Soluble Conducting Polythiophenes for Charge Dissipation in Electron Beam Lithography

1993 ◽  
Vol 328 ◽  
Author(s):  
Wu-Song Huang
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Water Soluble ◽  
Acid Form ◽  
Salt Form ◽  
Chemical Polymerization ◽  
Polymeric Layer ◽  
Aqueous Base ◽  
Soluble Acid ◽  
Photoacid Generator

ABSTRACTIn electron beam lithography, charging on photoresist usually causes image distortion and placement error. To dissipate the charge, a conductive polymeric layer can be introduced either over or under the photoresist coating. In this paper, we will discuss the approach of using toluene and xylene soluble polyalkylthiophcne in combination with photoacid generator as a discharge underlayer or interlayer beneath photoresist to dissipate the accumulated charge during li-bcam exposure. We will also discuss the use of water soluble acid or ammonium salt form of poly 3- (cthanesulfonate) thiophene as discharge. toplayer. During the resist image developing process, the toplayer will be removed by aqueous base. Therefore, it is advantageous to use discharge toplayer due to its simplicity. In this study, the salt and acid form of poly 3- (ethanesulfonate) thiophene was synthesized through chemical polymerization of the corresponding methanesulfonate ester. It exhibits the same properties as that of electrochemically synthesized polymer reported in the literature.

Aqueous base developable epoxy resist for high sensitivity electron beam lithography

2000 ◽  
Vol 53 (1-4) ◽  
pp. 453-456 ◽  
Author(s):  
P. Argitis ◽  
N. Glezos ◽  
M. Vasilopoulou ◽  
I. Raptis ◽  
M. Hatzakis ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
High Sensitivity ◽  
Aqueous Base

A photoacid generator integrated terpolymer for electron beam lithography applications: sensitive resist with pattern transfer potential

2017 ◽  
Vol 1 (9) ◽  
pp. 1895-1899 ◽  
Author(s):  
Santu Nandi ◽  
Midathala Yogesh ◽  
Pulikanti Guruprasad Reddy ◽  
Satinder K. Sharma ◽  
Chullikkattil P. Pradeep ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Electron Beam Lithography ◽  
Pattern Transfer ◽  
Photoacid Generator ◽  
Transfer Potential

A new PAG integrated electron beam active terpolymer resist has been developed for high resolution pattern transfer applications.

Silk fibroin as a water-soluble bio-resist and its thermal properties

RSC Advances ◽  
2016 ◽  
Vol 6 (14) ◽  
pp. 11863-11869 ◽  
Author(s):  
Junko Morikawa ◽  
Meguya Ryu ◽  
Ksenia Maximova ◽  
Armandas Balčytis ◽  
Gediminas Seniutinas ◽  
...  
Keyword(s):  
Electron Beam ◽  
Thermal Properties ◽  
Silk Fibroin ◽  
Electron Beam Lithography ◽  
Beta Sheets ◽  
Water Soluble ◽  
Crystalline Domains

E-beam exposure unzips beta-sheets in crystalline domains of silk fibroin and makes it water-soluble, enabling its usage as an aqueous-based electron beam lithography resist.

Synthesis of Novel Photoacid Generator Containing Resist Polymer for Electron Beam Lithography

2012 ◽  
Vol 12 (1) ◽  
pp. 725-729 ◽  
Author(s):  
Koh Eun Lee ◽  
Min Jeong Kim ◽  
Jae Beom Yoo ◽  
Hemant S. Mondkar ◽  
Kyunghwa Sohn ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Photoacid Generator

Effect of Amine Additive in Photoacid Generator Bonded Resist for Extreme Ultraviolet and Electron Beam Lithography

2009 ◽  
Vol 48 (6) ◽  
pp. 06FC10
Author(s):  
Tomomi Nakahara ◽  
Takeo Watanabe ◽  
Hiroo Kinoshita ◽  
Takayasu Mochizuki ◽  
Yoshiyuki Takahara ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Extreme Ultraviolet ◽  
Photoacid Generator

Lithography below 100 nm

1983 ◽  
Vol 41 ◽  
pp. 96-99
Author(s):  
L. D. Jackel
Keyword(s):  
Spatial Distribution ◽  
Electron Beam ◽  
Electron Scattering ◽  
Electron Beam Lithography ◽  
Substrate Material ◽  
Local Electron ◽  
Electron Dose ◽  
Positive Resist ◽  
Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

2020 ◽  
Vol 59 (12) ◽  
pp. 126502
Author(s):  
Moataz Eissa ◽  
Takuya Mitarai ◽  
Tomohiro Amemiya ◽  
Yasuyuki Miyamoto ◽  
Nobuhiko Nishiyama
Keyword(s):  
Electron Beam ◽  
Proximity Effect ◽  
Electron Beam Lithography ◽  
Photonic Waveguides ◽  
Proximity Effect Correction
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