In Situ Studies of Nitridation of Cu/Ti Thin Films Using Environmental Cell in Transmission Electron Microscopy

1993 ◽  
Vol 317 ◽  
Author(s):  
R. Sharma ◽  
Z. Atzmon ◽  
J. Mayer ◽  
S. Q. Hong
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Growth Rate ◽  
Reaction Dynamics ◽  
Nucleation And Growth ◽  
Copper Particles ◽  
Transmission Electron ◽  
Environmental Cell

ABSTRACTCo-deposited Cu/Ti thin films were heated at various temperatures in an ammonia ambient in an environmental cell fitted in to the column of transmission electron Microscope (TEM). The reaction dynamics was observed in situ and recorded on video using a TV camera with 1/30 sec. time resolution. The nitridation of titanium accompanied by nucleation and growth of copper particles started at 370°C. Ti2N formed at lower temperatures while TiN was formed above 400°C. The nucleation of crystals occurred simultaneously (within a Minute) throughout the film indicating no effect of electron beam on reaction process. The growth rate of copper particles was observed to vary slightly from one particle to another indicating varying growth rate for different facets.

Hydrogen Absorption of Palladium Thin Films Observed by in Situ Transmission Electron Microscopy with an Environmental Cell

2016 ◽  
Vol 8 (23) ◽  
pp. 14548-14551 ◽  
Author(s):  
Tengfei Zhang ◽  
Yuki Nakagawa ◽  
Takenobu Wakasugi ◽  
Shigehito Isobe ◽  
Yongming Wang ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Hydrogen Absorption ◽  
Transmission Electron ◽  
Environmental Cell

Epitaxy and texture analysis of Bi-Sr-Ca-Cu-O thin films on (100) MgO using Transmission Electron Microscopy

1990 ◽  
Vol 48 (4) ◽  
pp. 68-69
Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Critical Currents ◽  
Unit Cell ◽  
X Ray Diffraction ◽  
Cell Axis ◽  
Transmission Electron ◽  
Synthesis Procedure

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).

Effects of Dopants on the Nucleation and Growth of NiSi2 on Silicon

1987 ◽  
Vol 94 ◽  
Author(s):  
S. W. Lu ◽  
C. W. Nieh ◽  
J. J. Chu ◽  
L. J. Chen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Low Temperatures ◽  
Nucleation And Growth ◽  
The Other ◽  
Size Factor ◽  
Atomic Size ◽  
Nickel Thin Films ◽  
Transmission Electron

ABSTRACTThe influences of implantation impurities, including BF2, B, F, As and P on the formation of epitaxial NiSi2 in nickel thin films on ion-implanted silicon have been investigated by transmission electron microscopy.The presence of BF2, B, and F atoms was observed to promote the epitaxial growth of NiSi2 at low temperatures. Little or no effect on the formation of NiSi2 was found in samples implanted with As or P ions.The results indicated that the influences of the implantation impurities are not likely to be electronic in origin. Good correlation, on the other hand, was found between the atomic size factor and resulting stress and NiSi2 epitaxy at low temperatures.

Reactions in Metal-Metalloid Multilayers

1993 ◽  
Vol 311 ◽  
Author(s):  
Robert Sinclair ◽  
Toyohiko J. Konno
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Differential Scanning Calorimetry ◽  
Reactive Systems ◽  
Nucleation And Growth ◽  
In Situ Observation ◽  
Scanning Calorimetry ◽  
Compound Formation ◽  
Transmission Electron

ABSTRACTWe have studied the reactions at metal-metalloid interfaces using high resolution transmission electron microscopy, including in situ observation, and differential scanning calorimetry. There is contrasting behavior depending on the affinity for interaction or segregation. For reactive systems, compound formation ultimately results, but this can be preceded by solidstate amorphization. For non-reactive systems, crystallization of the metalloid is often achieved with nucleation and growth mediated by the metal phase.

Visualization of regulated nucleation and growth of lithium sulfides for high energy lithium sulfur batteries

2019 ◽  
Vol 12 (10) ◽  
pp. 3144-3155 ◽  
Author(s):  
Zheng-Long Xu ◽  
Sung Joo Kim ◽  
Donghee Chang ◽  
Kyu-Young Park ◽  
Kyun Seong Dae ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Nucleation And Growth ◽  
Transmission Electron ◽  
Lithium Sulfur Batteries ◽  
Lithium Sulfur

The nucleation and growth of lithium sulfides are directly observed by liquid in situ transmission electron microscopy.

Nucleation and Growth of the First Phase in Sputter-Deposited Nb/Al Multilayer Thin Films

1995 ◽  
Vol 398 ◽  
Author(s):  
K. Barmak ◽  
S. Vivekanand ◽  
F. Ma ◽  
C. Michaelsen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
Nucleation And Growth ◽  
Grain Structure ◽  
Multilayer Thin Films ◽  
Product Phase ◽  
Scanning Calorimetry ◽  
Transmission Electron ◽  
Sputter Deposited

ABSTRACTThe formation of the first phase in the reaction of sputter-deposited Nb/Al multilayer thin films has been studied by power-compensated and heat-flux differential scanning calorimetry, x-ray diffraction and transmission electron microscopy. The modulation periods of the films are in the range of 10-500 nm. Both types of calorimetrie measurements, performed at a constant heating rate, show the presence of two peaks (A and B) for the formation of the single product phase, NbAl3. Isothermal calorimetrie scans show that peak A is associated with a nucleation and growth type transformation. The formation of NbAl3 is thus interpreted as a two-stage process of nucleation and lateral growth to coalescence (peak A) followed by normal growth until the consumption of one or both reactants (peak B). Transmission electron microscopy investigations of samples annealed into the first stage of NbAl3 formation show the presence of this phase at the Nb/Al interface and its preferential growth along the grain boundaries of the Al layer. The latter highlights the role of reactant phase grain structure in product phase formation.

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