Study of radiative recombination efficiency in 28–180‐Å‐wide AlGaAs/GaAs quantum wells grown by molecular beam epitaxy

1994 ◽  
Vol 75 (8) ◽  
pp. 4152-4155 ◽  
Author(s):  
D. Z. Garbuzov ◽  
V. P. Evtikhiev ◽  
N. I. Katsavets ◽  
A. B. Komissarov ◽  
T. E. Kudrik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Recombination Efficiency

GaN/AlN multiple quantum wells grown by molecular beam epitaxy: effect of growth kinetics on radiative recombination efficiency

2020 ◽  
Vol 709 ◽  
pp. 138216
Author(s):  
Chirantan Singha ◽  
Sayantani Sen ◽  
Alakananda Das ◽  
Anirban Saha ◽  
Pallabi Pramanik ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Growth Kinetics ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Recombination Efficiency

Enhanced radiative recombination in AlGaN quantum wells grown by molecular-beam epitaxy

2006 ◽  
Vol 40 (4) ◽  
pp. 454-458 ◽  
Author(s):  
B. A. Borisov ◽  
S. N. Nikishin ◽  
V. V. Kuryatkov ◽  
V. I. Kuchinskiĭ ◽  
M. Holtz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Radiative Recombination ◽  
Molecular Beam

Cathodoluminescence Spectroscopy Studies of Growth Induced Deep Levels at GaInP.

1993 ◽  
Vol 325 ◽  
Author(s):  
R. Enrique Viturro ◽  
John D. Varriano ◽  
Gary W. Wicks
Keyword(s):  
Molecular Beam Epitaxy ◽  
Radiative Recombination ◽  
Molecular Beam ◽  
Optoelectronic Devices ◽  
Deep Levels ◽  
Spectroscopy Study ◽  
Recombination Efficiency ◽  
Cathodoluminescence Spectroscopy ◽  
Spectroscopy Studies ◽  
Electronic Defects

AbstractWe report a cathodoluminescence spectroscopy study of growth-induced deep levels at GaInP epilayers grown by Molecular Beam Epitaxy under various conditions. This approach allows the identification of deep levels which appear to play an important role in the band to band radiative recombination efficiency of these GaInP films. Control of these electronic defects is crucial for the performance of visible optoelectronic devices.

Optical properties of quantum wells grown upon gas source molecular‐beam epitaxy low‐temperature buffers

1991 ◽  
Vol 69 (11) ◽  
pp. 7942-7944 ◽  
Author(s):  
K. T. Shiralagi ◽  
R. A. Puechner ◽  
K. Y. Choi ◽  
R. Droopad ◽  
G. N. Maracas
Keyword(s):  
Optical Properties ◽  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Gas Source

Laser Quality AlGaAs-GaAs Quantum Wells Grown on Low Temperature GaAs

1991 ◽  
Vol 241 ◽  
Author(s):  
Y. Hwang ◽  
D. Zhang ◽  
T. Zhang ◽  
M. Mytych ◽  
R. M. Kolbas
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Quantum Wells ◽  
Barrier Layer ◽  
Molecular Beam ◽  
Optical Quality ◽  
First Order ◽  
Gaas Buffer Layer ◽  
Low Temperature Gaas ◽  
Lt Gaas

ABSTRACTIn this work we demonstrate that photopumped quantum wellheterostructure lasers with excellent optical quality can be grown ontop of a LT GaAs buffer layer by molecular beam epitaxy. Hightemperature thermal annealing of these lasers blue-shifts the laseremission wavelengths but the presence/absence of a LT GaAs layerhad little effect on the overall laser thresholds. Also, to first order itwas not necessary to include an AlAs barrier layer to preventadverse effects (as has been necessary in the gate stack of MESFETs to prevent carrier compensation).

Photoluminescence from GaAs/AlGaAs Quantum Wells Grown at 350°C by Conventional Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 10A) ◽  
pp. L1726-L1728 ◽  
Author(s):  
Yoshinobu Sekiguchi ◽  
Sei-ichi Miyazawa ◽  
Natsuhiko Mizutani
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Wells ◽  
Molecular Beam
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