Optical Characterization of AlInP/GaAs Heterostructures

1993 ◽  
Vol 324 ◽  
Author(s):  
F.G. Johnson ◽  
G.E. Kohnke ◽  
G.W. Wicks
Keyword(s):  
Ground State ◽  
Room Temperature ◽  
Optical Transmission ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Interface Roughness ◽  
Phonon Modes ◽  
Group V ◽  
Longitudinal Acoustic Phonon

AbstractA 45 period GaAs/A10.54In0.46P superlattice was grown by molecular beam epitaxy using valved solid-sources to supply both the arsenic (As4) and the phosphorus (P2) group V fluxes. The room temperature optical transmission spectrum shows evidence of ground state excitons. Higher energy confined states are exhibited in photovoltage and photoreflectance spectra. Doublets corresponding to the m≈1 through m≈7 folded longitudinal-acoustic phonon modes are observed in the Raman spectrum. Analysis of these phonon doublets enables the structure of the superlattice to be determined. The interface roughness was found to be approximately 2 monolayers, and the layer thicknesses were determined to be 82 Å GaAs and 48 Å A10.54In0.46P.

Thermo-Optical Properties of Perfluorinated Sulfonic Acid Membranes: An Investigation of Hydration Based on Absorption Spectra

2017 ◽  
Vol 71 (11) ◽  
pp. 2504-2511 ◽  
Author(s):  
Daniele T. Dias ◽  
Guy Lopes ◽  
Tales Ferreira ◽  
Ivanir L. Oliveira ◽  
Caroline D. Rosa
Keyword(s):  
Sulfonic Acid ◽  
Room Temperature ◽  
Water Retention ◽  
Structural Changes ◽  
Optical Characterization ◽  
Scanning Calorimetry ◽  
Experimental Procedure ◽  
Nafion Membranes ◽  
Perfluorinated Sulfonic Acid

The Nafion membranes are widely used in electrochemical applications such as fuel cells, chlor-alkali cells, and actuators–sensors. In this work, the thermal-optical characterization of Nafion in acid form was performed by photoacoustic spectroscopy, thermogravimetry, and differential scanning calorimetry. In the experimental procedure three distinct hydration levels were considered: (1) pristine membrane (λ ≅ H2O/–SO3H ≅ 5.6); (2) swelling process (λ ≅ 17.4); and (3) drying at controlled room temperature after swelling process (λ ≅ 6.5). The discovered behaviors showed significant irreversible structural changes induced by water retention in the membrane. These structural changes depend on the water population present in the clusters and also affect the directional thermal diffusivity of the membrane irreversibly.

L-cysteine functionalized graphene quantum dots for sub-ppb detection of As (III)

2021 ◽  
Author(s):  
Md. Farhan Naseh ◽  
Neelam Singh ◽  
Jamilur R. Ansari ◽  
Ashavani Kumar ◽  
Tapan Sarkar ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Quantum Dots ◽  
Room Temperature ◽  
Graphene Quantum Dots ◽  
Optical Characterization ◽  
Functionalized Graphene ◽  
Transmission Electron ◽  
Sensitivity And Selectivity ◽  
Structural Characterizations

Abstract Here, we report functionalized graphene quantum dots (GQDs) for the optical detection of arsenic at room temperature. GQDs with the fluorescence of three fundamental colors (red, green, and blue) were synthesized and functionally capped with L-cysteine (L-cys) to impart selectively towards As (III) by exploiting the affinity of L-cys towards arsenite. The optical characterization of GQDs was carried out using UV-Vis absorption spectroscopy, Fourier transform infrared spectroscopy, and fluorescence spectrometry and the structural characterizations were performed using transmission electron microscopy. The fluorescence results showed instantaneous quenching in intensity when the GQDs came in contact with As (III) for all test concentrations over a range from 0.025 ppb to 25 ppb, which covers the permissible limit of arsenic in drinking water. The experimental results suggested excellent sensitivity and selectivity towards As (III).

Photoluminescence Characterization of SiGe/Si Quantum-Well Wire Structures

1995 ◽  
Vol 379 ◽  
Author(s):  
S. Nilsson ◽  
H. P. Zeindl ◽  
A. Wolff ◽  
K. Pressel
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Molecular Beam ◽  
Optical Quality ◽  
Photoluminescence Spectra ◽  
Single Quantum Well ◽  
Quantum Well Wire ◽  
Carbon Interstitial

ABSTRACTLow-temperature photoluminescence measurements were performed in order to probe the optical quality of SiGe/Si quantum-well wire structures fabricated by electron-beam lithography and subsequent reactive ion etching, having the patterned polymethylmethacrylate resist as an etch mask. In addition, one set of quantum-well wire structures was post-treated by means of annealing in a hydrogen environment. Our results show that even for the smallest wires of about 100nm in width, the wires exhibit phonon-resolved photoluminescence spectra, similar to that from the molecular beam eptitaxially grown SiGe single quantum well which was used as starting material for the patterning process. After the patterning process a new sharp peak appears in the photoluminescence spectra at 0.97eV in photon energy. Our investigation suggests that this feature is introduced by damage during the patterning process and most probably identical to the G-line, which previously was identified as originating from the dicarbon centre (substitutional carbon-interstitial carbon) in Si. This centre is known to be a very common endproduct of irradiating Si near room temperature which is the case at our patterning process.

MORPHOLOGY CONTROLLING AND OPTICAL CHARACTERIZATION OF ZnO NANOMATERIALS

2006 ◽  
Vol 20 (25n27) ◽  
pp. 3635-3639
Author(s):  
YUZHEN LV ◽  
CHUNPING LI ◽  
PING CHE ◽  
LIN GUO ◽  
HUIBIN XU
Keyword(s):  
Room Temperature ◽  
Optical Characterization ◽  
Visible Emission ◽  
Ultraviolet Emission ◽  
Synthetic Process ◽  
Uv Emission ◽  
Zno Nanomaterials ◽  
Solution Route ◽  
Pl Spectrum

Wurtzite ZnO nanomaterials including nanoparticles, nanocolumns and nanorods were successfully synthesized by a solution route. Concentrations of modifying reagent and differences of solvent employed in the synthetic process can effectively adjust the morphologies of the as-grown products. Photoluminescence measurements of the ZnO nanocolumns and nanorods have been carried out at room temperature. A sharp Ultraviolet emission at 386 nm and a weak visible emission centered at 515 nm were observed in the PL spectrum of the nanocolumns, while a UV emission of the nanorods was observed at 377 nm.

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

STRUCTURAL AND OPTICAL CHARACTERIZATION OF ZnO SINGLE CRYSTALLINE NANOBAMBOOS

2005 ◽  
Vol 19 (15n17) ◽  
pp. 2804-2810 ◽  
Author(s):  
LEI MIAO ◽  
SAKAE TANEMURA ◽  
YASUHIKO HAYASHI ◽  
MASAKI TANEMURA ◽  
RONGPING WANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Annealing Temperature ◽  
Optical Characterization ◽  
Growth Direction ◽  
Annealed Sample ◽  
Green Band ◽  
Post Annealing ◽  
High Resolution Tem ◽  
Post Annealing Temperature

ZnO nanobamboos and nanowires with diameters of 10–30 nm and lengths of 2–4 μm have been prepared by laser ablation in vacuum with precisely controlled pressure, growth and post-annealing temperature. XRD results show the annealed sample is hexagonal ZnO . Low-magnified TEM observation reveals the annealed sample includes ZnO nanobamboos and nanowires. High resolution TEM image and electron diffraction pattern confirm that the structure of ZnO nanobamboo is regular stacking of Zn and O layers with high crystal quality. The growth direction is determined as along [001] direction (c axis). TEM observations confirm that the formation of bamboo-shape ZnO is due to the stacking fault and cleavage. The bundle of those stacking faults seems to be the origin of the black contrast at the nodes. The uniformity of chemical composition for the nanobamboos is identified by EDS profiles. A strong-narrow UV band centred at 390 nm and a weak-broad green band centred at 515 nm are observed at room temperature in the PL spectrum recorded from the annealed ZnO nanobamboos and nanowires.

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