Fabrication of a High-Brightness Blue-Light-Emitting Diode Using a ZnO-Nanowire Array Grown on p-GaN Thin Film

2009 ◽  
Vol 21 (27) ◽  
pp. 2767-2770 ◽  
Author(s):  
Xiao-Mei Zhang ◽  
Ming-Yen Lu ◽  
Yue Zhang ◽  
Lih-J. Chen ◽  
Zhong Lin Wang
2019 ◽  
Vol 27 (16) ◽  
pp. A1207 ◽  
Author(s):  
Mingming Su ◽  
Tanglei Zhang ◽  
Jun Su ◽  
Zhao Wang ◽  
Yongming Hu ◽  
...  

Author(s):  
C. Bayram ◽  
J. Kim ◽  
H. Park ◽  
C. W. Cheng ◽  
C. Dimitrakopoulos ◽  
...  

2009 ◽  
Vol 009 (1) ◽  
pp. 1-6
Author(s):  
Ying HE ◽  
Junan WANG ◽  
Xiaoban CHEN ◽  
Wenfei ZHANG ◽  
Xuyu ZENG ◽  
...  

2005 ◽  
Vol 44 (4B) ◽  
pp. 2506-2508 ◽  
Author(s):  
Jin-Woo Ju ◽  
Cheul-Ro Lee ◽  
Jong-Hyeob Baek ◽  
Young Hee Lee ◽  
In-Hwan Lee

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).


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