Ultrathin Silicon Dioxide Formation By Ozone On Ultraflat Si Surface

1999 ◽  
Vol 567 ◽  
Author(s):  
A. Kurokawa ◽  
T. Maeda ◽  
K. Sakamoto ◽  
H. Itoh ◽  
K. Nakamura ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Silicon Substrate ◽  
Oxide Surface ◽  
Layer By Layer ◽  
High Concentration ◽  
Ozone Oxidation ◽  
Homogeneous Oxidation ◽  
Atomically Flat

ABSTRACTWe prepared an atomically flat silicon substrate which had a step-terrace structure and observed the topography of the ozone-oxidized surface to clarify whether homogeneous oxidation occurs with ozone. The oxide was formed with high-concentration ozone gas with a thickness of 2.5nm at a temperature of 350°C. The oxide surface still maintained the same step-terrace structure as observed before oxidation, which revealed that ozone-oxidation occurs layer-by-layer and produces an atomically flat oxide. XPS and MEIS analyses show that the stoichiometry of ozone oxide grown at 350°C is the same as that of an oxide grown thermally at 750°C.

Residual Stress Measurement in Silicon Substrate After Local Thermal Oxidation Using Microscopic Raman Spectroscopy

1991 ◽  
Vol 226 ◽  
Author(s):  
Hideo Miura ◽  
Hiroshi Sakata ◽  
Shinji Sakata Merl
Keyword(s):  
Residual Stress ◽  
Raman Spectroscopy ◽  
Tensile Stress ◽  
Oxide Film ◽  
Film Thickness ◽  
Silicon Dioxide ◽  
Thermal Oxidation ◽  
Silicon Substrate ◽  
Nitride Film ◽  
Oxide Film Thickness

AbstractThe residual stress in silicon substrates after local thermal oxidation is discussed experimentally using microscopic Raman spectroscopy. The stress distribution in the silicon substrate is determined by three main factors: volume expansion of newly grown silicon–dioxide, deflection of the silicon–nitride film used as an oxidation barrier, and mismatch in thermal expansion coefficients between silicon and silicon dioxide.Tensile stress increases with the increase of oxide film thickness near the surface of the silicon substrate under the oxide film without nitride film on it. The tensile stress is sometimes more than 100 MPa. On the other hand, a complicated stress change is observed near the surface of the silicon substrate under the nitride film. The tensile stress increases initially, as it does in the area without nitride film on it. However, it decreases with the increase of oxide film thickness, then the compressive stress increases in the area up to 170 MPa. This stress change is explained by considering the drastic structural change of the oxide film under the nitride film edge during oxidation.

scholarly journals Fabrication of Polyimide Optical Waveguide on Silicon Dioxide Layer Stacked Silicon Substrate

2017 ◽  
Vol 17 (2) ◽  
pp. 36
Author(s):  
Dadin Mahmudin ◽  
Shobih ◽  
Pamungkas Daud ◽  
Yusuf Nur Wijayanto
Keyword(s):  
Silicon Dioxide ◽  
Optical Fibers ◽  
Silicon Substrate ◽  
Optical Waveguides ◽  
Ultra Violet ◽  
Long Distance ◽  
Distance Communication ◽  
Paper Fabrication ◽  
Insertion Losses ◽  
Planar Optical Waveguides

Optical waveguides are important for guiding lightwave from a place to other places. Propagation and insertion losses of the optical waveguides should be considered to be in low values. Recently, optical waveguides with circular structures, which are optical fibers, are used widely for guiding lightwave in long-distance optical communication with very low propagation and insertion losses. Simultaneously, optical waveguides with planar structure are also developed for short distance communication in optical devices. We have reported design and analysis of the planar optical waveguides. In this paper, fabrication of planar optical waveguides using a polyimide material on thin silicon dioxide combined with the silicon substrate is reported. The polyimide material is used for the core of the optical waveguides. The silicon dioxide located on the silicon substrate and the air is used for cladding of the optical waveguides. Fabrication of the optical waveguides such as oxidation, photoresist coating, masking, ultra-violet exposure, and etching was done. The fabricated optical waveguides were characterized physically using a standard microscope and scanning electron microscope (SEM). The fabrication processes and characterization results are reported and discussed in detail.

Planarization of Zinc Oxide Surface and Evaluation of Processing Damage

2011 ◽  
Vol 485 ◽  
pp. 215-218 ◽  
Author(s):  
Hiroki Miyazaki ◽  
Yutaka Adachi ◽  
Isao Sakaguchi ◽  
Takamasa Ishigaki ◽  
Naoki Ohashi
Keyword(s):  
Zinc Oxide ◽  
Flat Surface ◽  
Mechanical Polishing ◽  
Crystalline Quality ◽  
Polished Surface ◽  
Oxide Surface ◽  
High Crystalline Quality ◽  
Atomically Flat

The processes for polishing a ZnO surface were investigated with the aim of establishing a process for obtaining an atomically flat surface with high crystalline quality. The defects in a layer undergoing mechanical polishing were monitored through photoluminescence measurements, and the purity of the polished surface was characterized by SIMS. An atomicallyfishing process.

Detection of Interfaces States Correlated with Layer-by-Layer Oxidation on Si(100)

1999 ◽  
Vol 592 ◽  
Author(s):  
T. Hattori ◽  
H. Nohira ◽  
Y Teramoto ◽  
N. Watanabe
Keyword(s):  
Surface Roughness ◽  
Oxide Film ◽  
Film Thickness ◽  
Interface State ◽  
State Density ◽  
Layer By Layer ◽  
Oxide Film Thickness ◽  
Maximum Value ◽  
State Densities ◽  
Atomically Flat

ABSTRACTThe interface state densities near the midgap were measured with the progress of oxidation of atomically flat Si(100) surface. It was found that the interface state distribution in Si bandgap changes periodically with the progress of oxidation. Namely, the interface-state density near the midgap of Si exhibits drastic decrease at oxide film thickness where the surface roughness of oxide film takes its minimum value, while that does not exhibit decrease at the oxide film thickness where the surface roughness takes its maximum value. In order to minimize interface state densities the oxide film thickness should be precisely controlled to within an accuracy of 0.02 nm.

scholarly journals Deposition of gold nanoparticles from colloid on TiO2 surface

2017 ◽  
Vol 68 (6) ◽  
pp. 487-491
Author(s):  
Vlastimil Rehacek ◽  
Ivan Hotovy
Keyword(s):  
Gold Nanoparticles ◽  
Titanium Dioxide ◽  
Silicon Dioxide ◽  
Coupling Agent ◽  
Oxide Surface ◽  
Tio2 Surface ◽  
Metal Oxide Surface ◽  
Colloidal Gold Nanoparticles ◽  
Titanium Dioxide Surface ◽  
Silicon Silicon

AbstractIn this paper, experimental results are presented on the deposition of colloidal gold nanoparticles on the surfaces of TiO2prepared on silicon/silicon dioxide. Important procedures, such as titanium dioxide surface hydrophilization as well as functionalization by an organosilane coupling agent (3-aminopropyl) trimethoxysilane and (3-mercaptopropyl) trimethoxysilane were investigated in order to obtain a metal oxide surface with the most convenient properties for immobilization of gold nanoparticles having a dense and uniform distribution. TiO2nanotips prepared by reactive ion etching of oxide surface covered with self-mask gold nanoparticles are demonstrated.

Fabrication of thick silicon dioxide sacrificial and isolation blocks in a silicon substrate

2001 ◽  
Vol 12 (1) ◽  
pp. 87-95 ◽  
Author(s):  
Hongrui Jiang ◽  
Kyutae Yoo ◽  
Jer-Liang Andrew Yeh ◽  
Zhihong Li ◽  
Norman C Tien
Keyword(s):  
Silicon Dioxide ◽  
Silicon Substrate

Oxidation of Gallium Nitride Epilayers in Dry Oxygen

1999 ◽  
Vol 595 ◽  
Author(s):  
P. Chen ◽  
R. Zhang ◽  
X.F. Xu ◽  
Z.Z. Chen ◽  
Y.G. Zhou ◽  
...  
Keyword(s):  
Diffusion Mechanism ◽  
Chemical Vapor ◽  
Oxide Surface ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Different Temperatures ◽  
Diffraction Peaks ◽  
And Diffusion

AbstractThe oxidation of GaN epilayers in dry oxygen has been studied. The 1-μm-thick GaN epilayers grown on (0001) sapphire substrates by Rapid-Thermal-Processing/Low Pressure Metalorganic Chemical Vapor Deposition were used in this work. The oxidation of GaN in dry oxygen was performed at various temperatures for different time. The oxide was identified as the monoclinic β-Ga2O3 by a θ-2θ scan X-ray diffraction (XRD). The scanning electron microscope observation shows a rough oxide surface and an expansion of the volume. XRD data also showed that the oxidation of GaN began to occur at 800°C. The GaN diffraction peaks disappeared at 1050°C for 4 h or at 1100°C for 1 h, which indicates that the GaN epilayers has been completely oxidized. From these results, it was found that the oxidation of GaN in dry oxygen was not layer-by-layer and limited by the interfacial reaction and diffusion mechanism at different temperatures.

Structure and Surface Morphology of Thermal SiO2 Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

2017 ◽  
Vol 897 ◽  
pp. 340-343 ◽  
Author(s):  
Atthawut Chanthaphan ◽  
Yoshihito Katsu ◽  
Takuji Hosoi ◽  
Takayoshi Shimura ◽  
Heiji Watanabe
Keyword(s):  
Electrical Properties ◽  
Surface Morphology ◽  
Silicon Dioxide ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Surface Roughening ◽  
Oxide Surface ◽  
Capping Layer ◽  
Enhanced Oxidation

Surface morphology and electrical properties of silicon dioxide (SiO2) on 4H-SiC substrates formed by metal-enhanced oxidation (MEO) using barium (Ba) atoms were systematically investigated. It was found that severe surface roughening caused by Ba-MEO can be suppressed by using SiO2 capping prior to MEO. The Ba atoms at the SiO2/SiC interface were found to diffuse to the oxide surface through the deposited SiO2 capping layer, and then the Ba density reduced to ~1014 cm-2 before stable MEO. The resulting SiO2/SiC interface showed the reduced interface state density but the insulating property of the oxides was significantly degraded.

Deposition of Functionalised Gold Nanoparticles by the Layer-by-Layer Electrostatic Technique

2003 ◽  
Vol 789 ◽  
Author(s):  
S. Paul ◽  
M. Palumbo ◽  
M. C. Petty ◽  
N. Cant ◽  
S. D. Evans
Keyword(s):  
Gold Nanoparticles ◽  
Silicon Substrate ◽  
Coulomb Blockade ◽  
Quantum Mechanical ◽  
Layer By Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Solid Substrates ◽  
Oppositely Charged ◽  
Positively Charged

ABSTRACTIntensive research is currently underway to exploit the intriguing optical and electronic behaviour of nano-sized particles. The basis of the unique properties of these particles is the smallness of their size; dimensions on the nanometre scale can result in interesting quantum mechanical phenomena, such as Coulomb blockade. There are currently a number of ways by which the nanoparticles can be deposited onto solid substrates. Here, we report on the use of the layer-by-layer electrostatic method, which has shown much promise in the context of deposition of thin films of certain organic materials. In this technique, layers of oppositely charged materials are generated by dipping an appropriate substrate into solutions of polyelectrolytes. For example, the polybases poly(ethyleneimine) (PEI), when adsorbed on a substrate, produce a positively charged surface. We have deposited carboxylic acid (-COOH) derivatised gold nanoparticles onto a PEI-coated silicon substrate and an amine funtionalised silicon substrate. The distribution of the gold nanoparticles was compared using atomic force microscopy.

Room Temperature Layer by Layer Growth of GaN on Atomically Flat ZnO

2003 ◽  
Vol 43 (1A/B) ◽  
pp. L53-L55 ◽  
Author(s):  
Atsushi Kobayashi ◽  
Hiroshi Fujioka ◽  
Jitsuo Ohta ◽  
Masaharu Oshima
Keyword(s):  
Room Temperature ◽  
Layer Growth ◽  
Layer By Layer ◽  
Atomically Flat
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