Thermodynamic and Experimental Study of β-FeSi2 Lpcvd

1993 ◽  
Vol 320 ◽  
Author(s):  
Y. Morand ◽  
E. Blanquet ◽  
N. Bourhila ◽  
N. Thomas ◽  
C. Bernard ◽  
...  
Keyword(s):  
Thin Films ◽  
Narrow Range ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Iron Chloride ◽  
Classical Thermodynamic ◽  
Experimental Conditions ◽  
Iron Disilicide ◽  
Deposition Parameters ◽  
Pressure Chemical

ABSTRACTThin films of semiconducting iron sulicide β-FeSi2 have been synthetized by Low Pressure Chemical Vapor Deposition in a cold wall reactor, starting from iron chloride and silane. Optimum experimental conditions for both iron chlorination and iron disilicide deposition have been determined by classical thermodynamic calculations. Despite the narrow range of as predicted deposition parameters, it has been possible to obtain mirror like thin films of pure polycrystalline β-FeSi2 on SiO2 substrate. The structural characteristics of the as deposited layers observed by SEM, ABS and RBS are presented together with their electronic properties.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

scholarly journals Influence of the growth parameters on TiO2 thin films deposited using the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (308) ◽  
pp. 192-198 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Different Temperatures

In this work we report the synthesis of TiO2 thin films by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during the growth in the obtained structural characteristics was studied. Different temperatures of the organometallic bath, deposition time, temperature and type of the substrate were combined. Using Scanning Electron Microscopy associated to Electron Dispersive X-Ray Spectroscopy, Atomic Force Microscopy and X-ray Diffraction, the strong influence of these parameters in the thin films final microstructure was verified.

scholarly journals Low-Pressure Chemical Vapor Deposition of LiCoO[sub 2] Thin Films: A Systematic Investigation of the Deposition Parameters

2009 ◽  
Vol 156 (5) ◽  
pp. D169 ◽  
Author(s):  
J. F. M. Oudenhoven ◽  
T. van Dongen ◽  
R. A. H. Niessen ◽  
M. H. J. M. de Croon ◽  
P. H. L. Notten
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Systematic Investigation ◽  
Deposition Parameters ◽  
Pressure Chemical

A Novel Direct Liquid Injection Low Pressure Chemical Vapor Deposition System (DLI-LPCVD) for the Deposition of Thin Films

2017 ◽  
Vol 19 (8) ◽  
pp. 1700193 ◽  
Author(s):  
Mattias Vervaele ◽  
Bert De Roo ◽  
Jolien Debehets ◽  
Marilyne Sousa ◽  
Luman Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Liquid Injection ◽  
Pressure Chemical ◽  
Direct Liquid Injection

Microbridge Testing of Thin Films Under Small Deformation

1999 ◽  
Vol 594 ◽  
Author(s):  
T. Y. Zhang ◽  
Y. J. Su ◽  
C. F. Qian ◽  
M. H. Zhao ◽  
L. Q. Chen
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Silicon Nitride ◽  
Young’S Modulus ◽  
Young's Modulus ◽  
Chemical Vapor ◽  
Small Deformation ◽  
Nitride Film ◽  
Silicon Nitride Film ◽  
Pressure Chemical

AbstractThe present work proposes a novel microbridge testing method to simultaneously evaluate the Young's modulus, residual stress of thin films under small deformation. Theoretic analysis and finite element calculation are conducted on microbridge deformation to provide a closed formula of deflection versus load, considering both substrate deformation and residual stress in the film. Silicon nitride films fabricated by low pressure chemical vapor deposition on silicon substrates are tested to demonstrate the proposed method. The results show that the Young's modulus and residual stress for the annealed silicon nitride film are respectively 202 GPa and 334.9 MPa.

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