Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

1993 ◽  
Vol 315 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
K. Ohishi ◽  
Y. Shimizu ◽  
Y. Tamura
Keyword(s):  
Silicon Surfaces ◽  
Interface Formation ◽  
Initial Stage

Initial Stage of SiO2/Si Interface Formation on Hydrogen-Terminated Silicon Surfaces

1995 ◽  
Author(s):  
E. IIJIMA ◽  
T. AIBA ◽  
K. YAMAUCHI ◽  
H. NOHIRA ◽  
N. TATE ◽  
...  
Keyword(s):  
Silicon Surfaces ◽  
Interface Formation ◽  
Initial Stage

Incorporation and Role of Nitrogen During Oxynitridation of Silicon Studied by Photoelectron Spectroscopy

1999 ◽  
Vol 567 ◽  
Author(s):  
Masayuki Suzuki ◽  
Yoji Saito
Keyword(s):  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Oxide Films ◽  
Silicon Surfaces ◽  
Gaseous Mixtures ◽  
X Ray ◽  
Initial Stage ◽  
Thermal Stability Of

ABSTRACTWe tried direct oxynitridation of silicon surfaces by remote-plasma-exited nitrogen and oxygen gaseous mixtures at 700°C in a high vacuum. The oxynitrided surfaces were investigated with in-situ X-ray photoelectron spectroscopy. With increase of the oxynitridation time, the surface density of nitrogen gradually increases, but that of oxygen shows nearly saturation behavior after the rapid increase in the initial stage. We also annealed the grown oxynitride and oxide films to investigate the role of the contained nitrogen. The desorption rate of oxygen from the oxynitride films is much less than that from oxide films. We confirmed that nitrogen stabilizes the thermal stability of these oxynitride films.

Initial stage growth and interface formation of Al on Si(001)2 × 1

1996 ◽  
Vol 365 (2) ◽  
pp. 328-336 ◽  
Author(s):  
H.W. Yeom ◽  
T. Abukawa ◽  
Y. Takakuwa ◽  
M. Nakamura ◽  
M. Kimura ◽  
...  
Keyword(s):  
Interface Formation ◽  
Initial Stage

Initial stage of oxidation of hydrogen-terminated silicon surfaces

1996 ◽  
Vol 104-105 ◽  
pp. 323-328 ◽  
Author(s):  
Takeo Hattori ◽  
Takeshi Aiba ◽  
Etsuo Iijima ◽  
Yohichi Okube ◽  
Hiroshi Nohira ◽  
...  
Keyword(s):  
Silicon Surfaces ◽  
Initial Stage ◽  
Oxidation Of Hydrogen

Photoemission study of the initial stage of Er/Si(100) interface formation

2002 ◽  
Vol 14 (43) ◽  
pp. 10075-10082 ◽  
Author(s):  
Gang Chen ◽  
Xunmin Ding ◽  
Zheshen Li ◽  
Xun Wang
Keyword(s):  
Interface Formation ◽  
Initial Stage ◽  
Photoemission Study

scholarly journals Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy

2007 ◽  
Vol 556-557 ◽  
pp. 525-528 ◽  
Author(s):  
Konstantin V. Emtsev ◽  
Thomas Seyller ◽  
Florian Speck ◽  
Lothar Ley ◽  
P. Stojanov ◽  
...  
Keyword(s):  
Electronic Structure ◽  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
Annealing Temperature ◽  
Core Level ◽  
Interface Formation ◽  
Atomic Arrangement ◽  
Initial Stage ◽  
Graphite Film ◽  
Reconstructed Surface

Graphitization of the 6H-SiC(0001) surface as a function of annealing temperature has been studied by ARPES, high resolution XPS, and LEED. For the initial stage of graphitization – the 6√3 reconstructed surface – we observe σ-bands characteristic of graphitic sp2-bonded carbon. The π-bands are modified by the interaction with the substrate. C1s core level spectra indicate that this layer consists of two inequivalent types of carbon atoms. The next layer of graphite (graphene) formed on top of the 6√3 surface at TA=1250°C-1300°C has an unperturbed electronic structure. Annealing at higher temperatures results in the formation of a multilayer graphite film. It is shown that the atomic arrangement of the interface between graphite and the SiC(0001) surface is practically identical to that of the 6√3 reconstructed layer.

Initial Stage of SiO2/Si Interface Formation on Si(111) Surface

1992 ◽  
Author(s):  
Yoshinari TAMURA ◽  
Kazuaki OHISHI ◽  
Hiroshi NOHIRA ◽  
Takeo HATTORI
Keyword(s):  
Interface Formation ◽  
Initial Stage

Defect generation at silicon surfaces during etching and initial stage of oxidation

1995 ◽  
Vol 28 (1-4) ◽  
pp. 51-54 ◽  
Author(s):  
H. Angermann ◽  
K. Kliefoth ◽  
W. Füssel ◽  
H. Flietner
Keyword(s):  
Silicon Surfaces ◽  
Defect Generation ◽  
Initial Stage

Structural Imperfections in Ulrathin Oxides Grown on Hydrogen Terminated Silicon Surfaces

1993 ◽  
Vol 318 ◽  
Author(s):  
Takeo Hattori ◽  
Kazuaki Ohishi
Keyword(s):  
Photoelectron Spectra ◽  
Silicon Surfaces ◽  
Layer By Layer ◽  
Uniform Layer ◽  
Subsequent Oxidation ◽  
Initial Stage ◽  
Atomically Flat ◽  
Structural Imperfections

ABSTRACTThe initial stage of oxidation of 40wt-% NH4F treated Si(111) surface at 300 °C in dry oxygen with a pressure of 133 Pa and the subsequent oxidation at 600 and 800°C were studied. It was found from the analysis of Si 2p photoelectron spectra that non-uniform layer by layer oxidation proceeds at 300°C, while the layer by layer oxidation proceeds at 600 and 800°C. Furthermore, at these temperatures the interface becomes atomically flat with the progress of oxidation.

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