Optical characterization of interface roughness of thin films on transparent substrates

Optical Characterization of Sputter Deposited CdS Thin Films and Measurement of Deposition Rate

2020 IEEE Region 10 Symposium (TENSYMP) ◽

10.1109/tensymp50017.2020.9230706 ◽

2020 ◽

Author(s):

E.M.K. Ikball Ahamed ◽

N.K. Das ◽

S.F.U. Farhad ◽

M.N.I. Khan ◽

M.A. Matin ◽

...

Keyword(s):

Thin Films ◽

Deposition Rate ◽

Optical Characterization ◽

Cds Thin Films ◽

Sputter Deposited

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Structural and Optical Characterization of Zinc Telluride Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.665.254 ◽

2013 ◽

Vol 665 ◽

pp. 254-262 ◽

Cited By ~ 2

Author(s):

J.R. Rathod ◽

Haresh S. Patel ◽

K.D. Patel ◽

V.M. Pathak

Keyword(s):

Thin Films ◽

Extinction Coefficient ◽

Nir Spectroscopy ◽

Optical Characterization ◽

X Ray Diffraction ◽

X Ray ◽

Evaporation Technique ◽

Film Form ◽

Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

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Sol–gel preparation and optical characterization of NiO and Ni1−xZnxO thin films

Journal of Crystal Growth ◽

10.1016/s0022-0248(03)01560-4 ◽

2003 ◽

Vol 258 (3-4) ◽

pp. 380-384 ◽

Cited By ~ 65

Author(s):

Young Ran Park ◽

Kwang Joo Kim

Keyword(s):

Thin Films ◽

Sol Gel ◽

Optical Characterization ◽

Gel Preparation

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Simulation and prediction of optical characterization of casting (Adamantan-Fulgide) thin films using (CTANNs) approach

International Journal of Modern Physics B ◽

10.1142/s0217979219500930 ◽

2019 ◽

Vol 33 (11) ◽

pp. 1950093 ◽

Cited By ~ 1

Author(s):

A. M. A. EL-Barry ◽

D. M. Habashy

Keyword(s):

Experimental Data ◽

Thin Films ◽

Back Propagation ◽

Optical Characterization ◽

Experimental Information ◽

Training Algorithm ◽

Energy Gaps ◽

Resilient Back Propagation ◽

Good Agreement

For reinforcement, the photochromic field and the cooperation between the theoretical and experimental branches of physics, the computational, theoretical artificial neural networks (CTANNs) and the resilient back propagation (R[Formula: see text]) training algorithm were used to model optical characterizations of casting (Admantan-Fulgide) thin films with different concentrations. The simulated values of ANN are in good agreement with the experimental data. The model was also used to predict values, which were not included in the training. The high precision of the model has been constructed. Moreover, the concentration dependence of both the energy gaps and Urbach’s tail were, also tested. The capability of the technique to simulate the experimental information with best accuracy and the foretelling of some concentrations which is not involved in the experimental data recommends it to dominate the modeling technique in casting (Admantan-Fulgide) thin films.

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