Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

1994 ◽  
Vol 336 ◽  
Author(s):  
Kyung Ha Lee ◽  
Byeong Yeon Moon ◽  
Yoo Chan Chung ◽  
Seung Min Lee ◽  
Sung Chul Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Hydrogen Incorporation ◽  
Ion Doping ◽  
Pressure Chemical ◽  
Si Films ◽  
P Type

ABSTRACTWe have studied the effect of ion doping on the electrical properties for atmospheric pressure chemical vapor deposition (APCVD) Amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimum doping temperatures for n- and p-type a-Si films were found to be > 10−2 and > 10−4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-S.i.H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

Effect of Ion Doping Temperature on Electrical Properties of APCVD A-Si

1994 ◽  
Vol 345 ◽  
Author(s):  
Kyung Ha Lee ◽  
Byeong Yeon Moon ◽  
Yoo Chan Chung ◽  
Seung Min Lee ◽  
Sung Chul Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Field Effect Mobility ◽  
Hydrogen Incorporation ◽  
Plasma Enhanced Cvd ◽  
Ion Doping ◽  
Si Films ◽  
P Type

AbstractWe have studied the effect of ion doping on the electrical properties for atmospheric pressute chemical vapor deposition (APCVD) amorphous silicon (a-Si) films. The room temperature conductivities after ion doping at optimurr doping tenperatures for n− and p-type a-Si films were found to be > 10−2 and >10−4 S/cm, respectively. The unintentional hydrogen incorporation into a-Si during ion doping enhances the quality of ion doped APCVD a-Si as compared to that of plasma enhanced CVD (PECVD) a-Si:H. We obtained the field effect mobility of > 1 cm2/Vs for APCVD a-Si TFT using ion doped n+-layer.

APCVD Deposition of Si Film on SiO2 Patterned Si (111) Substrates for Solar Cells

2011 ◽  
Vol 295-297 ◽  
pp. 1211-1216
Author(s):  
Chun Yan Duan ◽  
Bin Ai ◽  
Jian Jun Lai ◽  
Chao Liu ◽  
You Jun Deng ◽  
...  
Keyword(s):  
Atmospheric Pressure ◽  
Polycrystalline Silicon ◽  
Silicon Film ◽  
Standard Condition ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Triangular Prism ◽  
Pressure Chemical ◽  
Si Films ◽  
Surface Morphologies

We have investigated the deposition of silicon films on SiO2 patterned Si(111) substrates by atmospheric pressure chemical vapor deposition (APCVD) under standard condition. Oxidized silicon wafers with different sizes of circular and striated patterns were used as substrates for deposition of 35 μm silicon films. The influence of surface morphologies of substrates on epitaxial Si films has been discussed. The crystalline structures of the epitaxial Si films rely on the prepatterned substrates. Triangular prism-shaped grains have been obtained after depositing silicon film on substrates with circular patterns. While different size polycrystalline silicon grains appear on surfaces of Si films grown on SiO2 regions of substrates along the axis of striated patterns. Twins defects were observed in epitaxial Si films grown on SiO2 layers of the pretreated substrates.

Growth of Monolayer WS2 Single Crystals with Atmospheric Pressure CVD: Role of Temperature

MRS Advances ◽  
2019 ◽  
Vol 4 (3-4) ◽  
pp. 255-262
Author(s):  
Yong Xie ◽  
Guanfei Wang ◽  
Zhan Wang ◽  
Tang Nan ◽  
Haolin Wang ◽  
...  
Keyword(s):  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Optical Microscope ◽  
Nucleation And Growth ◽  
Pressure Chemical ◽  
Different Temperatures ◽  
Individual Domain

ABTRACTIt has been demonstrated that the introduction of NaCl can significantly improve the quality of monolayer WS2 at the growth temperatures ranging from 700°C to 850°C by atmospheric pressure chemical vapor deposition (APCVD) without the assistant of hydrogen. Here, the influence of NaCl on the nucleation and growth of WS2 has been thoroughly investigated. The morphology and quality of WS2 grown with different temperatures are discussed by optical microscope, Raman and Photoluminescence (PL) spectra. It was found that amount of NaCl can efficiently influence the morphology and quality of WS2 crystals. PL intensity of WS2 crystal increases around three times from the center region to the edge of an individual domain, which may be attributed to the appearance of small triangle hollows formed during the growth at the edge of single crystal WS2.

scholarly journals On the Structural, Morphological, and Electrical Properties of Carbon Nanowalls Obtained by Plasma-Enhanced Chemical Vapor Deposition

2020 ◽  
Vol 2020 ◽  
pp. 1-6
Author(s):  
Bogdan Bita ◽  
Sorin Vizireanu ◽  
Daniel Stoica ◽  
Valentin Ion ◽  
Sasa Yehia ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Plasma Treatment ◽  
Room Temperature ◽  
Chemical Vapour ◽  
Chemical Vapor ◽  
Current Voltage ◽  
Structural And Electrical Properties ◽  
Carbon Nanowalls ◽  
P Type ◽  
Top View

In this study, we investigated the morphological, structural, and electrical properties of carbon nanowall (CNW) structures obtained by plasma-enhanced chemical vapour deposition (PECVD) and underlined the induced effects of argon/nitrogen (Ar/N2) postsynthesis plasma treatment on the electrical behaviour. The top view and cross-section scanning electron microscopy micrographs revealed that the fabricated samples are about 18 μm height, and the edges are less than 10 nm. The Raman analysis showed the presence of the specific peaks of graphene-based materials, i.e., D-band, G-band, D′-band, 2D-band, and D+G-band. The average values of the electrical resistance of fabricated samples were evaluated by current-voltage characteristics acquired at room temperature, in the ranges of 0 V–0.2 V, and an increase was noticed with about 50% after the Ar/N2 postsynthesis plasma treatment compared to pristine samples. Moreover, the Hall measurements proved that the obtained CNW structures had p-type conductivity (Hall coefficient was 0.206 m3/C), and the concentration of charge carriers was 7.8×1019 cm-3, at room temperature.

Deposition of Heavily-Doped μc-Silicon Thin Films by Remote Plasma-Enhanced Chemical-Vapor Deposition Process (remote PECVD)

1990 ◽  
Vol 204 ◽  
Author(s):  
C. Wang ◽  
C.H. Bjorkman ◽  
D.R. Lee ◽  
M.J. Williams ◽  
G. Lucovsky
Keyword(s):  
Vapor Deposition ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Silicon Thin Films ◽  
Mos Devices ◽  
Exit Port ◽  
Heavily Doped ◽  
Si Films ◽  
P Type

ABSTRACTWe have succeeded in depositing both activated n- and p-type μc-Si, by a low temperature, 250°C, remote PECVD process in which dopant gases (PH3 or B2H6)/Silane (SiH4) mixtures are injected downstream from the exit port of a He/H2 plasma. The room temperature conductivities and activation energies for the n- and p-type μc-Si are respectively, 40 S/cm with Eaa=0.018 eV, and 5 S/cm with Ea =0.040 eV. Doped μc-Si is obtained for PH3/SiH4 ratios up to 1%, and for B2H6/SiH4 ratios to 0.1%. For B2H6/SiH4 ratios < 0.1%, the deposited p-type material is doped a-Si rather than doped μc-Si. We have shown that these heavily doped μc-Si film are a viable candidate for the gate electrode in MOS devices. The application of these doped μc-Si films in p-i-n diode devices has also been studied.

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