W/Pt and Ti/Pt Based Contacts to Algaas/Gaas Heterojunction Bipolar Transistors

1994 ◽  
Vol 337 ◽  
Author(s):  
T.S. Kalkur ◽  
P.D. Wright
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Temperature Range

ABSTRACTTi/Pt and W/pt was used form contacts on hevily doped InAs and InGaAs emitter layers of heterojunction Bipolar transistors (HBTs) . The as deposited contacts were ohmic for Ti/Pt on InAs and W/Pt on InGaAs. The rapid thermal annealing was performed in the temperature range of 300-600 C. The contact characteristics of Ti/Pt and W/Pt were compared with Au/Cr contacts.

Rapid thermal annealing of metastable and stable Si/Si1−xGex heterojunction bipolar transistors

1991 ◽  
Vol 15 (1-4) ◽  
pp. 135-138 ◽  
Author(s):  
Z.A. Shafi ◽  
A.S.R. Martin ◽  
J. Whitehurst ◽  
P. Ashburn ◽  
D.J. Godfrey ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors

The Use of Low Temperature AlInAs and GalnAs Lattice Matched to InP in the Fabrication of HBTs and HEMTs

1991 ◽  
Vol 241 ◽  
Author(s):  
R. A. Metzger ◽  
A. S. Brown ◽  
R. G. Wilson ◽  
T. Liu ◽  
W. E. Stanchina ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Normal Growth ◽  
High Electron Mobility Transistors ◽  
Bipolar Transistors ◽  
Device Performance ◽  
High Electron ◽  
High Electron Mobility ◽  
Temperature Range ◽  
Electron Mobility Transistors ◽  
Lattice Matched

ABSTRACTAlInAs and GaInAs lattice matched to InP and grown by MBE over a temperature range of 200 to 350°C (normal growth temperature of 500°C) has been used to enhance the device performance of inverted (where the donor layer lies below the channel) High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs), respectively. We will show that an AlInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs donor layer and GaInAs channel significantly reduces Si movement from the donor layer into the channel. This produces an inverted HEMT with a channel charge of 3.0×1012 cm−2 and mobility of 9131 cm2/V-s, as compared to the same HEMT with a spacer grown at 500 °C resulting in a channel charge of 2.3×1012 cm−2 and mobility of 4655 cm2/V-s. We will also show that a GaInAs spacer grown over a temperature range of 300 to 350°C and inserted between the AlInAs emitter and GalnAs base of an npn HBT significantly reduces Be movement from the base into the emitter, thereby allowing higher Be base dopings (up to 1×1020 cm−3) confined to 500 Å base widths, resulting in an AlInAs/GaInAs HBT with an fmax of 73 GHz and ft of 110 GHz.

Rapid Thermal Annealing of InP Implanted with Group IV Eleients

1993 ◽  
Vol 300 ◽  
Author(s):  
M.C. Ridgway ◽  
P Kringhoj
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Carrier Mobility ◽  
Annealing Temperature ◽  
Group Iv ◽  
Electrical Activation ◽  
Temperature Range ◽  
Group Iv Elements

ABSTRACTElectrical activation and carrier mobility have been studied as a function of ion dose and annealing temperature for InP implanted with Group IV elements (Si, Ge and Sn). In general, electrical activation increases with decreasing ion dose and/or increasing annealing temperature. Si and Sn exhibit comparable activation and mobility, superior to that of Ge, over the ion dose and temperature range examined. The relative influences of implantation-induced non-stoichiometry and the amphoteric behaviour of the group IV elements have been investigated. For the latter, the amphoteric behavior of Ge > Si > Sn.

“On the Growth - and Annealing - Temperature Dependence of the Electrical Properties of Ga0.51In0.49P/GaAs Heterostructures Grown by Mombe”

1992 ◽  
Vol 281 ◽  
Author(s):  
E. C. Paloura ◽  
A. Ginoudi ◽  
N. Frangis ◽  
A. Christou
Keyword(s):  
Electrical Properties ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Schottky Diodes ◽  
Tem Analysis ◽  
Temperature Range ◽  
Best Value ◽  
Deep Electron Trap ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Free Films

ABSTRACTWe study the effect of growth temperature (TG) and post-growth rapid thermal annealing (RTA) on the electrical properties of Schottky diodes fabricated on undoped, lattice-matched Ga0.51In0.49P/GaAs heterostructures. The samples were grown by metalorganic molecular beam epitaxy (MOMBE) in the temperature range 480 – 560°C. Ga0.51In0.49P grown in this temperature range undergoes spinodal decomposition, as shown by cross-section TEM analysis. The dislocation-free epilayers grown at TG≤520°C are characterized by a deep electron trap with an activation energy of 800meV while growth at higher temperatures renders trap-free films. Furthermore, the Schottky barrier ideality factor (n) depends strongly on TG and takes the best value of 1.4 for TG=540°C, while the barrier height remains nearly constant at about 0.75eV. Finally, upon capped rapid thermal annealing the value of n improves while the trap concentration decreases significantly. Based on the presented experimental evidence we can propose that MOMBE growth at 540°C renders films with improved electrical properties.

Ti/Pt Based Contacts to Heterojunction Bipolar Transistors

1992 ◽  
Vol 260 ◽  
Author(s):  
T. S. Kalkur ◽  
P. D. Wright ◽  
S. K. Ko ◽  
Y. C. Lu ◽  
L. Casas ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Heterojunction Bipolar Transistors ◽  
Thermal Processing ◽  
Rapid Thermal Processing ◽  
Bipolar Transistors ◽  
Emitter Layer ◽  
Temperature Range ◽  
Contact Resistivities

ABSTRACTTi/Pt metallization was used to form contacts on both n+-InAs emitter cap and p+ base layers of heterojunction bipolar transistors (HBTs). The as-deposited contacts were found to be ohmic for both the base and emitter cap layers. Rapid thermal processing of the contact metallizations was performed in the temperature range of 3 00–500 C for 30 seconds. Minimum contact resistivities of l×10-6 ohm-cm2 for the base and 3×l0-7 ohm-cm2 for the emitter layer were achieved. The influence of heat treatment on contact morphology was also examined.

The effects of scaling and rapid thermal annealing on the 1/∫ noise of polysilicon emitter bipolar transistors

1991 ◽  
Vol 15 (1-4) ◽  
pp. 533-536 ◽  
Author(s):  
N. Siabi-Shahrivar ◽  
H.A. Kemhadjian ◽  
W. Redman-White ◽  
P. Ashburn ◽  
J.D. Williams
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Bipolar Transistors ◽  
Polysilicon Emitter
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