Multilayer antidiffusion barrier schemes for Schottky and ohmic contact metallisations to InAlN/GaN HEMTs

2011 ◽  
Vol 1298 ◽  
Author(s):  
Eliana Kamińska ◽  
Iwona Pasternak ◽  
Michał A. Borysiewicz ◽  
Marek Guziewicz ◽  
Anna Piotrowska ◽  
...  
Keyword(s):  
Room Temperature ◽  
Depth Profiling ◽  
Metal Contacts ◽  
Cross Sectional ◽  
Transmission Line Method ◽  
Cross Sectional Imaging ◽  
Gan Hemts ◽  
Contact Resistivities ◽  
Secondary Ion ◽  
Thermal Stability Of

ABSTRACTThe reported work focuses on developing antidiffusion barriers capable to increase the thermal stability of metal contacts above 700 C. In the chosen approach, such an antidiffusion barrier consists of several bilayers of materials with different crystalline structures. It has been demonstrated that an interface between such materials effectively blocks the atomic interdiffusion. In this work the following groups of materials were used as the bilayers: ZrB2 and ZrN and TaSiN and TiN. The materials were deposited by means of room temperature sputtering from elemental and compound targets in inert Ar and reactive Ar+N2 atmospheres. The structures were characterised using secondary ion mass spectroscopy depth profiling and scanning electron microscopy cross sectional imaging directly after deposition and after degradation. I-V characteristics were measured and contact resistivities were determined from the circular transmission line method.

Thermal Stability of Ti/Pt/Au Non-Alloyed Ohmic Contacts on InN

1994 ◽  
Vol 337 ◽  
Author(s):  
F. Ren ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
P. W. Wisk
Keyword(s):  
Thermal Stability ◽  
Doping Level ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Contact Resistivity ◽  
High Doping Level ◽  
Transmission Line Method ◽  
Different Temperatures ◽  
Contact Resistivities ◽  
Thermal Stability Of

ABSTRACTExtremely low contact resistance of non-alloyed Ti/Pt/Au metallization on n-type InN is demonstrated. The contacts were annealed at different temperatures up to 420 °C to investigate their thermal stability. A low contact resistivity of 1.8 x 10-7 ohm-cm2 was measured at room temperature using the transmission line method. This was due to the extremely high doping level (5 x 1020 cm-3) in the InN. After 300 °C annealing, the contact resistivity increased to 2.4 x 10-7 ohm-cm2- For 360 °C annealing, the contact morphology showed some degradation, but the contact resistivity was almost the same as at 300 °C. There was serious degradation of the contacts after 420 °C annealing. The morphology became very rough, and the contact and sheet resistances increased by factors of 3-5 times. This degradation is believed due to the decomposition of the InN film. The contact resistivities between n-type epitaxial GaAs and InN were also investigated, and showed values around 10-4 ohm-cm2.

Microstructure, electrical properties, and thermal stability of Ti-based ohmic contacts to n-GaN

1999 ◽  
Vol 14 (3) ◽  
pp. 1032-1038 ◽  
Author(s):  
L. L. Smith ◽  
R. F. Davis ◽  
R-J. Liu ◽  
M. J. Kim ◽  
R. W. Carpenter
Keyword(s):  
Photoelectron Spectroscopy ◽  
Room Temperature ◽  
Ohmic Contacts ◽  
Tem Analysis ◽  
Cross Sectional ◽  
X Ray ◽  
Transmission Electron ◽  
Specific Contact ◽  
Contact Resistivities ◽  
Thermal Stability Of

Single Ti layers, single TiN layers, and thin Ti films overlayered with Au were investigated as ohmic contacts to n-type (n 4.5 × 1017 to 7.4 × 1018 cm−3) single-crystal GaN (0001) films. Transmission line measurements (TLM) revealed the as-deposited TiN and Au/Ti contacts on n = 1.2 − 1018 cm−3 to be ohmic with room-temperature specific contact resistivities of 650 and 2.5 × 107minus;5 Ω cm2, respectively. Single Ti layer contacts had high resistance and were weakly rectifying in the as-deposited condition. The three contact/GaN systems exhibited a substantial decrease in resistivity after annealing; the value of ρc was also a function of the carrier concentration in the GaN. The Au/Ti contacts exhibited the lowest resistivity values yet observed in these contact studies, particularly for the more lightly doped n-GaN. The ρc for n = 1.2 × 1018 cm−3 reached 1.2 × 1026 Ω cm2; for n = 4.5 × 1017 cm−3, ρc = 7.5 × 1025 Ω cm2 after annealing both samples through 900 °C. X-ray photoelectron spectroscopy (XPS) and high-resolution cross-sectional transmission electron microscopy (X-TEM) analysis revealed the formation of TiN at the interface of annealed Ti layers in contact with GaN, which is believed to be beneficial for ohmic contact performance on n-GaN.

Epitaxy of Aluminium Films on Semiconductors by Ionized Cluster Beam

1984 ◽  
Vol 37 ◽  
Author(s):  
I. Yamada ◽  
C. J. Palmstrøm ◽  
E. Kennedy ◽  
J. W. Mayer ◽  
H. Inokawa ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Room Temperature ◽  
Depth Profiling ◽  
Electrical Characterization ◽  
Life Time ◽  
Cluster Beam ◽  
Clean Surface ◽  
Si Substrate ◽  
Thermal Stability Of

AbstractEpitaxial Al films have been deposited onto the clean surface of single-crystal Si by ionized cluster beam (ICB) at room temperature. Thermal stability of the film has been examined by SEM, AES depth profiling, ion backscat. tering/channeling, and electrical characterization of the Al-Si interface. It was found that the ICB Al film on Si substrate was remarkably stable up to 550°C although pure Al was used. Alloy penetration at the interface, shift of barrier height, degradation of crystalline quality and development of annealing hillocks on the surface were not observed after the heat treatment. Extremely long electromigration life time was also confirmed. Epitaxial growth on GaAs(100) substrate was attempted and preliminary results are given.

Enhanced Boron Diffusion in Amorphous Silicon

2004 ◽  
Vol 810 ◽  
Author(s):  
J.M. Jacques ◽  
N. Burbure ◽  
K.S. Jones ◽  
M.E. Law ◽  
L.S. Robertson ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Boron Diffusion ◽  
Cross Sectional ◽  
Enhanced Diffusion ◽  
Transmission Electron ◽  
Variable Angle Spectroscopic Ellipsometry ◽  
Secondary Ion

ABSTRACTIn prior works, we demonstrated the phenomenon of fluorine-enhanced boron diffusion within self-amorphized silicon. Present studies address the process dependencies of low temperature boron motion within ion implanted materials utilizing a germanium amorphization. Silicon wafers were preamorphized with either 60 keV or 80 keV Ge+ at a dose of 1×1015 atoms/cm2. Subsequent 500 eV, 1×1015 atoms/cm211B+ implants, as well as 6 keV F+ implants with doses ranging from 1×1014 atoms/cm2 to 5×1015 atoms/cm2 were also done. Furnace anneals were conducted at 550°C for 10 minutes under an inert N2 ambient. Secondary Ion Mass Spectroscopy (SIMS) was utilized to characterize the occurrence of boron diffusion within amorphous silicon at room temperature, as well as during the Solid Phase Epitaxial Regrowth (SPER) process. Amorphous layer depths were verified through Cross-Sectional Transmission Electron Microscopy (XTEM) and Variable Angle Spectroscopic Ellipsometry (VASE). Boron motion within as-implanted samples is observed at fluorine concentrations greater than 1×1020 atoms/cm3. The magnitude of the boron motion scales with increasing fluorine dose and concentration. During the initial stages of SPER, boron was observed to diffuse irrespective of the co-implanted fluorine dose. Fluorine enhanced diffusion at room temperature does not appear to follow the same process as the enhanced diffusion observed during the regrowth process.

Stabilizing effects of Ag doping on structure and thermal stability of FeN thin films

2021 ◽  
Author(s):  
Niti Niti ◽  
Yogesh Kumar ◽  
Seema Seema ◽  
V R Reddy ◽  
J. V. Vas ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Depth Profiling ◽  
Neutron Reflectivity ◽  
Ag Doping ◽  
Self Diffusion ◽  
Secondary Ion ◽  
Thermal Stability Of ◽  
Absorption Measurements ◽  
Appreciable Reduction

Abstract In this work, we investigated the effect of Ag doping (2-20 at.%) on the phase formation of iron mononitride (FeN) thin films. Together with deposition of FeN using reactive dc magnetron sputtering, Ag was also co-sputtered at various doping levels between 2-20 at.%. We found that doping of Ag around 5 at.% is optimum to not only improve the thermal stability of FeN but also to reduce intrinsic defects that are invariably present in (even in epitaxial) FeN. Conversion electron Mössbauer spectroscopy and N K-edge x-ray near edge absorption measurements clearly reveal a reduction of defects in Ag doped FeN samples. Moreover, Fe self-diffusion measurements carried out using secondary ion mass spectroscopy depth-profiling and polarized neutron reflectivity in 57Fe enriched samples exhibit an appreciable reduction in Fe self-diffusion in Ag doped FeN samples. Ag being immiscible with Fe and non-reactive with N, occupies grain-boundary positions as nanoparticles and prohibits the fast Fe self-diffusion in FeN.

Magnetic and Structural Properties of Mn-implanted Si

2004 ◽  
Vol 853 ◽  
Author(s):  
M. Bolduc ◽  
C. Awo-Affouda ◽  
A. Stollenwerk ◽  
M. B. Huang ◽  
F. Ramos ◽  
...  
Keyword(s):  
Structural Properties ◽  
Quantum Interference ◽  
Room Temperature ◽  
Depth Profiling ◽  
Superconducting Quantum Interference Device ◽  
Nanoscale Structures ◽  
Transmission Electron ◽  
Ferromagnetic Ordering ◽  
P Type ◽  
Secondary Ion

ABSTRACTP-type Si wafers (∼1019 cm−3) were implanted with 300 keV Mn+ ions at 350°C to a dose of 1×1016 cm−2, and then annealed at 800°C for 5 min. The magnetic properties with dependence upon temperature were measured by using a Superconducting Quantum Interference Device (SQUID) magnetometer. The Mn-implanted Si compound shows ferromagnetic ordering above room temperature. The saturation magnetization increases by ∼ 2 × after annealing and the Curie temperature is TC > 400 K. The structural properties have been investigated by means of Secondary Ion Mass Spectroscopy (SIMS) depth profiling and Transmission Electron Microscope (TEM) imaging. Measurements showed that the Mn atoms redistribute in the Si crystal due to the thermal annealing and form a band layer composed of nanoscale structures such as crystallites or defects.

TEM sample preparation of wear-tested room-temperature pulsed-laser-deposited thin films of MoS2 by ultramicrotomy

1993 ◽  
Vol 51 ◽  
pp. 1118-1119
Author(s):  
Pamela F. Lloyd ◽  
Scott D. Walck
Keyword(s):  
Thin Films ◽  
Sample Preparation ◽  
Room Temperature ◽  
High Vacuum ◽  
Pulsed Laser ◽  
Ultra High Vacuum ◽  
Wear Testing ◽  
Preparation Technique ◽  
Cross Sectional ◽  
Aerospace Applications

Pulsed laser deposition (PLD) is a novel technique for the deposition of tribological thin films. MoS2 is the archetypical solid lubricant material for aerospace applications. It provides a low coefficient of friction from cryogenic temperatures to about 350°C and can be used in ultra high vacuum environments. The TEM is ideally suited for studying the microstructural and tribo-chemical changes that occur during wear. The normal cross sectional TEM sample preparation method does not work well because the material’s lubricity causes the sandwich to separate. Walck et al. deposited MoS2 through a mesh mask which gave suitable results for as-deposited films, but the discontinuous nature of the film is unsuitable for wear-testing. To investigate wear-tested, room temperature (RT) PLD MoS2 films, the sample preparation technique of Heuer and Howitt was adapted.Two 300 run thick films were deposited on single crystal NaCl substrates. One was wear-tested on a ball-on-disk tribometer using a 30 gm load at 150 rpm for one minute, and subsequently coated with a heavy layer of evaporated gold.

State-of-the-art pulmonary arterial imaging – Part 2

VASA ◽  
2018 ◽  
Vol 47 (5) ◽  
pp. 361-375 ◽  
Author(s):  
Harold Goerne ◽  
Abhishek Chaturvedi ◽  
Sasan Partovi ◽  
Prabhakar Rajiah
Keyword(s):  
Pulmonary Artery ◽  
State Of The Art ◽  
Therapy Monitoring ◽  
Pulmonary Arteries ◽  
Imaging Modalities ◽  
Cross Sectional ◽  
Multiple Imaging ◽  
Cross Sectional Imaging ◽  
Pulmonary Arterial ◽  
Arterial Imaging

Abstract. Although pulmonary embolism is the most common abnormality of the pulmonary artery, there is a broad spectrum of other congenital and acquired pulmonary arterial abnormalities. Multiple imaging modalities are now available to evaluate these abnormalities of the pulmonary arteries. CT and MRI are the most commonly used cross-sectional imaging modalities that provide comprehensive information on several aspects of these abnormalities, including morphology, function, risk-stratification and therapy-monitoring. In this article, we review the role of state-of-the-art pulmonary arterial imaging in the evaluation of non-thromboembolic disorders of pulmonary artery.

State-of-the-art aortic imaging: Part II - applications in transcatheter aortic valve replacement and endovascular aortic aneurysm repair

VASA ◽  
2014 ◽  
Vol 43 (1) ◽  
pp. 6-26 ◽  
Author(s):  
Fabian Rengier ◽  
Philipp Geisbüsch ◽  
Paul Schoenhagen ◽  
Matthias Müller-Eschner ◽  
Rolf Vosshenrich ◽  
...  
Keyword(s):  
Aortic Valve ◽  
Transcatheter Aortic Valve Replacement ◽  
Surgical Repair ◽  
Imaging Modality ◽  
Open Surgical Repair ◽  
Cross Sectional ◽  
Transcatheter Aortic Valve ◽  
Cross Sectional Imaging ◽  
Sectional Imaging

Transcatheter aortic valve replacement (TAVR) as well as thoracic and abdominal endovascular aortic repair (TEVAR and EVAR) rely on accurate pre- and postprocedural imaging. This review article discusses the application of imaging, including preprocedural assessment and measurements as well as postprocedural imaging of complications. Furthermore, the exciting perspective of computational fluid dynamics (CFD) based on cross-sectional imaging is presented. TAVR is a minimally invasive alternative for treatment of aortic valve stenosis in patients with high age and multiple comorbidities who cannot undergo traditional open surgical repair. Given the lack of direct visualization during the procedure, pre- and peri-procedural imaging forms an essential part of the intervention. Computed tomography angiography (CTA) is the imaging modality of choice for preprocedural planning. Routine postprocedural follow-up is performed by echocardiography to confirm treatment success and detect complications. EVAR and TEVAR are minimally invasive alternatives to open surgical repair of aortic pathologies. CTA constitutes the preferred imaging modality for both preoperative planning and postoperative follow-up including detection of endoleaks. Magnetic resonance imaging is an excellent alternative to CT for postoperative follow-up, and is especially beneficial for younger patients given the lack of radiation. Ultrasound is applied in screening and postoperative follow-up of abdominal aortic aneurysms, but cross-sectional imaging is required once abnormalities are detected. Contrast-enhanced ultrasound may be as sensitive as CTA in detecting endoleaks.

The Effects of Nitrogen on Electrical and Structural Properties in TaSixNy/SiO2/p-Si MOS Capacitors

2002 ◽  
Vol 716 ◽  
Author(s):  
You-Seok Suh ◽  
Greg Heuss ◽  
Jae-Hoon Lee ◽  
Veena Misra
Keyword(s):  
Structural Properties ◽  
Electron Spectroscopy ◽  
Oxygen Diffusion ◽  
Gate Dielectric ◽  
Barrier Properties ◽  
Reaction Rates ◽  
Cross Sectional ◽  
Mos Capacitors ◽  
Transmission Electron ◽  
Thermal Stability Of

AbstractIn this work, we report the effects of nitrogen on electrical and structural properties in TaSixNy /SiO2/p-Si MOS capacitors. TaSixNy films with various compositions were deposited by reactive sputtering of TaSi2 or by co-sputtering of Ta and Si targets in argon and nitrogen ambient. TaSixNy films were characterized by Rutherford backscattering spectroscopy and Auger electron spectroscopy. It was found that the workfunction of TaSixNy (Si>Ta) with varying N contents ranges from 4.2 to 4.3 eV. Cross-sectional transmission electron microscopy shows no indication of interfacial reaction or crystallization in TaSixNy on SiO2, resulting in no significant increase of leakage current in the capacitor during annealing. It is believed that nitrogen retards reaction rates and improves the chemical-thermal stability of the gate-dielectric interface and oxygen diffusion barrier properties.

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