Questions And Answers On The Activation Strain

1993 ◽  
Vol 321 ◽  
Author(s):  
Michael J. Aziz
Keyword(s):  
Epitaxial Growth ◽  
Oral Presentation ◽  
Solid Phase ◽  
Strain Tensor ◽  
Solid Phase Epitaxy ◽  
Questions And Answers ◽  
Amorphous Si

ABSTRACTThe activation strain tensor describes the effect of nonhydrostatic stresses on atomic or interfacial Mobilities. It has been measured for solid phase epitaxial growth of crystalline Si (001) into amorphous Si. The activation strain concept is explained and some subtle points are discussed. Implications for proposed mechanisms of solid phase epitaxy are reviewed, and new implications for combined bulk and interfacial control are presented. Questions raised during the oral presentation are answered.

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Process and Mechanism of CoSi2/Si Solid Phase Epitaxy by Multilayer Reaction

1999 ◽  
Vol 580 ◽  
Author(s):  
Bing-Zong Li ◽  
Xin-Ping Qu ◽  
Guo-Ping Ru ◽  
Ning Wang ◽  
Paul Chu
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Initial Stage ◽  
Vital Effect ◽  
Amorphous Si ◽  
Kinetics Of ◽  
State Amorphization

AbstractA multilayer structure of Co/a-Si/Ti/Si(100) together with Co/Ti/Si(100) is applied to investigate the process and mechanism of CoSi2 epitaxial growth on a Si(100) substrate. The experimental results show that by adding an amorphous Si layer with a certain thickness, the epitaxial quality of CoSi2 is significantly improved. A multi-element amorphous layer is formed by a solid state amorphization reaction at the initial stage of the multilayer reaction. This layer acts as a diffusion barrier, which controls the atomic interdiffusion of Co and Si and limits the supply of Co atoms. It has a vital effect on the multilayer reaction kinetics, and the epitaxial growth of CoSi2 on Si. The kinetics of the CoSi2 growth process from multilayer reactions is investigated.

scholarly journals Effect of Nonhydrostatic Stress on Crystal Growth Kinetics

1990 ◽  
Vol 202 ◽  
Author(s):  
Michael J. Aziz ◽  
Paul C. Sabin ◽  
Guo-Quan Lu
Keyword(s):  
Growth Rate ◽  
Transition State ◽  
Epitaxial Growth ◽  
Activation Volume ◽  
Solid Phase ◽  
Strain Tensor ◽  
Solid Phase Epitaxy ◽  
Crystal Growth Kinetics ◽  
Measured Activation ◽  
Amorphous Surface

ABSTRACTThe effect of nonhydrostatic stresses on the solid phase epitaxial growth rate of crystalline Si(100) into self-implanted amorphous surface layers has been measured. Uniaxial stresses of up to 6 kbar (0.6 GPa) were attained by bending wafers over SiO2 rods and annealing at a temperature too low for plastic deformation to relieve the stress in the crystal, but high enough for solid phase epitaxial growth to proceed. The growth rate on the tensile side was greater than that on the compressive side of the wafer, in marked contrast to the enhancement observed from hydrostatic pressure. The phenomenology of an “activation strain”, the nonhydrostatic analogue of the activation volume, has been developed to characterize the results. Combined with the measurement of the activation volume, the measurement reported here permits us to characterize to first order the entire activation strain tensor corresponding to the transition state for solid phase epitaxy of Si(lOO). We conclude that the transition state for this process is “short and fat”; that is, the fluctuation to the transition state involves an expansion in the two in-plane directions and a contraction in the direction normal to the surface large enough to make the overall volume change negative. The symmetry of the measured activation strain tensor is inconsistent with all bulk point defect mechanisms for solid phase epitaxy. The relevance of the activation strain formalism to heteroepitaxy and vapor phase epitaxy is discussed.

Epitaxial growth versus nucleation in amorphous Si doped with Cu and Ag

1993 ◽  
Vol 8 (4) ◽  
pp. 820-829 ◽  
Author(s):  
J.S. Custer ◽  
Michael O. Thompson ◽  
D.J. Eaglesham ◽  
D.C. Jacobson ◽  
J.M. Poate
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Intrinsic Rate ◽  
Amorphous Layer ◽  
Solubility Limit ◽  
Solid Phase Epitaxy ◽  
Metal Impurities ◽  
Random Nucleation ◽  
Si Doped ◽  
Amorphous Si

The competition between solid phase epitaxy and random nucleation in amorphous Si implanted with Cu and Ag has been studied. At low metal concentrations, solid phase epitaxy proceeds with slight deviations from the intrinsic rate, with the impurity segregated and evenly distributed in the amorphous layer. At an impurity concentration of 0.12 at.%, rapid nucleation occurs, transforming the remaining layer into polycrystalline Si. The nucleation rate is ≥108 the intrinsic homogeneous rate. The effects of the metals on epitaxy scale with the amount of metal–Si interaction. Nucleation appears to occur when the metal impurities exceed their absolute solubility limit and begin to phase separate.

Kinetics of solid phase epitaxy in thick amorphous Si layers formed by MeV ion implantation

1990 ◽  
Vol 57 (13) ◽  
pp. 1340-1342 ◽  
Author(s):  
J. A. Roth ◽  
G. L. Olson ◽  
D. C. Jacobson ◽  
J. M. Poate
Keyword(s):  
Ion Implantation ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Kinetics Of

Epitaxial Growth of SixGe1−x Films on Si by Solid Phase Epitaxy.

1984 ◽  
Vol 37 ◽  
Author(s):  
C. S. Pai ◽  
S. S. Lau
Keyword(s):  
Phase Separation ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Metal Layer ◽  
Alloyed Layer ◽  
Quaternary Compounds ◽  
Amorphous Si ◽  
Ion Backscattering

AbstractIt has been demonstrated in the literature that amorphous Si (or Ge) can be transported across a metal layer and grown epitaxially on Si(Ge) single crystal substrates in the solid phase. The objective of this study is to investigate if amorphous SixGe1−x mixtures can be transported uniformly across a medium and grown epitaxially on single crystal substrates without phase separation. The samples were prepared by e-beam evaporation of thin Pd films onto Si<100> substrates, followed by co-evaporation of SixGe1−x alloyed films (0<x<1) without breaking vacuum. The samples were anneaie in vacuum at 300°C to form a Pd silicide-germanide layer at the interface, then at 500°C for transport of the alloyed layer across the Pd silicide-germanide layer and subsequent epitaxial growth on Si substrate. The samples were investigated by x-ray diffraction and by MeV ion backscattering and channeling. The results show the alloyed film transports uniformly with no phase separation detected. The channeling result shows the grown alloyed layer is epitaxial with some Pd trapped in the layer. This simple technique is potentially useful for forming lattice-matched non-alloyed ohmic contacts on III–V ternary and quaternary compounds.

Amorphous‐Si/crystalline‐Si facet formation during Si solid‐phase epitaxy near Si/SiO2 boundary

1984 ◽  
Vol 56 (2) ◽  
pp. 279-285 ◽  
Author(s):  
Yasuo Kunii ◽  
Michiharu Tabe ◽  
Kenji Kajiyama
Keyword(s):  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Facet Formation

Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

1985 ◽  
Vol 46 (3) ◽  
pp. 268-270 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Si ◽  
Si Films

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films
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