Micro Thin Film Temperature Sensors Embedded in Metal Structures

2004 ◽  
Author(s):  
Hongseok Choi ◽  
Arindom Datta ◽  
Xiaochun Li
Keyword(s):  
Thin Film ◽  
Chemical Vapor ◽  
Temperature Sensors ◽  
In Situ Monitoring ◽  
Manufacturing Processes ◽  
Metal Structures ◽  
Thin Film Sensors ◽  
Thin Film Thermocouple ◽  
Thin Film Thermocouples

This paper studies the fabrication and calibration of thin film temperature sensors embedded in metal structures. Thin film thermocouples have been successfully fabricated on various metal substrates and advanced embedding techniques have been developed to ensure sensor function inside metal structures. Thin film thermocouple was insulated with multiple thin film layers (Al2O3 and Si3N4) by e-beam evaporating and plasma enhanced chemical vapor deposition (PECVD). The sensors are calibrated. These embedded thin film sensors provide superior spatial and temporal resolution that is not possible with traditional sensors used in various manufacturing processes. This research is significant in a way that it provides a new and improved route for in-situ monitoring of manufacturing process.

scholarly journals Indium Tin Oxide Thin-Film Thermocouple Probe Based on Sapphire Microrod

Sensors ◽  
2020 ◽  
Vol 20 (5) ◽  
pp. 1289 ◽  
Author(s):  
Jinjun Deng ◽  
Linwei Zhang ◽  
Liuan Hui ◽  
Xinhang Jin ◽  
Binghe Ma
Keyword(s):  
Thin Film ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Gas Turbines ◽  
Oxide Thin Film ◽  
Main Challenge ◽  
Thin Film Thermocouple ◽  
Thin Film Thermocouples ◽  
Thermocouple Probe

Indium tin oxide (ITO) thin-film thermocouples monitor the temperature of hot section components in gas turbines. As an in situ measuring technology, the main challenge of a thin-film thermocouple is its installation on complex geometric surfaces. In this study, an ITO thin-film thermocouple probe based on a sapphire microrod was used to access narrow areas. The performance of the probe, i.e., the thermoelectricity and stability, was analyzed. This novel sensor resolves the installation difficulties of thin-film devices.

Development of Cutting Tools with Built-in Thin Film Thermocouple for Monitoring Machining Temperature

2011 ◽  
Vol 189-193 ◽  
pp. 3170-3174
Author(s):  
Qi Yong Zeng ◽  
Xiao Feng Zheng ◽  
Gao Hui Zhang ◽  
Le Chen
Keyword(s):  
Thin Film ◽  
Cubic Boron Nitride ◽  
Cutting Tools ◽  
Vital Role ◽  
Polycrystalline Cubic Boron Nitride ◽  
Thin Film Thermocouple ◽  
Thin Film Thermocouples ◽  
Pcbn Tools ◽  
Deposition Conditions

Temperature plays a vital role in the machining industry today. NiCr/NiSi thin-film thermocouples have been deposited on the rake face of polycrystalline cubic boron nitride (PCBN) tools by magnetron sputtering. The typical deposition conditions are summarized. Static and dynamic calibrations of the NiCr/NiSi thin-film thermocouples are presented. The Seebeck coefficient of the TFTC is 37.3 μV/°C. The response time is about 3.9 ms. The testing results indicate that the developed NiCr/NiSi thin-film thermocouple sensors perform excellently when machining A3 steel in situ.

Study on Embedding and Integration of Microsensors Into Metal Structures for Manufacturing Applications

2006 ◽  
Vol 129 (2) ◽  
pp. 416-424 ◽  
Author(s):  
Xudong Cheng ◽  
Arindom Datta ◽  
Hongseok Choi ◽  
Xugang Zhang ◽  
Xiaochun Li
Keyword(s):  
Thin Film ◽  
Real Time ◽  
Temporal Resolution ◽  
Elevated Temperatures ◽  
Transient Temperature ◽  
Manufacturing Processes ◽  
Metal Structures ◽  
Metal Tooling ◽  
Critical Locations

Real time monitoring, diagnosis, and control of numerous manufacturing processes is of critical importance in reducing operation costs, improving product quality, and shortening response time. Current sensors used in manufacturing are normally unable to provide measurements with desired spatial and temporal resolution at critical locations in metal tooling structures that operate in hostile environments (e.g., elevated temperatures and severe strains). Microsensors are expected to offer tremendous benefits for real time sensing in manufacturing processes. Rapid tooling, a layered manufacturing process, could allow microsensors to be placed at any critical location in metal tooling structures. However, a viable approach is needed to effectively integrate microsensors into metal structures during the process. In this study, a novel batch production of metal embedded microsensor units was realized by transferring thin-film sensors from silicon wafers directly into nickel substrates through standard microfabrication and electroplating techniques. Ultrasonic metal welding (USMW) was studied to obtain optimized process parameters and then used to integrate nickel embedded thin-film thermocouple (TFTC) units into copper workpieces. The embedded TFTCs successfully survived the welding tests, validating that USMW is a viable method to integrate microsensors to metallic tool materials. Moreover, the embedded microsensors were also able to measure the transient temperature in situ at 50μm directly beneath the welding interface during welding. The transient temperatures measured by the metal embedded TFTCs provide strong evidence that the heat generation is not critical for weld formation during USMW. Metal embedded microsensors yield great potential to improve fundamental understanding of numerous manufacturing processes by providing in situ sensing data with high spatial and temporal resolution at critical locations.

In Situ Monitoring of Al Growth in Chemical Vapor Deposition by Detecting Reflected Laser Light Intensity

1995 ◽  
Vol 34 (Part 2, No. 4A) ◽  
pp. L429-L432 ◽  
Author(s):  
Kazumi Sugai ◽  
Hidekazu Okabayashi ◽  
AkikoKobayashi ◽  
Tadaaki Yako ◽  
ShunjiKishida
Keyword(s):  
Chemical Vapor Deposition ◽  
Light Intensity ◽  
Vapor Deposition ◽  
Laser Light ◽  
Chemical Vapor ◽  
In Situ Monitoring

Soft x-ray spectrometer for in situ monitoring of thin-film growth

1994 ◽  
Author(s):  
Per Skytt ◽  
Carl J. Englund ◽  
Nial Wassdahl ◽  
Derrick C. Mancini ◽  
Joseph Nordgren
Keyword(s):  
Thin Film ◽  
Film Growth ◽  
Thin Film Growth ◽  
In Situ Monitoring ◽  
X Ray

scholarly journals In Situ Monitoring of Growth of Vertically Stacked h-BN/Graphene Heterostructures on Ni Substrates and Their Interface Interaction

Surfaces ◽  
2020 ◽  
Vol 3 (3) ◽  
pp. 328-336
Author(s):  
Wei Wei ◽  
Guanhua Zhang ◽  
Jiaqi Pan ◽  
Yi Cui ◽  
Qiang Fu
Keyword(s):  
Hexagonal Boron Nitride ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
High Coverage ◽  
Interface Interaction ◽  
Domain Boundaries ◽  
Potential Applications ◽  
Surface Microscopy ◽  
Mechanical Devices

Vertically stacked hexagonal boron nitride (h-BN)/graphene heterostructures present potential applications in electronic, photonic, and mechanical devices, and their interface interaction is one of the critical factors that affect the performances. In this work, the vertical h-BN/graphene heterostructures with high coverage are synthesized by chemical vapor deposition (CVD) of h-BN on Ni substrates followed by segregation growth of graphene at the h-BN/Ni interfaces, which are monitored by in situ surface microscopy and surface spectroscopy. We find that h-BN overlayers can be decoupled from Ni substrates by the graphene interlayers. Furthermore, the h-BN domain boundaries exhibit a confinement effect on the graphene interlayer growth and the lower graphene domains are limited within the upper h-BN domains. This work provides new insights into the formation mechanism and interface interaction of the vertical heterostructures.

Stress Induced During the Solid-phase Crystallization of Amorphous Silicon Deposited by LPCVD

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Mohammed-Brahim ◽  
K. Kis-Sion ◽  
D. Briand ◽  
M. Sarret ◽  
F. Lebihan ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Solid Phase ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
Pressure Chemical ◽  
Hall Effect Measurements ◽  
Deposition Techniques

AbstractThe Solid Phase Crystallization (SPC) of amorphous silicon films deposited by Low Pressure Chemical Vapor phase Deposition (LPCVD) using pure silane at 550'C was studied by in-situ monitoring the film conductance. The saturation of the conductance at the end of the crystallization process is found transient. The conductance decreases slowly after the onset of the saturation. This degradation is also observed from other analyses such as ellipsometry spectra, optical transmission and Arrhenius plots of the conductivity between 250 and 570K. Hall effect measurements show that the degradation is due to a decrease of the free carrier concentration n and not to a decrease of the mobility. This indicates a constant barrier height at the grain boundaries. The decrease of n is then due to a defect creation in the grain. Hence, whatever the substrate used, an optimum crystallization time exists. It depends on the amorphous quality film which is determined by the deposition techniques and conditions and on the crystallization parameters.

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