In situ high-resolution transmission electron microscopy study of interfacial reactions of Cu thin films on amorphous silicon

2006 ◽  
Vol 88 (8) ◽  
pp. 083117 ◽  
Author(s):  
Sung Bo Lee ◽  
Duck-Kyun Choi ◽  
Fritz Phillipp ◽  
Kyung-Sook Jeon ◽  
Chang Kyung Kim
1993 ◽  
Vol 317 ◽  
Author(s):  
Z. Atzmon ◽  
R. Sharma ◽  
J.W. Mayer ◽  
S.Q. Hong

ABSTRACTNitridation of Cu-Cr alloy films under an NH3 ambient was studied using in situ transmission electron Microscopy. Cu-Cr thin films (40–100 nm) were deposited on a single crystal NaCl substrate by electron beam coevaporation, and were heat treated up to 750°C at 2.5–3.0 Torr NH3. The films were also vacuum (10-6 Torr) annealed under the same conditions for comparison. Initial observation of Cu and Cr crystallization occurred at 470°C for both environmental conditions. The nitridation process of Cr to form CrN was observed initially at 580°C and was followed by evolution of faceted Cu grain growth in the CrN Matrix.


Nanoscale ◽  
2021 ◽  
Vol 13 (15) ◽  
pp. 7362-7374
Author(s):  
R. Podor ◽  
V. Trillaud ◽  
G. I. Nkou Bouala ◽  
N. Dacheux ◽  
C. Ricolleau ◽  
...  

Two-grain systems formed by ThO2 nanospheres are used to study the initial stage of sintering up to 1050 °C using HT-HRTEM. The low temperature crystallite rearrangements as well as grain boundary formation and growth are observed.


Sign in / Sign up

Export Citation Format

Share Document