Structural Imperfections in Ulrathin Oxides Grown on Hydrogen Terminated Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
Takeo Hattori ◽  
Kazuaki Ohishi
Keyword(s):  
Photoelectron Spectra ◽  
Silicon Surfaces ◽  
Layer By Layer ◽  
Uniform Layer ◽  
Subsequent Oxidation ◽  
Initial Stage ◽  
Atomically Flat ◽  
Structural Imperfections

ABSTRACTThe initial stage of oxidation of 40wt-% NH4F treated Si(111) surface at 300 °C in dry oxygen with a pressure of 133 Pa and the subsequent oxidation at 600 and 800°C were studied. It was found from the analysis of Si 2p photoelectron spectra that non-uniform layer by layer oxidation proceeds at 300°C, while the layer by layer oxidation proceeds at 600 and 800°C. Furthermore, at these temperatures the interface becomes atomically flat with the progress of oxidation.

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
Y Teramoto ◽  
N. Watanabe
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Interface State ◽  
State Density ◽  
Layer By Layer ◽  
Oxide Film Thickness ◽  
Maximum Value ◽  
State Densities ◽  
Atomically Flat

ABSTRACTThe interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

The Effect of Adsorbeb Oxygen Ions on the Inelastic Scattering of Photo-Electrons at the Metal-Vacuum Interface

1984 ◽  
Vol 41 ◽  
Author(s):  
W. Pong ◽  
D. Brandt ◽  
Z. X. He ◽  
W. Imaino
Keyword(s):  
Inelastic Scattering ◽  
Energy Levels ◽  
Film Deposition ◽  
Photoelectron Spectra ◽  
Aluminum Films ◽  
Vacuum Level ◽  
Oxygen Ions ◽  
Resonant States ◽  
Initial Stage ◽  
Vacuum Interface

AbstractMeasurements of uv photoemission from evaporated aluminum films were made at photon energies 7.7–11 eV as a function of time after film deposition. Evidence of the initial stage of chemisorption of oxygen can be seen in the uv photoelectron spectra. The spectra taken immediately after film deposition showed a smooth energy distribution characteristic of clean aluminum. Structure in the spectra was found to appear at approximately 60 minutes after deposition at 10−9 Torr. Three noticeable features were observed at 1.0, 1.3, and 2.5 eV above the vacuum level. They appeared stationary with increasing photon energy. The structure can be attributed to inelastic scattering of photoelectrons into resonant states associated with oxygen ions on the metal surface. The energy levels of the calculated resonant states of a helium-like system are compared with the energy of the observed structure. The agreement suggests that there are adsorbed 0− ions to which photoelectrons can be scattered at the metal-vacuum interface.

LAYER-BY-LAYER OXIDATION OF SILICON SURFACES BY MOLECULAR AND ATOMIC OXYGEN

APPC 2000 ◽  
2001 ◽  
Author(s):  
Takeo HATTORI ◽  
Kensuke TAKAHASHI ◽  
Hiroshi NOHIRA ◽  
Tadahiro OHMI
Keyword(s):  
Atomic Oxygen ◽  
Silicon Surfaces ◽  
Layer By Layer

scholarly journals Fabrication and Characterization of Antibacterial-active Multilayer Films Based on Keggin Polyoxometalates and Methylene Blue

2010 ◽  
Vol 65 (2) ◽  
pp. 140-146 ◽  
Author(s):  
Dan Chen ◽  
Jun Peng ◽  
Haijun Pang ◽  
Pengpeng Zhang ◽  
Yuan Chen ◽  
...  
Keyword(s):  
Methylene Blue ◽  
Self Assembly ◽  
Multilayer Films ◽  
Photoelectron Spectra ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Assembly Technique ◽  
Lbl Films ◽  
Cv Measurements

Two kinds of multilayer films based on Keggin polyoxometalates α-[SiW12O40]4−/α- [PMo12O40]3− and methylene blue have been prepared via the layer-by-layer (LBL) self-assembly technique. The multilayer films were characterized by UV/Vis spectra, atomic force microscopy (AFM) and X-ray photoelectron spectra (XPS). The cyclic voltammetry (CV) measurements have demonstrated that the electrochemical properties of POMs are maintained in the LBL films. The antibacterial activity of the LBL films has also been investigated, which shows a distinct antibacterial effect against Escherichia coli.

Ultrathin Silicon Dioxide Formation By Ozone On Ultraflat Si Surface

1999 ◽  
Vol 567 ◽  
Author(s):  
A. Kurokawa ◽  
T. Maeda ◽  
K. Sakamoto ◽  
H. Itoh ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Substrate ◽  
Oxide Surface ◽  
Layer By Layer ◽  
High Concentration ◽  
Ozone Oxidation ◽  
Homogeneous Oxidation ◽  
Atomically Flat

ABSTRACTWe prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone-oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

1993 ◽  
Vol 315 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
K. Ohishi ◽  
Y. Shimizu ◽  
Y. Tamura
Keyword(s):  
Silicon Surfaces ◽  
Interface Formation ◽  
Initial Stage

Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO

2003 ◽  
Vol 43 (1A/B) ◽  
pp. L53-L55 ◽  
Author(s):  
Atsushi Kobayashi ◽  
Hiroshi Fujioka ◽  
Jitsuo Ohta ◽  
Masaharu Oshima
Keyword(s):  
Room Temperature ◽  
Layer Growth ◽  
Layer By Layer ◽  
Atomically Flat
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