Wide-Gap a-Si:H Fabricated by Controlling Voids

1996 ◽  
Vol 420 ◽  
Author(s):  
K. Yoshino ◽  
W. Futako ◽  
Y. Wasai ◽  
I. Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Hydrogenated Amorphous Silicon ◽  
Band Gaps ◽  
High Quality ◽  
Chemical Annealing ◽  
Improved Stability ◽  
Wide Gap ◽  
Hydrogenated Amorphous ◽  
Defect Densities

AbstractHigh quality wide gap hydrogenated amorphous silicon has been prepared using the chemical annealing technique. It was possible to prepare materials with band gaps ranging 1.8 to 2.1 eV by varying the preparation parameters. Low defect densities less than (3–8) x 1015 cm-3 could be maintained over the entire band gap range. Improved stability for light soaking was also observed in the wide gap materials.

Fabrication of narrow-band-gap hydrogenated amorphous silicon by chemical annealing

1998 ◽  
Vol 84 (3) ◽  
pp. 1333-1339 ◽  
Author(s):  
Wataru Futako ◽  
Shinya Takeoka ◽  
Charles M. Fortmann ◽  
Isamu Shimizu
Keyword(s):  
Amorphous Silicon ◽  
Band Gap ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Annealing ◽  
Hydrogenated Amorphous

Modulation of Growing Surface with Atomic Hydrogen and Excited Argon to Fabricate Narrow Gap a-Si:H

1996 ◽  
Vol 420 ◽  
Author(s):  
W. Futako ◽  
I. Shimizu ◽  
C. M. Fortmann
Keyword(s):  
Thin Layer ◽  
Substrate Temperature ◽  
Amorphous Silicon ◽  
Atomic Hydrogen ◽  
Hydrogenated Amorphous Silicon ◽  
High Substrate Temperature ◽  
Narrow Gap ◽  
High Quality ◽  
Chemical Annealing ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon (a-Si:H) with a gaps narrower than 1.7 eV were made by repeating the deposition of a thin layer (1–3 nm thick) and the treatment of growing surface with a mixture of H and Ar*. Crystallization induced by permeation of hydrogen into the subsurface at high substrate temperature (>200C) was efficiently prevented by treating with a mixture of H and Ar*. The activation of growing surface may arise from releasing a part of hydrogen on surface by treating with Ar*. High quality a-Si:H films containing hydrogen of 3 atom % with a gap of 1.6 eV were made by chemical annealing with a mixture of H and Ar*.

High-Quality Wide-Gap Hydrogenated Amorphous Silicon Fabricated Using Hydrogen Plasma Post-Treatment

1994 ◽  
Vol 33 (Part 1, No. 4A) ◽  
pp. 1773-1777 ◽  
Author(s):  
Shingo Okamoto ◽  
Yoshihiro Hishikawa ◽  
Sadaji Tsuge ◽  
Manabu Sasaki ◽  
Kunimoto Ninomiya ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogen Plasma ◽  
Hydrogenated Amorphous Silicon ◽  
Post Treatment ◽  
High Quality ◽  
Wide Gap ◽  
Hydrogenated Amorphous

High Quality Hydrogenated Amorphous Silicon Films with Significantly Improved Stability

1998 ◽  
Vol 507 ◽  
Author(s):  
Shuran Sheng ◽  
Xianbo Liao ◽  
Zhixun Ma ◽  
Guozhen Yue ◽  
Yongqian Wang ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Low Light ◽  
High Quality ◽  
Improved Stability ◽  
Robust Network ◽  
Hydrogenated Amorphous

ABSTRACTHigh quality hydrogenated amorphous silicon (a-Si:H) films have been prepared by a simple “uninterrupted growth/annealing” plasma enhanced chemical vapor deposition (PECVD) technique, combined with a subtle boron-compensated doping. These a-Si:H films possess a high photosensitivity over 106, and exhibit no degradation in photoconductivity and a low light-induced defect density after prolonged illumination. The central idea is to control the growth conditions adjacent to the critical point of phase transition from amorphous to crystalline state, and yet to locate the Fermi level close to the midgap. Our results show that the improved stability and photosensitivity of a-Si:H films prepared by this method can be mainly attributed to the formation of a more robust network structure and reduction in the precursors density of light-induced metastable defects.

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Guofu Hou ◽  
Xinhua Geng ◽  
Xiaodan Zhang ◽  
Ying Zhao ◽  
Junming Xue ◽  
...  
Keyword(s):  
Phase Transition ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
High Rate ◽  
Very High Frequency ◽  
High Quality ◽  
Working Pressure ◽  
Hydrogen Dilution ◽  
Hydrogenated Amorphous

AbstractHigh rate deposition of high quality and stable hydrogenated amorphous silicon (a-Si:H) films were performed near the threshold of amorphous to microcrystalline phase transition using a very high frequency plasma enhanced chemical vapor deposition (VHF-PECVD) method. The effect of hydrogen dilution on optic-electronic and structural properties of these films was investigated by Fourier-transform infrared (FTIR) spectroscopy, Raman scattering and constant photocurrent method (CPM). Experiment showed that although the phase transition was much influenced by hydrogen dilution, it also strongly depended on substrate temperature, working pressure and plasma power. With optimized condition high quality and high stable a-Si:H films, which exhibit σph/σd of 4.4×106 and deposition rate of 28.8Å/s, have been obtained.

scholarly journals High quality crystalline silicon surface passivation by combined intrinsic and n-type hydrogenated amorphous silicon

2011 ◽  
Vol 99 (20) ◽  
pp. 203503 ◽  
Author(s):  
Jan-Willem A. Schüttauf ◽  
Karine H. M. van der Werf ◽  
Inge M. Kielen ◽  
Wilfried G. J. H. M. van Sark ◽  
Jatindra K. Rath ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
High Quality ◽  
Hydrogenated Amorphous ◽  
Silicon Surface Passivation

scholarly journals Silicon Heterojunction Solar Cells with p-Type Silicon Carbon Window Layer

Crystals ◽  
2019 ◽  
Vol 9 (8) ◽  
pp. 402 ◽  
Author(s):  
Chia-Hsun Hsu ◽  
Xiao-Ying Zhang ◽  
Ming Jie Zhao ◽  
Hai-Jun Lin ◽  
Wen-Zhang Zhu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Flow Rate ◽  
Computer Aided Design ◽  
Hydrogenated Amorphous Silicon ◽  
Wavelength Region ◽  
Window Layer ◽  
Solar Cell Performance ◽  
Hydrogenated Amorphous

Boron-doped hydrogenated amorphous silicon carbide (a-SiC:H) thin films are deposited using high frequency 27.12 MHz plasma enhanced chemical vapor deposition system as a window layer of silicon heterojunction (SHJ) solar cells. The CH4 gas flow rate is varied to deposit various a-SiC:H films, and the optical and electrical properties are investigated. The experimental results show that at the CH4 flow rate of 40 sccm the a-SiC:H has a high band gap of 2.1 eV and reduced absorption coefficients in the whole wavelength region, but the electrical conductivity deteriorates. The technology computer aided design simulation for SHJ devices reveal the band discontinuity at i/p interface when the a-SiC:H films are used. For fabricated SHJ solar cell performance, the highest conversion efficiency of 22.14%, which is 0.33% abs higher than that of conventional hydrogenated amorphous silicon window layer, can be obtained when the intermediate band gap (2 eV) a-SiC:H window layer is used.

Sign in / Sign up

Export Citation Format

Share Document