Wide area polycrystalline diamond coating and stress control by sp3 hot filament CVD reactor

2008 ◽  
Vol 516 (5) ◽  
pp. 696-699 ◽  
Author(s):  
Jerry W. Zimmer ◽  
Gerry Chandler ◽  
Tarun Sharda
2007 ◽  
Vol 16 (3) ◽  
pp. 609-615 ◽  
Author(s):  
S. Konoplyuk ◽  
T. Abe ◽  
T. Takagi ◽  
T. Uchimoto

2013 ◽  
Vol 845 ◽  
pp. 36-40
Author(s):  
Tze Mi Yong ◽  
Esah Hamzah

Multi-layer alternating nanocrystalline diamond (NCD) layer and polycrystalline diamond (PCD) layer was successfully deposited on pretreated tungsten carbide (WC) substrates with various seeding sizes (<0.1μm synthetic, <0.5μm synthetic, <0.25μm natural, <0.5μm natural, and <1μm natural) diamond with and without hammering by silicon carbide. X-rays penetrate through the coating to the substrate from XRD method was able to show strong peaks of diamond relative to WC despite the diamond film being 4μm thick only. It is found that substrates with no hammering produce stronger signals. The coating was cross sectioned and analysed using field emission scanning electron microscopy showing the multi-layer with NCD grains that has coalesced and columnar structure for PCD. None of the diamond coating delaminated during cross sectioning showing good adhesion. Raman was able to capture data from the 1-1.6μm thick NCD layer only while AFM measured the extreme low roughness of the NCD surface.


2012 ◽  
Vol 2 (2) ◽  
pp. 115-120 ◽  
Author(s):  
Maneesh Chandran ◽  
Chittu R. Kumaran ◽  
Sriram Vijayan ◽  
Subramshu S. Bhattacharya ◽  
M.S. Ramachandra Rao

1994 ◽  
Vol 339 ◽  
Author(s):  
G. Zhao ◽  
T. Stacy ◽  
E. M. Charlson ◽  
E. J. Charlson ◽  
M. Hajsaid ◽  
...  

ABSTRACTWe are reporting the first quantitative photoresponse characteristics of boron doped hot-filament CVD (HFCVD) diamond based Schottky diodes using semi-transparent aluminum contacts in the spectral range of 300–1050 nm. Quantum efficiencies, obtained without correction for surface reflection in the visible and near UV region, were between 5 % and 10% when the diodes were unbiased. Effect of reverse bias on the photoresponse was investigated at selected photon energies. Reverse biased diodes exhibit increasing photoresponse and ultimately saturation. Quantum efficiency as high as 30% was also obtained at 500 nm, when a reverse bias of over I volt was applied. The photoresponse mechanism of CVD diamond Schottky diodes is also discussed. A Schottky barrier height of 1.15 ± 0.02 eV for Al-HFCVD diamond contacts was determined using the d.c. photoelectric method.


1996 ◽  
Vol 11 (7) ◽  
pp. 1765-1775 ◽  
Author(s):  
James M. Olson ◽  
Michael J. Dawes

Thin diamond film coated WC-Co cutting tool inserts were produced using arc-jet and hot-filament chemical vapor deposition. The diamond films were characterized using SEM, XRD, and Raman spectroscopy to examine crystal structure, fracture mode, thickness, crystalline orientation, diamond quality, and residual stress. The performance of the tools was evaluated by comparing the wear resistance of the materials to brazed polycrystalline diamond-tipped cutting tool inserts (PCD) while machining A390 aluminum (18% silicon). Results from the experiments carried out in this study suggest that the wear resistance of the thin diamond films is primarily related to the grain boundary strength, crystal orientation, and the density of microdefects in the diamond film.


1996 ◽  
Vol 423 ◽  
Author(s):  
S. Mirzakuchaki ◽  
H. Golestanian ◽  
E. J. Charlson ◽  
T. Stacy

AbstractAlthough many researchers have studied boron-doped diamond thin films in the past several years, there have been few reports on the effects of doping CVD-grown diamond films with phosphorous. For this work, polycrystalline diamond thin films were grown by hot filament chemical vapor deposition (HFCVD) on p-type silicon substrates. Phosphorous was introduced into the reaction chamber as an in situ dopant during the growth. The quality and orientation of the diamond thin films were monitored by X-ray diffraction (XRD) and scanning electron microscopy (SEM). Current-voltage (I-V) data as a function of temperature for golddiamond film-silicon-aluminum structures were measured. The activation energy of the phosphorous dopants was calculated to be approximately 0.29 eV.


Author(s):  
Alberto Argoitia ◽  
Christopher S. Kovach ◽  
John C. Angus

2007 ◽  
pp. 92-93
Author(s):  
C. L Aardahl ◽  
J. W. Rogers

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