High Temperature Silicide Thin-Film Thermocouples

1993 ◽  
Vol 322 ◽  
Author(s):  
Kenneth G. Kreider

AbstractHigh-temperature silicides have been used in mechanical structures, heating elements, and electronic, CMOS applications. Their stability in high temperature oxidizing environments and excellent electrical conductivity may also make them useful as high temperature thin-film sensors in harsh environments. We have investigated sputter deposited MoSi2, ReSi2, TaSi2, TiSi2, and WSi2 thin films and characterized their performance as thermoelements and stability up to 1200 °C. A multilayer technique was developed to ensure constant silicide stoichiometry during oxidation thereby maintaining a constant Seebeck coefficient. In addition techniques were developed to suppress the formation of metal oxides from the silicides. The results indicated excellent stability of Seebeck coefficient up to 1200 °C. These results are compared with the problems of thin film instability in the Seebeck coefficient found in noble metal thermocouples. Potential applications for temperature and heat transfer measurements will be discussed.

1971 ◽  
Vol 14 (7) ◽  
pp. 1025-1027 ◽  
Author(s):  
L. S. Palatnik ◽  
A. F. Bogdanova ◽  
L. S. Grigor'ev ◽  
Ya. I. Kagan ◽  
B. I. Kolesnik ◽  
...  

Author(s):  
Hongseok Choi ◽  
Arindom Datta ◽  
Xiaochun Li

This paper studies the fabrication and calibration of thin film temperature sensors embedded in metal structures. Thin film thermocouples have been successfully fabricated on various metal substrates and advanced embedding techniques have been developed to ensure sensor function inside metal structures. Thin film thermocouple was insulated with multiple thin film layers (Al2O3 and Si3N4) by e-beam evaporating and plasma enhanced chemical vapor deposition (PECVD). The sensors are calibrated. These embedded thin film sensors provide superior spatial and temporal resolution that is not possible with traditional sensors used in various manufacturing processes. This research is significant in a way that it provides a new and improved route for in-situ monitoring of manufacturing process.


2020 ◽  
Vol 91 (7) ◽  
pp. 074901
Author(s):  
Bian Tian ◽  
Yan Liu ◽  
Zhongkai Zhang ◽  
Libo Zhao ◽  
Zhaojun Liu ◽  
...  

Sensors ◽  
2019 ◽  
Vol 19 (15) ◽  
pp. 3414
Author(s):  
Tillmann ◽  
Kokalj ◽  
Stangier ◽  
Schöppner ◽  
Malatyali

Thin film thermocouples are widely used for local temperature determinations of surfaces. However, depending on the environment in which they are used, thin film thermocouples need to be covered by a wear or oxidation resistant top layer. With regard to the utilization in wide-slit nozzles for plastic extrusion, Ni/Ni-20Cr thin film thermocouples were manufactured using direct-current (DC) magnetron sputtering combined with Aluminiumnitride (AlN) and Boron-Carbonitride (BCN) thin films. On the one hand, the deposition parameters of the nitride layers were varied to affect the chemical composition and morphology of the AlN and BCN thin films. On the other hand, the position of the nitride layers (below the thermocouple, above the thermocouple, around the thermocouple) was changed. Both factors were investigated concerning the influence on the Seebeck coefficient and the reaction behaviour of the thermocouples. Therefore, the impact of the nitride thin films on the morphology, physical structure, crystallite size, electrical resistance and hardness of the Ni and Ni-20Cr thin films is analysed. The investigations reveal that the Seebeck coefficient is not affected by the different architectures of the thermocouples. Nevertheless, the reaction time of the thermocouples can be significantly improved by adding a thermal conductive top coat over the thin films, whereas the top coat should have a coarse structure and low nitrogen content.


Sensors ◽  
2019 ◽  
Vol 19 (2) ◽  
pp. 314 ◽  
Author(s):  
Qifu Wang ◽  
Meng Gao ◽  
Lunjia Zhang ◽  
Zhongshan Deng ◽  
Lin Gui

A handy, flexible micro-thermocouple using low-melting-point metal alloys is proposed in this paper. The thermocouple has the advantages of simple fabrication and convenient integration. Bismuth/gallium-based mixed alloys are used as thermocouple materials. To precisely inject the metal alloys to the location of the sensing area, a micro-polydimethylsiloxane post is designed within the sensing area to prevent outflow of the metal alloy to another thermocouple pole during the metal-alloy injection. Experimental results showed that the Seebeck coefficient of this thermocouple reached −10.54 μV/K, which was much higher than the previously reported 0.1 μV/K. The thermocouple was also be bent at 90° more than 200 times without any damage when the mass ratio of the bismuth-based alloy was <60% in the metal-alloy mixture. This technology mitigated the difficulty of depositing traditional thin–film thermocouples on soft substrates. Therefore, the thermocouple demonstrated its potential for use in microfluidic chips, which are usually flexible devices.


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