Straightforward electrical measurement of forward-voltage to investigate thermal effects in InGaN/GaN high-brightness light-emitting diodes

2014 ◽  
Vol 32 (6) ◽  
pp. 061209
Author(s):  
Bobby Logan Hancock ◽  
Mark Holtz
Keyword(s):  
Thermal Effects ◽  
Light Emitting Diodes ◽  
Electrical Measurement ◽  
Forward Voltage ◽  
High Brightness ◽  
Light Emitting

High-Brightness Blue-Green Light-Emitting Diodes on ZnSe Substrates

1995 ◽  
Vol 187 (2) ◽  
pp. 467-470 ◽  
Author(s):  
W. C. Harsch ◽  
G. Cantwell ◽  
J. F. Schetzina
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
High Brightness ◽  
Light Emitting

scholarly journals High-Brightness InGaN–GaN Flip-Chip Light-Emitting Diodes With Triple-Light Scattering Layers

2008 ◽  
Vol 20 (8) ◽  
pp. 659-661 ◽  
Author(s):  
Chia-En Lee ◽  
Yea-Chen Lee ◽  
Hao-Chung Kuo ◽  
Tien-Chang Lu ◽  
Shing-Chung Wang
Keyword(s):  
Light Scattering ◽  
Flip Chip ◽  
Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting

scholarly journals Temperature-Dependent Internal Quantum Efficiency of Blue High-Brightness Light-Emitting Diodes

2014 ◽  
Vol 50 (11) ◽  
pp. 911-920 ◽  
Author(s):  
Ilya E. Titkov ◽  
Sergey Yu. Karpov ◽  
Amit Yadav ◽  
Vera L. Zerova ◽  
Modestas Zulonas ◽  
...  
Keyword(s):  
Quantum Efficiency ◽  
Light Emitting Diodes ◽  
Internal Quantum Efficiency ◽  
Temperature Dependent ◽  
High Brightness ◽  
Light Emitting

Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

2004 ◽  
Vol 829 ◽  
Author(s):  
M. A. Awaah ◽  
R. Nana ◽  
K. Das
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Electrical Measurement ◽  
High Concentration ◽  
Recombination Lifetime ◽  
Light Emitting ◽  
Radiative Processes ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

High‐brightness InGaAlP green light‐emitting diodes

1992 ◽  
Vol 61 (15) ◽  
pp. 1775-1777 ◽  
Author(s):  
H. Sugawara ◽  
K. Itaya ◽  
H. Nozaki ◽  
G. Hatakoshi
Keyword(s):  
Light Emitting Diodes ◽  
Green Light ◽  
High Brightness ◽  
Light Emitting

scholarly journals High-performance large-area quasi-2D perovskite light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Changjiu Sun ◽  
Yuanzhi Jiang ◽  
Minghuan Cui ◽  
Lu Qiao ◽  
Junli Wei ◽  
...  
Keyword(s):  
High Performance ◽  
Light Emitting Diodes ◽  
Intermediate Phase ◽  
Formation Enthalpy ◽  
Phase Segregation ◽  
Phase Changes ◽  
Large Area ◽  
High Brightness ◽  
Light Emitting ◽  
Performance Decline

AbstractSerious performance decline arose for perovskite light-emitting diodes (PeLEDs) once the active area was enlarged. Here we investigate the failure mechanism of the widespread active film fabrication method; and ascribe severe phase-segregation to be the reason. We thereby introduce L-Norvaline to construct a COO−-coordinated intermediate phase with low formation enthalpy. The new intermediate phase changes the crystallization pathway, thereby suppressing the phase-segregation. Accordingly, high-quality large-area quasi-2D films with desirable properties are obtained. Based on this, we further rationally adjusted films’ recombination kinetics. We reported a series of highly-efficient green quasi-2D PeLEDs with active areas of 9.0 cm2. The peak EQE of 16.4% is achieved in <n > = 3, represent the most efficient large-area PeLEDs yet. Meanwhile, high brightness device with luminance up to 9.1 × 104 cd m−2 has achieved in <n> = 10 film.

High-brightness blue organic light emitting diodes with different types of guest-host systems

2016 ◽  
Vol 12 (2) ◽  
pp. 89-92 ◽  
Author(s):  
Xiao Wang ◽  
Jing-shuang Zhang ◽  
Cui-yun Peng ◽  
Kun-ping Guo ◽  
Bin Wei ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
High Brightness ◽  
Light Emitting ◽  
Organic Light ◽  
Different Types
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