Hydrogen Absorption of Palladium Thin Films Observed by in Situ Transmission Electron Microscopy with an Environmental Cell

2016 ◽  
Vol 8 (23) ◽  
pp. 14548-14551 ◽  
Author(s):  
Tengfei Zhang ◽  
Yuki Nakagawa ◽  
Takenobu Wakasugi ◽  
Shigehito Isobe ◽  
Yongming Wang ◽  
...  
1993 ◽  
Vol 317 ◽  
Author(s):  
R. Sharma ◽  
Z. Atzmon ◽  
J. Mayer ◽  
S. Q. Hong

ABSTRACTCo-deposited Cu/Ti thin films were heated at various temperatures in an ammonia ambient in an environmental cell fitted in to the column of transmission electron Microscope (TEM). The reaction dynamics was observed in situ and recorded on video using a TV camera with 1/30 sec. time resolution. The nitridation of titanium accompanied by nucleation and growth of copper particles started at 370°C. Ti2N formed at lower temperatures while TiN was formed above 400°C. The nucleation of crystals occurred simultaneously (within a Minute) throughout the film indicating no effect of electron beam on reaction process. The growth rate of copper particles was observed to vary slightly from one particle to another indicating varying growth rate for different facets.


Author(s):  
J. T. Sizemore ◽  
D. G. Schlom ◽  
Z. J. Chen ◽  
J. N. Eckstein ◽  
I. Bozovic ◽  
...  

Investigators observe large critical currents for superconducting thin films deposited epitaxially on single crystal substrates. The orientation of these films is often characterized by specifying the unit cell axis that is perpendicular to the substrate. This omits specifying the orientation of the other unit cell axes and grain boundary angles between grains of the thin film. Misorientation between grains of YBa2Cu3O7−δ decreases the critical current, even in those films that are c axis oriented. We presume that these results are similar for bismuth based superconductors and report the epitaxial orientations and textures observed in such films.Thin films of nominally Bi2Sr2CaCu2Ox were deposited on MgO using molecular beam epitaxy (MBE). These films were in situ grown (during growth oxygen was incorporated and the films were not oxygen post-annealed) and shuttering was used to encourage c axis growth. Other papers report the details of the synthesis procedure. The films were characterized using x-ray diffraction (XRD) and transmission electron microscopy (TEM).


1993 ◽  
Vol 317 ◽  
Author(s):  
Z. Atzmon ◽  
R. Sharma ◽  
J.W. Mayer ◽  
S.Q. Hong

ABSTRACTNitridation of Cu-Cr alloy films under an NH3 ambient was studied using in situ transmission electron Microscopy. Cu-Cr thin films (40–100 nm) were deposited on a single crystal NaCl substrate by electron beam coevaporation, and were heat treated up to 750°C at 2.5–3.0 Torr NH3. The films were also vacuum (10-6 Torr) annealed under the same conditions for comparison. Initial observation of Cu and Cr crystallization occurred at 470°C for both environmental conditions. The nitridation process of Cr to form CrN was observed initially at 580°C and was followed by evolution of faceted Cu grain growth in the CrN Matrix.


1987 ◽  
Vol 104 ◽  
Author(s):  
J. M. Gibson

ABSTRACTThe growth of the epitaxial silicides NiSi2 and CoSi2 on Si is discussed from observations made by in-situ transmission electron microscopy. In particular, we observe the occurrence of epitaxial metastable phases which arise from the dominance of interface energy in extremely thin films. Such phases relate to the thickness dependence of the microstructure in these silicides and may be expected to occur in many binary and more complex thin film systems.


1987 ◽  
Vol 106 ◽  
Author(s):  
R. Sinclair ◽  
A. H. Carim ◽  
J. Morgiel ◽  
J. C. Bravman

ABSTRACTSome typical microstructural studies of polycrystalline silicon using transmission electron microscopy (TEM) are described, including the application of this material for assisting TEM investigations themselves. Examples include oxidation and realignment of polysilicon thin films, the structure of polysilicon in EEPROM devices, polysilicon in trench capacitors and measurement of SiO2 layer thicknesses with polysilicon overlayers. It is also shown tha grain growth in heavily phosphorus doped polysilicon films can be followed by in situ heating in the TEM.


Nanoscale ◽  
2017 ◽  
Vol 9 (35) ◽  
pp. 12835-12842 ◽  
Author(s):  
C. N. Shyam Kumar ◽  
Venkata Sai Kiran Chakravadhanula ◽  
Adnan Riaz ◽  
Simone Dehm ◽  
Di Wang ◽  
...  

In situ TEM analysis of the thermally induced graphitization and domain growth of free-standing nanocrystalline graphene thin films.


Sign in / Sign up

Export Citation Format

Share Document