Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

Multilayer antidiffusion barrier schemes for Schottky and ohmic contact metallisations to InAlN/GaN HEMTs

2011 ◽  
Vol 1298 ◽  
Author(s):  
Eliana Kamińska ◽  
Iwona Pasternak ◽  
Michał A. Borysiewicz ◽  
Marek Guziewicz ◽  
Anna Piotrowska ◽  
...  
Keyword(s):  
Room Temperature ◽  
Depth Profiling ◽  
Metal Contacts ◽  
Cross Sectional ◽  
Transmission Line Method ◽  
Cross Sectional Imaging ◽  
Gan Hemts ◽  
Contact Resistivities ◽  
Secondary Ion ◽  
Thermal Stability Of

ABSTRACTThe reported work focuses on developing antidiffusion barriers capable to increase the thermal stability of metal contacts above 700 C. In the chosen approach, such an antidiffusion barrier consists of several bilayers of materials with different crystalline structures. It has been demonstrated that an interface between such materials effectively blocks the atomic interdiffusion. In this work the following groups of materials were used as the bilayers: ZrB2 and ZrN and TaSiN and TiN. The materials were deposited by means of room temperature sputtering from elemental and compound targets in inert Ar and reactive Ar+N2 atmospheres. The structures were characterised using secondary ion mass spectroscopy depth profiling and scanning electron microscopy cross sectional imaging directly after deposition and after degradation. I-V characteristics were measured and contact resistivities were determined from the circular transmission line method.

Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN

1999 ◽  
Vol 14 (3) ◽  
pp. 1032-1038 ◽  
Author(s):  
L. L. Smith ◽  
R. F. Davis ◽  
R-J. Liu ◽  
M. J. Kim ◽  
R. W. Carpenter
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Tem Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Specific Contact ◽  
Contact Resistivities ◽  
Thermal Stability Of

Single Ti layers, single TiN layers, and thin Ti films overlayered with Au were investigated as ohmic contacts to n-type (n 4.5 × 1017 to 7.4 × 1018 cm−3) single-crystal GaN (0001) films. Transmission line measurements (TLM) revealed the as-deposited TiN and Au/Ti contacts on n = 1.2 − 1018 cm−3 to be ohmic with room-temperature specific contact resistivities of 650 and 2.5 × 107minus;5 Ω cm2, respectively. Single Ti layer contacts had high resistance and were weakly rectifying in the as-deposited condition. The three contact/GaN systems exhibited a substantial decrease in resistivity after annealing; the value of ρc was also a function of the carrier concentration in the GaN. The Au/Ti contacts exhibited the lowest resistivity values yet observed in these contact studies, particularly for the more lightly doped n-GaN. The ρc for n = 1.2 × 1018 cm−3 reached 1.2 × 1026 Ω cm2; for n = 4.5 × 1017 cm−3, ρc = 7.5 × 1025 Ω cm2 after annealing both samples through 900 °C. X-ray photoelectron spectroscopy (XPS) and high-resolution cross-sectional transmission electron microscopy (X-TEM) analysis revealed the formation of TiN at the interface of annealed Ti layers in contact with GaN, which is believed to be beneficial for ohmic contact performance on n-GaN.

Thermal Breakdown Kinetics of 1-Ethyl-3-Methylimidazolium Ethylsulfate Measured Using Quantitative Infrared Spectroscopy

2017 ◽  
Vol 71 (12) ◽  
pp. 2626-2631 ◽  
Author(s):  
Jeffrey L. Wheeler ◽  
McKinley Pugh ◽  
S. Jake Atkins ◽  
Jason M. Porter
Keyword(s):  
Thermal Stability ◽  
Room Temperature ◽  
Computational Models ◽  
Elevated Temperatures ◽  
Molar Absorptivity ◽  
Ir Absorption ◽  
Optical Cell ◽  
Multiple Samples ◽  
Kinetics Of ◽  
Thermal Stability Of

In this work, the thermal stability of the room temperature ionic liquid (RTIL) 1-ethyl-3-methylimidazolium ethylsulfate ([EMIM][EtSO4]) is investigated using infrared (IR) spectroscopy. Quantitative IR absorption spectral data are measured for heated [EMIM][EtSO4]. Spectra have been collected between 25 ℃ and 100 ℃ using a heated optical cell. Multiple samples and cell pathlengths are used to determine quantitative values for the molar absorptivity of [EMIM][EtSO4]. These results are compared to previous computational models of the ion pair. These quantitative spectra are used to measure the rate of thermal decomposition of [EMIM][EtSO4] at elevated temperatures. The spectroscopic measurements of the rate of decomposition show that thermogravimetric methods overestimate the thermal stability of [EMIM][EtSO4].

Enhanced Thermal Stability of Esterified Lignin in Different Solvent Mediums

2018 ◽  
Vol 9 (1) ◽  
pp. 39-49 ◽  
Author(s):  
Sharifah Nurul Ain Syed Hashim ◽  
Sarani Zakaria ◽  
Chin Hua Chia ◽  
Sharifah Nabihah Syed Jaafar
Keyword(s):  
Thermal Stability ◽  
Alkaline Solution ◽  
Room Temperature ◽  
Hydroxyl Groups ◽  
Aqueous Alkaline Solution ◽  
Alkali Lignin ◽  
Weight Percentage ◽  
H Nmr ◽  
Ft Ir ◽  
Thermal Stability Of

In this study, soda alkali lignin from oil palm empty fruit bunch (EFB-AL) and kenaf core (KC-AL) are esterified with maleic anhydride under two different conditions, namely i) pyridine at temperature of 120°C for 3h and ii) aqueous alkaline solution at room temperature for 4h. As a result, the weight percentage gain (WPG) of the esterified EFB-AL (EFB-EL) and esterified KC-AL (KC-EL) in pyridine demonstrated a higher compared to aqueous alkaline solution. The FT-IR results of EFB-EL and KC-EL in both solvents exhibited some changes at the carbonyl and hydroxyl groups. Furthermore, the esterification process induced the carboxylic peak to appear in both alkali lignin samples. The outcome is confirmed by conducting H-NMR analysis, which demonstrated ester and carboxylic acid peaks within the spectral analysis. Finally, the TGA results showed both EFB-EL and KC-EL that are exposed to aqueous alkaline actually possessed better thermal stability and higher activation energy (Ea) compared to the esterified samples in pyridine.

STRUCTURE AND THERMAL STABILITY OF THE SULFIDE OVERLAYERS ON CH3CSNH2-PASSIVATED GaAs(100) SURFACES

2001 ◽  
Vol 08 (01n02) ◽  
pp. 19-23 ◽  
Author(s):  
F. Q. XU ◽  
E. D. LU ◽  
H. B. PAN ◽  
C. K. XIE ◽  
P. S. XU ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Electron Spectroscopy ◽  
Photoemission Spectroscopy ◽  
Low Energy Electron Diffraction ◽  
Native Oxides ◽  
Sulfur Passivation ◽  
Different Temperatures ◽  
Low Energy Electron ◽  
Synchrotron Radiation Photoemission ◽  
Thermal Stability Of

Chemically sulfur passivation of GaAs(100) by thioacetamide ( CH 3 CSNH 2) has been studied using synchrotron radiation photoemission spectroscopy (SRPES), Auger electron spectroscopy (AES) and low energy electron diffraction (LEED). The measurement of SRPES and AES showed that the top layer of native oxides over GaAs(100) was removed and the sulfides of Ga and As were formed after the passivation process. The thermal stability and surface structure have also been studied by annealing the passivated samples at different temperatures. We found that the surface sulfides could be removed gradually; as a result, a clean, ordered and thus Fermi level unpinning surface was finally achieved. The surface restructures with GaAs(100)–S(2×1) and 4×1 LEED patterns were observed on annealing above 260°C and at 550°C respectively.

Thermal stability of Ni/Ti/Al ohmic contacts to p-type 4H-SiC

2015 ◽  
Vol 117 (2) ◽  
pp. 025703 ◽  
Author(s):  
Hailong Yu ◽  
Xufang Zhang ◽  
Huajun Shen ◽  
Yidan Tang ◽  
Yun Bai ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Ohmic Contacts ◽  
P Type ◽  
Thermal Stability Of

scholarly journals Improved thermal stability of SiCf/SiC ceramic matrix composites fabricated by PIP process

2021 ◽  
Vol 15 (2) ◽  
pp. 164-169
Author(s):  
Jian Gu ◽  
Sea-Hoon Lee ◽  
Daejong Kim ◽  
Hee-Soo Lee ◽  
Jun-Seop Kim
Keyword(s):  
Thermal Stability ◽  
Ceramic Matrix Composites ◽  
Ceramic Matrix ◽  
Matrix Composites ◽  
Sic Fiber ◽  
Sic Ceramic ◽  
Different Temperatures ◽  
Pre Treatment ◽  
Thermal Deterioration ◽  
Thermal Stability Of

Improvement of the thermal stability of continuous SiC fiber reinforced SiC ceramic matrix composites (SiCf/SiC CMC) by the pre-treatment of SiC fillers and the suppression of oxidation during polymer impregnation and pyrolysis (PIP) process were investigated. Dense SiCf/SiC CMCs were fabricated using the slurry infiltration and PIP process under a purified argon atmosphere. Structure and mechanical properties of the SiCf/SiC CMC heated at different temperatures were evaluated. The flexural strength of the SiCf/SiC CMC decreased only 15.3%after heating at 1400 ?C, which exhibited a clear improvement compared with the literature data (49.5% loss), where severe thermal deterioration of SiCf/SiC composite occurred at high temperatures by the crystallization and decomposition of the precursor-derived ceramic matrix. The thermal stability of the SiCf/SiC CMC fabricated by PIP process was improved by the pre-treatment of SiC fillers for removing oxides and the strict atmosphere control to prevent oxidation.

Thermal Stability of Magnetic Properties in Dehydrogenated Triarylmethane Resins

1989 ◽  
Vol 173 ◽  
Author(s):  
Michiya Otani ◽  
Sugio Otani
Keyword(s):  
Thermal Stability ◽  
Magnetic Properties ◽  
Magnetic Property ◽  
Room Temperature ◽  
Permanent Magnets ◽  
Elevated Temperatures ◽  
Mechanical Response ◽  
The Stability ◽  
Thermal Stability Of

ABSTRACTThe stability of the magnetic properties of dehydrogenated triaryl-methane resins was investigated both at room temperature and at elevated temperatures. A magnetic property different from that reported in a previous paper was found in the course of studying the reproducibility of synthesis. This new property was examined through a mechanical response of the resins to a set of permanent magnets.

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