In-Process Diagnostic System for Semiconductor Materials Using UHV Wafer Transfer Chamber

1993 ◽  
Vol 324 ◽  
Author(s):  
F. Uchida ◽  
M. Matsui ◽  
H. Kakibayashi ◽  
M. Kouguchi ◽  
A. Mutoh ◽  
...  
Keyword(s):  
High Vacuum ◽  
Diagnostic System ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Wafer Surface ◽  
Measuring Instruments ◽  
Ion Pump ◽  
Semiconductor Wafer ◽  
Chemical Conditions

AbstractWe have developed a novel stand-alone diagnostic system that can analyze a semiconductor wafer surface in each process without introducing contamination. This allows us to analyze the relationship between chemical conditions and device properties.A UHV (Ultra High Vacuum) wafer transfer chamber is used between the measuring apparatus and the semiconductor processes. The chamber vacuum system, which consists of a battery driven ion pump and a liquid N2 shroud, achieves a pressure of 2 × 10−8 Pa (corresponding to about 100 min. until one monolayer of contamination has been adsorbed).Wafer transfer lines have been constructed between semiconductor vacuum processes, CVD (Chemical Vapor Deposition) and measuring instruments, ESCA (Electron Spectroscopy for Chemical Analysis) and TEM (Transmission Electron Microscope). Our results from ESCA and TEM showed measurements that carbon contamination and oxidation was suppressed.

scholarly journals Performance of an Ultra-High Vacuum System Employing Sorption Pump and Getter-Ion Pump

Shinku ◽  
1963 ◽  
Vol 6 (3) ◽  
pp. 89-95
Author(s):  
Zenjiro ODA ◽  
Tatsuo ASAMAKI
Keyword(s):  
High Vacuum ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Ion Pump

Relationship Between Graded Layer Structures and Defects in Silicon-Germanium Virtual Substrates

2000 ◽  
Vol 648 ◽  
Author(s):  
Kazuki Mizushima ◽  
Ichiro Shiono ◽  
Kenji Yamaguchi ◽  
Naoki Muraki
Keyword(s):  
Surface Roughness ◽  
Silicon Germanium ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Optimum Number ◽  
Threading Dislocation ◽  
Typical Sample ◽  
Dislocation Densities

AbstractSilicon-germanium virtual substrates have been synthesized by low-pressure chemical vapor deposition. We obtained threading dislocation densities ranging from 105 to 106 cm−2, surface roughness ranging from 1.5 to 4 nm, and also cross-hatch pattern densities, depending on the grading rate and top layer germanium composition. For the typical sample, which has a linear-graded structure with a grading rate of 20%/[µm, and germanium composition of 30 % at the top layer, we obtained dislocation densities of about 106 cm−2 and root mean squared surface roughness of about 3 nm. The obtained dislocation densities are equivalent with the virtual substrates synthesized by ultra-high vacuum system. On the other hand the surface roughness is superior to the typical reported values. In this study three kinds of structures, i.e. linear-graded, stepwise, and graded-step structures, were considered. We found the defects are effectively reduced by introduction of an optimum number of steps in the graded layer.

Design on UHV System with TSP

2013 ◽  
Vol 310 ◽  
pp. 319-322
Author(s):  
Jin Hua Zheng ◽  
Cong Hui Li ◽  
Chong Zhang ◽  
Yun Feng Chao
Keyword(s):  
Vacuum Chamber ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Normal Operation ◽  
Vacuum System ◽  
Measuring Instruments ◽  
Total Flow ◽  
Vane Pump ◽  
Rotary Vane Pump ◽  
The One

A UHV(ultra-high vacuum) system, which used as deposition equipment with the assistance of high and low vacuum measuring instruments and other accessories, was designed in this paper. A CMP (composite molecular pump) in parallel with TSP (titanium sublimation pump) as the main pump and a rotary-vane pump as the backing pump were designed in this system. After a CMP with displacement 2300l/s was chosen as the one of the main pumps, the total flow conductance between the outlet of vacuum chamber and the CMP was 1344l/s. The rough pump-down time was approximate 5 min by using a rotary-vane pump with pumping speeds 15l/s. In order to ensure the normal operation of the main pumps, a water chilling unit was designed in the system, which can achieve limiting vacuum of 5×10-6Pa in the vacuum chamber of 0.2 m3.

Aluminum Chemical Vapor Deposition Using Triisobutylaluminum: Mechanism, Kinetics, and Deposition Rates at Steady State

1988 ◽  
Vol 131 ◽  
Author(s):  
Brian E. Bent ◽  
Lawrence Dubois ◽  
Ralph G. Nuzzo
Keyword(s):  
Chemical Vapor Deposition ◽  
Kinetic Parameters ◽  
Gas Phase ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Aluminum Atom ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Vacuum System ◽  
Aluminum Surface

ABSTRACTAn important step in the chemical vapor deposition (CVD) of aluminum from triisobutylaluminum (TIBA) is the reaction between TIBA (adsorbed from the gas phase) and the growing aluminum surface. We have studied this chemistry by impinging TIBA under collisionless conditions in an ultra-high vacuum system onto single crystal Al(111) and Al(100) substrates. We find that when TIBA (340K) collides with an aluminum surface heated to between 500 and 600K, the aluminum atom is cleanly abstracted from this precursor with near unit reaction probability to deposit, epitaxially, carbon-free aluminum films. The gas phase products are isobutylene and hydrogen. From monolayer thermal desorption experiments, we have determined the kinetic parameters for the rate-determining step, a β-hydride elimination reaction by surface bound isobutyl ligands. Using these kinetic parameters and a Langmuir absorption model, we can predict the rate of aluminum deposition at pressures ranging from 10−6 to 1 Torr.

Low Temperature Silicon Epitaxy Grown by Electron-Beam Evaporation in an Ultra-High Vacuum System

1991 ◽  
Vol 237 ◽  
Author(s):  
Yung-Jen Lin ◽  
Tri-Rung Yew
Keyword(s):  
Electron Beam ◽  
Thermal Desorption ◽  
High Vacuum ◽  
High Energy ◽  
Electron Beam Evaporation ◽  
Ultra High Vacuum ◽  
Native Oxide ◽  
Vacuum System ◽  
Wafer Surface ◽  
Epitaxial Silicon

ABSTRACTThis paper presents the results of silicon epitaxial growth on silicon windows surrounded with oxide walls by electron-beam evaporation in an ultra-high vacuum system with a load-lock chamber. The wafer surface was in-situ cleaned in the growth chamber to remove native oxide by thermal desorption at about 840 °C and a base pressure of better than 2 × 10-9 Torr. The growth temperature was 200°C or higher. The pre-epitaxial silicon surface structure was inspected by reflection high energy electron diffraction (RHEED). The influence of the thermal desorption on the quality of the epi/substrate interface and epitaxial layers was studied. In addtion, the deposition parameters which control the epitaxial quality were investigated. The epitaxial films were characterized by cross-sectional trasmission electron microscopy (XTEM) and secondary ion mass spectroscopy (SIMS).

The design and study of a compact bakeable ultra-high vacuum system for calibrating absolutely low pressure gauges

Vacuum ◽  
1977 ◽  
Vol 27 (9) ◽  
pp. 511-517 ◽  
Author(s):  
K.J. Close ◽  
R.S. Vaughan-Watkins ◽  
J Yarwood
Keyword(s):  
High Vacuum ◽  
Low Pressure ◽  
Ultra High Vacuum ◽  
Vacuum System

Challenge to 200 mm 3C-SiC Wafers Using SOI

2005 ◽  
Vol 483-485 ◽  
pp. 205-208 ◽  
Author(s):  
Motoi Nakao ◽  
Hirofumi Iikawa ◽  
Katsutoshi Izumi ◽  
Takashi Yokoyama ◽  
Sumio Kobayashi
Keyword(s):  
Cross Section ◽  
Vapor Deposition ◽  
Seed Layer ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Average Thickness ◽  
Entire Region ◽  
Transmission Electron ◽  
Good Crystallinity

200 mm wafer with 3C-SiC/SiO2/Si structure has been fabricated using 200 mm siliconon- insulator (SOI) wafer. A top Si layer of 200 mm SOI wafer was thinned down to approximately 5 nm by sacrificial oxidization, and the ultrathin top Si layer was metamorphosed into a 3C-SiC seed layer using a carbonization process. Afterward, an epitaxial SiC layer was grown on the SiC seed layer with ultra-high vacuum chemical vapor deposition. A cross-section transmission electron microscope indicated that a 3C-SiC seed layer was formed directly on the buried oxide layer of 200 mm wafer. The epitaxial SiC layer with an average thickness of approximately 100 nm on the seed was recognized over the entire region of the wafer, although thickness uniformity of the epitaxial SiC layer was not as good as that of SiC seed layer. A transmission electron diffraction image of the epitaxial SiC layer showed a monocrystalline 3C-SiC(100) layer with good crystallinity. These results indicate that our method enables to realize 200 mm SiC wafers.

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum
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