Influence of Substrate Temperature on the Properties of A-Si:H P-Layers Obtained from Trimethylboron

1994 ◽  
Vol 336 ◽  
Author(s):  
J. Puigdollers ◽  
J.M. Asensi ◽  
J. Bertomeu ◽  
J. Andreu ◽  
J.C. Delgado
Keyword(s):  
Substrate Temperature ◽  
Optical Transmission ◽  
Boron Content ◽  
Secondary Ion Mass Spectrometry ◽  
Dark Conductivity ◽  
Film Properties ◽  
Atom Concentration ◽  
Influence Of Substrate ◽  
Secondary Ion ◽  
Marked Dependence

ABSTRACTa-Si:H p-layers doped by trimethylboron (TMB) were obtained by PECVD in a monochamber reactor with a rotating substrate holder. The influence of the substrate temperature (Ts) on the film properties was systematically studied for two different doping gas concentrations. The incorporation of boron, hydrogen and carbon was studied by Secondary Ion Mass Spectrometry (SIMS). Optical properties were determined by means of Photothermal Deplection Spectroscopy (PDS) and optical transmission. Dark conductivity (aj and activation energy (Eact) were measured electrically. Our results show that Σd has a marked dependence on substrate temperature, although boron atom concentration depends only slightly on Ts. The optical gap for samples obtained at the higher concentration also depends on Ts and its dependence is related to the hydrogen content, as boron content does not change. P-i-n diodes were obtained with the p-layer deposited from TMB.

Optical and Electronic Characterization of a-SiGe:H Thin Films Prepared by a Novel Hollow Cathode Deposition Technique

2004 ◽  
Vol 808 ◽  
Author(s):  
R. J. Soukup ◽  
N. J. Ianno ◽  
Scott A. Darveau ◽  
Christopher L. Exstrom
Keyword(s):  
Thin Films ◽  
Hollow Cathode ◽  
Secondary Ion Mass Spectrometry ◽  
Dark Conductivity ◽  
Cathode Plasma ◽  
Glass Substrates ◽  
Elemental Analyses ◽  
Silicon And Germanium ◽  
Secondary Ion

ABSTRACTUsing a novel hollow cathode plasma-jet reactive sputtering system in which an intense plasma, ignited in an Ar/H2 flow, is directed through silicon and germanium nozzles, a series of a-SiGe:H thin films have been prepared on silicon and glass substrates. These films have been optically characterized by infrared (IR) spectroscopy and spectroscopic ellipsometry (335-1000nm). Total hydrogen concentrations, as determined by FTIR, varied with deposition conditions and ranged from 2.5 × 1021 to 1.6 × 1022 atom cm−3 and correlated with secondary ion mass spectrometry (SIMS) elemental analyses to within 10%. Conductivity measurements in the dark and under simulated AM1 solar illumination have indicated that the films properties are very good. The light to dark conductivity ratio has consistently been greater than 1000 for films with band gaps down to 1.3 eV.

Influence of Substrate Temperature on Structure and Optical Property of Cu3N Thin Films

2010 ◽  
Vol 152-153 ◽  
pp. 218-221
Author(s):  
Jian Rong Xiao ◽  
Ai Hua Jiang ◽  
Ye Guang Liang
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Optical Transmission ◽  
X Ray Diffraction ◽  
Compact Structure ◽  
Copper Nitride ◽  
X Ray ◽  
Atomic Force ◽  
Influence Of Substrate ◽  
Substrate Temperatures

Copper nitride thin films were prepared by reactive radio frequency magnetron sputtering at various substrate temperatures. The surface morphology and crystal structure of the thin films were characterized by atomic force microscope (AFM) and X-ray diffraction (XRD), respectively. The AFM images demonstrate that the films have a compact structure. The XRD test indicates that growth orientation of the thin films prefers the (111) or (100) at different substrate temperature. The optical transmission properties of the thin films were obtained by an ultraviolet visible spectrometer. The optical band gap of the thin films decreases with increasing substrate temperature.

Study of Oxidation Properties of Amorphous Si:B Films

1991 ◽  
Vol 219 ◽  
Author(s):  
G.-R. Yang ◽  
T. C. Nason ◽  
Y.-J. Wu ◽  
B. Y. Tong ◽  
S. K. Wong
Keyword(s):  
Thermal Oxidation ◽  
Boron Content ◽  
Boron Concentration ◽  
Secondary Ion Mass Spectrometry ◽  
Chemical Vapor ◽  
Spectroscopic Properties ◽  
Threshold Temperature ◽  
Oxide Layers ◽  
Pressure Chemical ◽  
Secondary Ion

ABSTRACTThin films of an amorphous silicon-boron alloy with boron content 1–50 at.% have been deposited by low pressure chemical vapor deposition (LPCVD). The boron content and film thickness of the samples were controlled by regulating the ratio of diborane and silane gases during the deposition. It was observed that the crystallization of the amorphous alloy took place at higher temperatures as boron concentration was increased. After a thermal oxidation was performed, the stoichiometry of die resulting oxide layers on various samples was determined by the secondary ion mass spectrometry and Auger depth profile methods. While the threshold temperature for thermal oxidation was determined to be inversely proportional to the boron concentration, the oxidation rate showed a dramatic increase with boron content. In particular, an alloy containing 30% boron was readily oxidized at 500°C. Mechanisms for the enhancement of oxidation consistent with stoichiometric and spectroscopic properties of the oxide layers are discussed.

A Multiple Quantum NMR (MQNMR) Study of Hydrogen Microstructure in Boron Doped a-Si:H

1992 ◽  
Vol 258 ◽  
Author(s):  
S. Mitra ◽  
D. H. Levy ◽  
K. K. Gleason ◽  
H. Jia ◽  
J. Shinar
Keyword(s):  
Boron Content ◽  
Secondary Ion Mass Spectrometry ◽  
Multiple Quantum ◽  
Moderate Increase ◽  
Preparation Time ◽  
Boron Doped ◽  
Three Samples ◽  
Secondary Ion ◽  
Weakly Dependent ◽  
Multiple Quantum Nmr

ABSTRACTAn IR and multiple quantum NMR (MQNMR) study of hydrogen microstructure in three boron doped a-Si:H is discussed. The total Si-bonded H content of all films was 6.5 ± 1.0 at.% as determined by the 640 cm-1 IR wagging mode, but their boron content, which was determined by secondary ion mass spectrometry, ranged from 0.02 to 0.3 at. %. The number of correlated hydrogen, as measured at a preparation time of 600 μSwas found to be more weakly dependent on the boron content than previously observed in phosphorous-doped glow-discharge films. Upon annealing at 220 °C the MQNMR spectrum show a moderate increase in the number of correlated hydrogen in all three samples.

Deposition of Amorphous Hydrogenated Silicon Films by VUV Laser CVD: Influence of Substrate Temperature

1995 ◽  
Vol 377 ◽  
Author(s):  
H. Karstens ◽  
P. Hess
Keyword(s):  
Substrate Temperature ◽  
Dark Conductivity ◽  
Band Gap Energy ◽  
Poor Quality ◽  
Buffer Gas ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Influence Of Substrate ◽  
Parallel Configuration ◽  
Laser Cvd

ABSTRACTAmorphous hydrogenated silicon (a-Si:H) films were deposited from disilane at substrate temperatures between 180 and 390 °C using a F2-laser (157 nm) in a parallel configuration. Material properties such as hydrogen content, SiH and SiH2 group concentration, photo-and dark conductivity, band-gap energy and the Urbach parameter were determined as a function of the deposition temperature. The material with the best optical and electronical properties was found for a substrate temperature of 260 °C. Using argon as the buffer gas instead of helium results in films of poor quality.

scholarly journals Influence of Substrate Temperature during InxSy Sputtering on Cu(In,Ga)Se2/Buffer Interface Properties and Solar Cell Performance

2020 ◽  
Vol 10 (3) ◽  
pp. 1052 ◽  
Author(s):  
Dimitrios Hariskos ◽  
Wolfram Hempel ◽  
Richard Menner ◽  
Wolfram Witte
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Substrate Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Buffer Layers ◽  
Solar Cell Performance ◽  
Sodium Accumulation ◽  
Influence Of Substrate ◽  
Copper Depletion ◽  
Conversion Efficiencies

Indium sulfide (InxSy)—besides CdS and Zn(O,S)—is already used as a buffer layer in chalcopyrite-type thin-film solar cells and modules. We discuss the influence of the substrate temperature during very fast magnetron sputtering of InxSy buffer layers on the interface formation and the performance of Cu(In,Ga)Se2 solar cells. The substrate temperature was increased from room temperature up to 240 °C, and the highest power conversion efficiencies were obtained at a temperature plateau around 200 °C, with the best values around 15.3%. Industrially relevant in-line co-evaporated polycrystalline Cu(In,Ga)Se2 absorber layers were used, which yield solar cell efficiencies of up to 17.1% in combination with a solution-grown CdS buffer. The chemical composition of the InxSy buffer as well as of the Cu(In,Ga)Se2/InxSy interface was analyzed by time-of-flight secondary ion mass spectrometry. Changes from homogenous and stoichiometric In2S3 layers deposited at RT to inhomogenous and more sulfur-rich and indium-deficient compositions for higher temperatures were observed. This finding is accompanied with a pronounced copper depletion at the Cu(In,Ga)Se2 absorber surface, and a sodium accumulation in the InxSy buffer and at the absorber/buffer interface. These last two features seem to be the origin for achieving the highest conversion efficiencies at substrate temperatures around 200 °C.

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