InGaN/AlGaN Double-Heterostructure Blue Leds

1994 ◽  
Vol 339 ◽  
Author(s):  
Shuji Nakamura
Keyword(s):  
Blue Light ◽  
Full Width ◽  
Half Maximum ◽  
Ingan Layer ◽  
Peak Wavelength ◽  
Forward Voltage ◽  
High Brightness ◽  
Light Emitting ◽  
Double Heterostructure ◽  
First Time

ABSTRACTHigh-brightness InGaN/AlGaN double-heterostructure (DH) blue-light-emitting diodes (LEDs) with a luminous intensity of 1.2 cd were fabricated successfully for the first time. As an active layer, a Zn-doped InGaN layer was used. The peak wavelength and the full width at half-maximum of the electroluminescence were 450 nm and 70 nm, respectively. The forward voltage was as low as 3.6V at 20 mA.

Partially pyridine-functionalized quantum dots for efficient red, green, and blue light-emitting diodes

2019 ◽  
Vol 7 (12) ◽  
pp. 3429-3435 ◽  
Author(s):  
Sukyung Choi ◽  
Jaehyun Moon ◽  
Hyunsu Cho ◽  
Byoung-Hwa Kwon ◽  
Nam Sung Cho ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting ◽  
Turn On ◽  
Colloidal Quantum Dot

Surface-exchanged, partially pyridine-functionalized colloidal quantum dot-based light-emitting diodes (QD-LEDs) exhibit a low turn-on voltage and high brightness.

Ultrabroad-band, red sufficient, solid white emission from carbon quantum dot aggregation for single component warm white light emitting diodes with a 91 high color rendering index

2019 ◽  
Vol 55 (46) ◽  
pp. 6531-6534 ◽  
Author(s):  
Ting Meng ◽  
Ting Yuan ◽  
Xiaohong Li ◽  
Yunchao Li ◽  
Louzhen Fan ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Full Width ◽  
Half Maximum ◽  
Light Emitting ◽  
White Emission ◽  
Carbon Quantum Dot ◽  
Warm White Light ◽  
Color Rendering Index ◽  
White Light Emitting Diodes ◽  
Color Rendering

An ultrabroad-band solid white emission from carbon quantum dot aggregation with a full width at half maximum over 200 nm throughout the entire visible light window and, even better, with a sufficient red component is first reported.

Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film

2009 ◽  
Vol 21 (27) ◽  
pp. 2767-2770 ◽  
Author(s):  
Xiao-Mei Zhang ◽  
Ming-Yen Lu ◽  
Yue Zhang ◽  
Lih-J. Chen ◽  
Zhong Lin Wang
Keyword(s):  
Thin Film ◽  
Blue Light ◽  
Light Emitting Diode ◽  
Nanowire Array ◽  
Zno Nanowire ◽  
High Brightness ◽  
Light Emitting

Theoretical and Experimental Studies on Microcavity Organic Light-Emitting Diodes with Different Emitters

2015 ◽  
Vol 645-646 ◽  
pp. 1087-1092 ◽  
Author(s):  
Cui Yun Peng ◽  
Meng Jie Wei ◽  
Rong Juan Huang ◽  
Kun Ping Guo ◽  
Yue Lin Jing ◽  
...  
Keyword(s):  
Emission Intensity ◽  
Light Emitting Diodes ◽  
Experimental Studies ◽  
Experimental Results ◽  
Organic Light Emitting Diodes ◽  
Full Width ◽  
Half Maximum ◽  
Light Emitting ◽  
Organic Light ◽  
Electroluminescence Intensity

We have theoretically and experimentally investigated the microcavity organic light-emitting diodes (MOLEDs) that enhanced the emission intensity and narrowed the spectra simultaneously. In this work, MOLEDs with the reflectivities of 70% and 90% have been successfully fabricated. Comparing to non-cavity OLEDs, the maximum forward electroluminescence intensity and the peak luminescence can be improved by 6.8 times and 2.2 times, respectively. The full width at half maximum could be sharply narrowed to 10 nm. The different configurations of MOLEDs with varied emitting layers have also been evaluated which fitted well with the experimental results.

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

1997 ◽  
Vol 468 ◽  
Author(s):  
K. Yang ◽  
H. T. Shi ◽  
B. Shen ◽  
R. Zhang ◽  
Z. Z. Chen ◽  
...  
Keyword(s):  
Blue Light ◽  
Carrier Transport ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Optical Emission ◽  
Emission Peak ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Current Voltage ◽  
Carrier Tunneling

ABSTRACTIn this paper, we studied the electrical and optical characteristics of Nichia double heterostructure blue light-emitting diodes, with In0.06Ga0.94N:Zn, Si active layer, at 77 and 300 K. Measurement of the forward bias current-voltage behavior of the device demonstrates a departure from the Shockley model of p-n diodes, and it is observed that the dominant mechanism of carrier transport across the junction is associated with carrier tunneling. Electroluminescence experiments of the devices were performed. We obtained an emission peak located at 2.80 eV, and a relatively weaker short-wavelength peak of 3.2 eV. A significant blue shifts of the optical emission peak which is consistent with the tunneling character of electrical characteristics was observed. Furthermore, we studied the properties of electroluminescence under various pulsed currents, and a degradation in I-V characteristics and a low resistance ohmic short were observed.

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