Cathodoluminescence Spectroscopy Studies of Growth Induced Deep Levels at GaInP.

1993 ◽  
Vol 325 ◽  
Author(s):  
R. Enrique Viturro ◽  
John D. Varriano ◽  
Gary W. Wicks
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Deep Levels ◽  
Spectroscopy Study ◽  
Recombination Efficiency ◽  
Cathodoluminescence Spectroscopy ◽  
Spectroscopy Studies ◽  
Electronic Defects

AbstractWe report a cathodoluminescence spectroscopy study of growth-induced deep levels at GaInP epilayers grown by Molecular Beam Epitaxy under various conditions. This approach allows the identification of deep levels which appear to play an important role in the band to band radiative recombination efficiency of these GaInP films. Control of these electronic defects is crucial for the performance of visible optoelectronic devices.

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency

Study of radiative recombination efficiency in 28–180‐Å‐wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

1994 ◽  
Vol 75 (8) ◽  
pp. 4152-4155 ◽  
Author(s):  
D. Z. Garbuzov ◽  
V. P. Evtikhiev ◽  
N. I. Katsavets ◽  
A. B. Komissarov ◽  
T. E. Kudrik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Recombination Efficiency

Nitrides optoelectronic devices grown by molecular beam epitaxy

2007 ◽  
Vol 204 (1) ◽  
pp. 221-226 ◽  
Author(s):  
M. Kauer ◽  
V. Bousquet ◽  
S. E. Hooper ◽  
J. M. Barnes ◽  
J. Windle ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices

Deep levels in GaAs grown by atomic layer molecular beam epitaxy

1994 ◽  
Vol 65 (22) ◽  
pp. 2848-2850 ◽  
Author(s):  
E. Gombia ◽  
R. Mosca ◽  
A. Bosacchi ◽  
M. Madellaf ◽  
S. Franchi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels

Shallow donors and deep levels in GaAs grown by atomic layer molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 261-265
Author(s):  
A. Bosacchi ◽  
E. Gombia ◽  
R. Mosca ◽  
S. Franchi ◽  
A. Carnera ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Deep Levels ◽  
Shallow Donors

P-Type Doping with Arsenic in MBE-HgCdTe Using Planar Doping Approach

1996 ◽  
Vol 450 ◽  
Author(s):  
F. Aqariden ◽  
P. S. Wijew Arnasuriya ◽  
S. Rujirawat ◽  
S. Sivananthan
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Mbe Growth ◽  
In Situ Fabrication ◽  
P Type ◽  
Arsenic Incorporation ◽  
Planar Doping

ABSTRACTThe results of arsenic incorporation in HgCdTe (MCT) layers grown by molecular beam epitaxy (MBE) are reported. The incorporation into MBE-MCT was carried out by a technique called planar doping. Arsenic was successfully incorporated during the MBE growth or after a low temperature anneal as acceptors. These results are very promising for in-situ fabrication of advanced optoelectronic devices using HgCdTe material.

Stacked Layers of C-Induced Ge Quantum Dots

1998 ◽  
Vol 533 ◽  
Author(s):  
O. G. Schmidt ◽  
K. Eberl ◽  
S. Schieker ◽  
N. Y. Jin-Phillipp ◽  
F. Phillipp ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Vertical Alignment ◽  
Strain Fields ◽  
Identical Structure ◽  
Strain Compensation ◽  
Ge Quantum Dots

AbstractFifty layers of carbon-induced germanium dots, separated by 9.6 nm Si, are stacked by solid source molecular beam epitaxy. Each dot layer consists of 0.2 monolayers of pre-deposited carbon and 2.4 monolayers of post-grown Ge. These carbon-induced germanium dots are only 10 to 15 nm in diameter and 1 to 2 nm in height. Vertical alignment due to penetrating strain fields of underlying dot layers is not observed. Unlike to an identical structure without the pre-growth of carbon, a variety of advantageous aspects such as strain compensation, strongly enhanced no-phonon photoluminescence at a wavelength of around 1.3 μm and the possibility of effective waveguiding make this stack of C-induced Ge islands an attractive structure for Si based optoelectronic devices.

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