Enhancement of lateral solid phase epitaxial growth in evaporated amorphous Si films by phosphorus implantation

1985 ◽  
Vol 46 (3) ◽  
pp. 268-270 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Si ◽  
Si Films

Orientation Dependence of Lateral Solid-Phase-Epitaxial Growth in Amorphous Si Films

1986 ◽  
Vol 25 (Part 1, No. 5) ◽  
pp. 667-672 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Orientation Dependence ◽  
Amorphous Si ◽  
Si Films

On the Mechanisms of Lateral Solid Phase Epitaxial Growth of Amorphous Si Films Evaporated on SiO2Patterns

1985 ◽  
Vol 24 (Part 1, No. 4) ◽  
pp. 411-415 ◽  
Author(s):  
Hiroshi Yamamoto ◽  
Hiroshi Ishiwara ◽  
Seijiro Furukawa
Keyword(s):  
Epitaxial Growth ◽  
Solid Phase ◽  
Amorphous Si ◽  
Si Films

Epitaxial Growth of SixGe1−x Films on Si by Solid Phase Epitaxy.

1984 ◽  
Vol 37 ◽  
Author(s):  
C. S. Pai ◽  
S. S. Lau
Keyword(s):  
Phase Separation ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Ohmic Contacts ◽  
Solid Phase ◽  
Metal Layer ◽  
Alloyed Layer ◽  
Quaternary Compounds ◽  
Amorphous Si ◽  
Ion Backscattering

AbstractIt has been demonstrated in the literature that amorphous Si (or Ge) can be transported across a metal layer and grown epitaxially on Si(Ge) single crystal substrates in the solid phase. The objective of this study is to investigate if amorphous SixGe1−x mixtures can be transported uniformly across a medium and grown epitaxially on single crystal substrates without phase separation. The samples were prepared by e-beam evaporation of thin Pd films onto Si<100> substrates, followed by co-evaporation of SixGe1−x alloyed films (0<x<1) without breaking vacuum. The samples were anneaie in vacuum at 300°C to form a Pd silicide-germanide layer at the interface, then at 500°C for transport of the alloyed layer across the Pd silicide-germanide layer and subsequent epitaxial growth on Si substrate. The samples were investigated by x-ray diffraction and by MeV ion backscattering and channeling. The results show the alloyed film transports uniformly with no phase separation detected. The channeling result shows the grown alloyed layer is epitaxial with some Pd trapped in the layer. This simple technique is potentially useful for forming lattice-matched non-alloyed ohmic contacts on III–V ternary and quaternary compounds.

Lateral Solid Phase Epitaxy of Amorphous Si Films under Ultrahigh Pressure

1992 ◽  
Author(s):  
H. Ishiwara ◽  
H. Wakabayashi ◽  
K. Miyazaki ◽  
K. Fukao ◽  
A. Sawaoka
Keyword(s):  
Solid Phase ◽  
Ultrahigh Pressure ◽  
Solid Phase Epitaxy ◽  
Amorphous Si ◽  
Si Films

Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films

1985 ◽  
Vol 24 (Part 2, No. 7) ◽  
pp. L513-L515 ◽  
Author(s):  
Hiroshi Ishiwara ◽  
Akihiro Tamba ◽  
Hiroshi Yamamoto ◽  
Seijiro Furukawa
Keyword(s):  
Solid Phase ◽  
Boron Doping ◽  
Solid Phase Epitaxy ◽  
Doping Effects ◽  
Amorphous Si ◽  
Si Films

Structural modification of a 7 × 7 superstructure buried at the amorphous Si/Si(111) interface during solid phase epitaxial growth

1991 ◽  
Vol 249 (1-3) ◽  
pp. L300-L306
Author(s):  
Akira Sakai ◽  
Toru Tatsumi ◽  
Ichiro Hirosawa ◽  
Haruhiko Ono ◽  
Koichi Ishida
Keyword(s):  
Epitaxial Growth ◽  
Structural Modification ◽  
Solid Phase ◽  
Amorphous Si

Segregation and Trapping of Erbium in Silicon at a Crystal-Amorphous or Crystal-Vacuum Interface

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
R. Serna ◽  
J. S. Custer ◽  
M. Lohmeier
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Growth Model ◽  
Molecular Beam ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Kinetic Growth ◽  
Vacuum Interface ◽  
Amorphous Si

AbstractThe incorporation of erbium in silicon is studied during solid phase epitaxy (SPE) of Erimplanted amorphous Si on crystalline Si, and during Si molecular beam epitaxy (MBE). Segregation and trapping of Er is observed on Si(100), both during SPE and MBE. The trapping during SPE shows a discontinuous dependence on Er concentration, attributed to the effect of defect trap sites in the amorphous Si near the interface. Trapping during MBE is described by a continuous kinetic growth model. Above a critical Er density (which is lower for MBE than for SPE), growth instabilities occur, attributed to the formation of silicide precipitates. No segregation occurs during MBE on Si(111), attributed to the epitaxial growth of silicide precipitates.

Copper-Enhanced Solid Phase Crystallization of Amorphous Silicon Films

1996 ◽  
Vol 424 ◽  
Author(s):  
Dong Kyun Sohn ◽  
Dae Gyu Moon ◽  
Byung Tae Ahn
Keyword(s):  
Solid Phase ◽  
Copper Ions ◽  
Crystallization Time ◽  
Solid Phase Crystallization ◽  
New Process ◽  
Low Temperature Crystallization ◽  
Amorphous Si ◽  
Si Films ◽  
Fractal Size ◽  
Temperature Crystallization

AbstractLow-temperature crystallization of amorphous Si (a-Si) films was investigated by adsorbing copper ions on the surface of the films. The copper ions were adsorbed by spincoating of Cu solution. This new process lowered the crystallization temperature and reduced crystallization time of a-Si films. For 1000 ppm solution, the a-Si film was partly crystallized down to 500°C in 20 h and almost completely crystallized at 530°C in 20 h. The adsorbed Cu on the surface acted as a seed of crystalline and caused fractal growth. The fractal size was varied from 10 to 200 prm, depending on the Cu concentration in solution. But the grain size of the films was about 400 nm, which was similar to that of intrinsic films crystallized at 600°C.

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