etching

Reactive ion etching of III-V compounds using C2H6/H2

1988 ◽  
Vol 24 (13) ◽  
pp. 798 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
T. Ohishi ◽  
H. Ogata
Keyword(s):  
Reactive Ion Etching ◽  
Ion Etching

GaInAsP/InP mass transport laser monolithically integrated with photodetector using reactive ion etching

1989 ◽  
Vol 25 (15) ◽  
pp. 954 ◽  
Author(s):  
T. Matsui ◽  
H. Sugimoto ◽  
K. Ohtsuka ◽  
Y. Abe ◽  
H. Ogata
Keyword(s):  
Mass Transport ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Monolithically Integrated
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