Ohmic Contact Metallization for n-Type GaAs

1994 ◽  
Vol 337 ◽  
Author(s):  
M. Murakami ◽  
T. Oku ◽  
A. Otsuki ◽  
C. J. Uchibori
Keyword(s):  
Ohmic Contact ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Materials Development ◽  
Excellent Thermal Stability ◽  
Contact Materials ◽  
Contact Metallization ◽  
Gaas Devices ◽  
Large Scale Integration ◽  
Scale Integration

ABSTRACTThe performance of GaAs devices is significantly influenced by the qualities of the substrates, Schottky and Ohmic contact materials. Development of Ohmic contact materials is far behind compared with that of the other materials. Low resistance, alloyed AuGeNi Ohmic contacts have been extensively used in the current manufacturing GaAs devices. However, extension of usage of these devices to Very Large Scale Integration levels requires the contacts with excellent thermal stability, shallow diffusion depth, and smooth contact surface in addition to low contact resistance. In the present paper recent studies for development of Ohmic contacts which improve the poor contact properties of the alloyed Ohmic contacts are reviewed.

Recent Progress of Alloyed Ohmic Contacts to GaAs Compound Semiconductors

1992 ◽  
Vol 260 ◽  
Author(s):  
Masanori Murakami ◽  
A. Otsuki ◽  
K. Tanahashi ◽  
H. J. Tarata ◽  
A. Callegari ◽  
...  
Keyword(s):  
Large Scale ◽  
Ohmic Contacts ◽  
Recent Progress ◽  
Excellent Thermal Stability ◽  
The Poor ◽  
Gaas Devices ◽  
Large Scale Integration ◽  
Smooth Contact ◽  
Scale Integration ◽  
Integration Levels

ABSTRACTLow resistance, alloyed AuGeNi Ohmic contacts have been extensively used in the current manufacturing GaAs devices. However, extension of usage of these devices to Very Large Scale Integration levels requires the contacts with excellent thermal stability, shallow diffusion depth, and smooth contact surface in addition to low contact resistance. In the present paper recent studies for development of “non-gold” Ohmic contacts which improve the poor contact properties of the alloyed Ohmic contacts are rev i ewed.

Inlaid Copper Multilevel Interconnections Using Planarization by Chemical-Mechanical Polishing

MRS Bulletin ◽  
1993 ◽  
Vol 18 (6) ◽  
pp. 46-51 ◽  
Author(s):  
S.P. Murarka ◽  
J. Steigerwald ◽  
R.J. Gutmann
Keyword(s):  
Integrated Circuits ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Access Time ◽  
Gigascale Integration ◽  
Interlayer Dielectric ◽  
Application Specific Integrated Circuits ◽  
Large Scale Integration ◽  
Scale Integration ◽  
Application Specific

Continuing advances in the fields of very-large-scale integration (VLSI), ultralarge-scale integration (ULSI), and gigascale integration (GSI), leading to the continuing development of smaller and smaller devices, have continually challenged the fields of materials, processes, and circuit designs. The existing metallization schemes for ohmic contacts, gate metal, and interconnections are inadequate for the ULSI and GSI era. An added concern is the reliability of aluminum and its alloys as the current carrier. Also, the higher resistivity of Al and its use in two-dimensional networks have been considered inadequate, since they lead to unacceptably high values of the so-called interconnection delay or RC delay, especially in microprocessors and application-specific integrated circuits (ICs). Here, R refers to the resistance of the interconnection and C to the total capacitance associated with the interlayer dielectric. For the fastest devices currently available and faster ones of the future, the RC delay must be reduced to such a level that the contribution of RC to switching delays (access time) becomes a small fraction of the total, which is a sum of the inherent device delay associated with the semiconductor, the device geometry and type, and the RC delay.

Contact Resistance and Methods for its Determination

1982 ◽  
Vol 18 ◽  
Author(s):  
S. Simon Cohen
Keyword(s):  
Integrated Circuits ◽  
Contact Resistance ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Vlsi Circuits ◽  
Single Element ◽  
Large Scale Integration ◽  
Proper Definition ◽  
Definition Of ◽  
Scale Integration

The problem of low resistance ohmic contacts to silicon has been of considerable technological interest. In recent years this problem has received special attention owing to the effect of scaling in very-large-scale integration (VLSI) technology. The field of ohmic contacts to semiconductors comprises two independent parts. First there exists the material science aspect. The choice of a suitable metallization system, the proper semiconductor parameters and the method of the contact formation is not obvious. Then there is the question of the proper definition of the contact resistance and the way it is measured.Several methods for contact resistance determination have been introduced in the past. All seem to have some drawbacks that either limit their usefulness or raise doubts as to their validity in certain situations. We shall discuss the two-, three- and four-terminal resistor methods of measurement. Relevant theoretical considerations will also be included.For conventional integrated circuits with a moderate junction depth of 1–2 μm, aluminum is uniquely suited as a single-element metallization system. However, for VLSI applications it may become obsolete because of several well-defined metallurgical problems. Thus, other metallization systems have to be investigated. We shall briefly discuss some recent data on several other metallization systems. Finally, the problem of size effects on the contact resistance will be discussed. Recent experimental results suggest important clues regarding the development of alternative metallization systems for VLSI circuits and also point to revisions of estimates of achievable design rules.

Plant hormones, plant growth regulators

2014 ◽  
Vol 155 (26) ◽  
pp. 1011-1018 ◽  
Author(s):  
György Végvári ◽  
Edina Vidéki
Keyword(s):  
Nervous System ◽  
Growth And Development ◽  
Large Scale ◽  
Essential Role ◽  
Higher Plants ◽  
Structure And Function ◽  
Wide Sense ◽  
Large Scale Integration ◽  
Scale Integration ◽  
And Function

Plants seem to be rather defenceless, they are unable to do motion, have no nervous system or immune system unlike animals. Besides this, plants do have hormones, though these substances are produced not in glands. In view of their complexity they lagged behind animals, however, plant organisms show large scale integration in their structure and function. In higher plants, such as in animals, the intercellular communication is fulfilled through chemical messengers. These specific compounds in plants are called phytohormones, or in a wide sense, bioregulators. Even a small quantity of these endogenous organic compounds are able to regulate the operation, growth and development of higher plants, and keep the connection between cells, tissues and synergy beween organs. Since they do not have nervous and immume systems, phytohormones play essential role in plants’ life. Orv. Hetil., 2014, 155(26), 1011–1018.

Behavior Models of Voltage Differencing Inverting Buffered Amplifier and Applications in Circuit Analysis

2019 ◽  
Vol 12 (4) ◽  
pp. 298-303
Author(s):  
YongAn LI
Keyword(s):  
Large Scale ◽  
Vlsi Design ◽  
Circuit Analysis ◽  
Second Order ◽  
Very Large Scale Integration ◽  
Behavioral Models ◽  
Order Filter ◽  
Large Scale Integration ◽  
Scale Integration ◽  
Behavior Models

Background: The symbolic nodal analysis acts as a pivotal part of the very large scale integration (VLSI) design. Methods: In this work, based on the terminal relations for the pathological elements and the voltage differencing inverting buffered amplifier (VDIBA), twelve alternative pathological models for the VDIBA are presented. Moreover, the proposed models are applied to the VDIBA-based second-order filter and oscillator so as to simplify the circuit analysis. Results: The result shows that the behavioral models for the VDIBA are systematic, effective and powerful in the symbolic nodal circuit analysis.</P>

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