Dependence of burn-in effect on thermal annealing of the GaAs:C base layer in GaInP heterojunction bipolar transistors

2003 ◽  
Vol 82 (17) ◽  
pp. 2910-2912 ◽  
Author(s):  
J. Mimila-Arroyo ◽  
V. Cabrera ◽  
S. W. Bland
Keyword(s):  
Thermal Annealing ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Layer

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

Tri-Layer Lift-off Metallization Process Using Low Temperature Deposited SiNx

1992 ◽  
Vol 282 ◽  
Author(s):  
J. R. Lothian ◽  
F. Ren ◽  
S. J. Pearton ◽  
U. K. Chakrabarti ◽  
C. R. Abernathy ◽  
...  
Keyword(s):  
Low Temperature ◽  
Heterojunction Bipolar Transistors ◽  
Electron Cyclotron Resonance ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Lithographic Patterning ◽  
Final Stress ◽  
Lift Off ◽  
High Yields ◽  
Metallization Process

ABSTRACTA tri-level resist scheme using low temperature (<50°C) deposited SiNx ratfier than Ge for the transfer layer has been developed. This allows use of an optical stepper for lithographic patterning of the emitter-base junctions in GaAs/AlGaAs heterojunction bipolar transistors (HBTs) where a conventional lift-off process using a single level resist often leads to die presence of shorts between metallizations. The plasma-enhanced chemically vapor deposited (PECVD) SiNx shows a sligtly larger degree of Si-H bonding compared to nitride deposited at higher temperature (275°C), and is under compressive stress (-5 × 1010 dyne · cm−2) which is considerably relieved upor thermal cycling to 500°C (-1.5 × 1010 dyne · cm−2 after cool-down). This final stress is approximately a factor of two higher man conventional PECVD SiNx cycled in the same manner. The adhesion of the low temperature nitride to die underlying polydimediylglutarimide (PMGI) base layer in the tri-level resist is excellent, leading to high yields in the lift-off metallization process. These layers are etched in Electron Cyclotron Resonance (ECR) discharges of SF6 or O2, respectively, using low additional dc bias (≤-100V) on the sample. Subsequent deposition of the HBT base metallization (Ti/Ag/Au) and lift-off of the tri-level resist produces contacts with excellent edge definition and an absence of shorts between metallization.

High-Power Characteristics of GaN/InGaN Double Heterojunction Bipolar Transistors with a Regrown p-InGaN Base Layer

2003 ◽  
Vol 798 ◽  
Author(s):  
Toshiki Makimoto ◽  
Yoshiharu Yamauchi ◽  
Kazuhide Kumakura
Keyword(s):  
High Power ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Collector Current ◽  
Power Characteristics ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Double Heterojunction ◽  
Extrinsic Base

ABSTRACTWe have investigated high-power characteristics of GaN/InGaN double heterojunction bipolar transistors on SiC substrates grown by metalorganic vapor phase epitaxy. The p-InGaN extrinsic base layers were regrown to improve ohmic characteristics of the base. Base-collector diodes showed low leakage current at their reverse bias voltages due to a wide bandgap of a GaN collector, resulting in a high-voltage transistor operation. A 90 μm × 50 μm device operated up to a collector-emitter voltage of 28 V and a collector current of 0.37 A in its common-emitter current-voltage characteristics at room temperature, which corresponds to a DC power of 10.4 W. A collector current density and a power density are as high as 8.2 kA/cm2 and 230 kW/cm2, respectively. These results show that nitride HBTs are promising for high-power electronic devices.

Hydrogen in carbon-doped GaAs base layer of GaInP/GaAs heterojunction bipolar transistors

1997 ◽  
Vol 44 (1-3) ◽  
pp. 337-340 ◽  
Author(s):  
E. Richter ◽  
P. Kurpas ◽  
M. Sato ◽  
M. Trapp ◽  
U. Zeimer ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Carbon Doped

EXPERIMENTAL CHARACTERIZATION AND MODELING ANALYSIS ON NPN AlGaN/GaN HBT WITH HIGH IDEALITY FACTOR IN BOTH COLLECTOR AND BASE CURRENT

2012 ◽  
Vol 19 (04) ◽  
pp. 1250043
Author(s):  
SHIH-WEI TAN ◽  
SHIH-WEN LAI
Keyword(s):  
Schottky Diode ◽  
Heterojunction Bipolar Transistors ◽  
Ideality Factor ◽  
Equivalent Circuit Model ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Collector Current ◽  
Base Current ◽  
Modeling Analysis ◽  
Good Agreement

Characterization and modeling analysis on both ideality factor of the collector current (η C ) and the base current (η B ) have higher than the excepted values of 1.0 and 2.0, respectively, for npn Al GaN/GaN heterojunction bipolar transistors (HBTs) have been reported. We employ the rapid thermal process annealing (RTP-annealing) to modify the base parasitical Schottky diode (called A-HBTs) after the as-deposited Ni/Au bilayers on the base layer for electrode with no annealing (called N-HBTs) to compare with each other. For a HBT operated in Gummel-plot configuration, experimental and modeling results indicate that the base parasitical Schottky diode (BPSD) causes the base current (I B ) and collector current (I C ) with high ideality factor and raise the base-emitter voltage (V BE ) to higher operation point, and therefore lead to more power consumption. Furthermore, the extended Ebers–Moll equivalent-circuit model together with the extracted device parameters provided simulated results that were in a good agreement with experimental ones.

CANTILEVERED BASE InP DHBT FOR HIGH SPEED DIGITAL APPLICATIONS

2001 ◽  
Vol 11 (01) ◽  
pp. 245-256 ◽  
Author(s):  
AUGUSTO L. GUTIERREZ-AITKEN ◽  
ERIC N. KANESHIRO ◽  
JAMES H. MATSUI ◽  
DONALD J. SAWDAI ◽  
JOHANNES K. NOTTHOFF ◽  
...  
Keyword(s):  
Optical Communication ◽  
Heterojunction Bipolar Transistors ◽  
High Speed ◽  
Frequency Synthesizers ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Digital Conversion ◽  
Direct Digital Synthesizer ◽  
Communication Frequency ◽  
5 Ghz

High speed digital logic is essential in diverse applications such as optical communication, frequency synthesizers, and analog-digital conversion. Current research efforts indicate that technologies utilizing heterojunction bipolar transistors (HBT) are the preferred approach for systems operating at clock frequencies of 40 GHz and above (1-6). In this paper we report a novel InAIAs/InGaAs/InP double-HBT (DHBT) with a cantilevered base layer and undercut collector. We fabricated and demonstrated an 80 GHz 2:1 digital frequency divider, and a 5 GHz 8-bit phase/7-bit magnitude Direct Digital Synthesizer (DDS) chip with approximately 3000 transistors using this technology.

W/Pt and Ti/Pt Based Contacts to Algaas/Gaas Heterojunction Bipolar Transistors

1994 ◽  
Vol 337 ◽  
Author(s):  
T.S. Kalkur ◽  
P.D. Wright
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Temperature Range

ABSTRACTTi/Pt and W/pt was used form contacts on hevily doped InAs and InGaAs emitter layers of heterojunction Bipolar transistors (HBTs) . The as deposited contacts were ohmic for Ti/Pt on InAs and W/Pt on InGaAs. The rapid thermal annealing was performed in the temperature range of 300-600 C. The contact characteristics of Ti/Pt and W/Pt were compared with Au/Cr contacts.

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