Element Profiles of Surface Layers Created by Metal Ion Beam Assisted Deposition

1993 ◽  
Vol 316 ◽  
Author(s):  
Sergei M. Duvanov ◽  
Alexander P. Kobzev ◽  
Alexander M. Tolopa
Keyword(s):  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Depth Profiling ◽  
Thin Layers ◽  
Glass Layer ◽  
Hydrogen Atoms ◽  
Surface Layers ◽  
Ion Beam Assisted Deposition ◽  
Metal Metal

ABSTRACTDepth profiles of elements in the surface layers of metals and metallized dielectrics were investigated by Rutherford Backscatteríng Spectrometry (RBS) (for the depth profiling of heavy elements), resonant elastic Backscattering Spectrometry (BS) of 4He+ and 1H+ (for the light elements depth profiling), Elastic Recoil Detection (ERD) of 1H+ (for depth profiling of hydrogen atoms), SIMS and AES techniques. The technological TAMEK source operated in the regime of ion beam assisted deposition (IBAD) of the metal ions (ion implantation at average beam energy ≤ 150 KeV and simultaneous deposition of the same ions at energy 100 eV) in pulse mode. Coatings were deposited on metal and glass samples at temperature of substrates T=100° C. In this report, we discuss the investigation results of samples modified by IBAD in technical vacuum produced by oil diffusion pumping. Phases like TiO, TiC, TiN, TiH are indicated in interface coating-substrate layers. The total thickness of mutually mixed metal-glass layer was found to be 400 nm and it was equal up to 3 µm for metal-metal layers. Cu/Al thin layers on a glass subsrate may be used as mirrors for powerful lasers with large (up to 5 J/cm2) energy contribution.

Composition and Phase Control for Molybdenum Nitride thin Films

1994 ◽  
Vol 354 ◽  
Author(s):  
Mandar S. Mudholkar ◽  
Levi T. Thompson
Keyword(s):  
Thin Films ◽  
Energy Density ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Arrival Rate ◽  
Molybdenum Nitride ◽  
Effective Energy ◽  
Film Composition ◽  
Ion Beam Assisted Deposition ◽  
Molybdenum Nitrides

AbstractMolybdenum nitrides are active and selective hydrodenitrogenation (HDN) catalysts. The catalytic properties of molybdenum nitrides were found to be dependent on the structural properties. The purpose of research described in this paper was to synthesize molybdenum nitride thin films with well defined structures and stoichiometries using ion beam assisted deposition. The films were deposited by evaporating Mo metal, and simultaneously bombarding the growing film with low energy nitrogen ions. The phase constituents of the films were determined using x-ray diffraction and the film composition was obtained by Rutherford backscattering spectrometry.The film composition and phase constituents were strong functions of the ion-to-atom arrival rate ratio, ion energy and ion angle of incidence. Differences in the film composition for different arrival rate ratios and ion angles of incidence were interpreted based on reflection and sputtering effects. Our results suggest that phase formation was governed by the effective energy density per deposited atom. Evaluation of the effective energy density per deposited atom and its physical significance in ion beam assisted deposition is discussed.

Ion Beam Assisted Deposition of TiN Thin Films on Si Substrate

2006 ◽  
Vol 518 ◽  
pp. 155-160
Author(s):  
V. Milinović ◽  
M. Milosavljević ◽  
M. Popović ◽  
M. Novaković ◽  
D. Peruško ◽  
...  
Keyword(s):  
Thin Films ◽  
Partial Pressure ◽  
Rutherford Backscattering Spectrometry ◽  
Incident Angle ◽  
Ion Beam ◽  
Preferred Orientation ◽  
Thin Layers ◽  
Phase Identification ◽  
Ion Energy ◽  
Tin Thin Films

In this paper we present a study of the formation of TiN thin films during the IBAD process. We have analyzed the effects of process parameters such as Ar+ ion energy, ion incident angle, Ti evaporation rates and partial pressure of N2 on preferred orientation and resistivity of TiN layers. TiN thin films were grown by evaporation of Ti in the presence of N2 and simultaneously bombarded with Ar+ ions. Base pressure in the IBAD chamber was 1⋅10-6 mbar. The partial pressure of Ar during deposition was (3.1 – 6.6)⋅10-6 mbar and partial pressure of N2 was 6.0⋅10-6 - 1.1⋅10-5 mbar. The substrates used were Si (100) wafers. TiN thin layers were deposited to a thickness of 85 – 360 nm at deposition rates of Ti from 0.05 to 0.25nm/s. Argon ion energy was varied from 1.5 to 2.0 keV and the angle of ion beam incidence from 0 to 30o. All samples were analyzed by Rutherford backscattering spectrometry (RBS). The changes in concentration profiles of titanium, nitrogen and silicon were determined with 900 keV He++ ion beam. The RBS spectra were analyzed with the demo version of WiNDF code. We have also used X-ray diffraction (XRD) for phase identification. The resistivity of samples was measured with four-point probe method. The results clearly show that TiN thin layer grows with (111) and (200) preferred orientation, depending on the IBAD deposition parameters. Consequently, the formation of TiN thin layers with wellcontrolled crystalline orientation occurs. Also, it was found that the variations in TiN film resistivity could be mainly attributed to the ion beam induced damage during the IBAD process.

Structural and Optical Characterization of Thermally Oxidized Titanium Thin Films Prepared by Ion Beam-assisted Deposition (IBAD) Technique

2021 ◽  
Vol 14 (2) ◽  
pp. 101-109
Keyword(s):  
Thin Films ◽  
Annealing Temperature ◽  
Ion Beam ◽  
Visible Spectrum ◽  
Film Structure ◽  
Thin Layers ◽  
Tio2 Thin Films ◽  
Structure Transition ◽  
Ion Beam Assisted Deposition ◽  
Titanium Thin Films

Abstract: Titanium oxide (TiO2) thin films have been grown by thermal oxidation of sputtered Titanium (Ti) thin layers using ion beam-assisted deposition (IBAD). X-ray diffraction showed that prior to oxidation, the films are composed of hexagonal crystallites of Ti. After oxidation, a film structure transition occurs from monoclinic β-TiO2 type to tetragonal anatase type as the annealing temperature of Ti layer is increased from 250 °C to 550 °C. The film thickness was about 230 nm. Visualization and scanning by atomic force microscope (AFM) revealed a low roughness of the samples, which increases when the annealing temperature is increased. The optical transmittances of the films in the visible spectrum were in the range of 85-95%. The values of optical band gap have been estimated to be 3.43 eV and 3.61 eV, for thin films annealed at 250°C and 550°C, respectively. Keywords: TiO2 thin film, IBAD, XRD, structural and optical properties.

scholarly journals Ion Beam Modification of the Y-Ba-Cu-O System with the Mevva High Current Metal Ion Source

1989 ◽  
Vol 147 ◽  
Author(s):  
I. G. Brown ◽  
M. D. Rubin ◽  
K. M. Yu ◽  
R. Mutikainen ◽  
N. W. Cheung
Keyword(s):  
Ion Implantation ◽  
Metal Ion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Rf Sputtering ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
High Current ◽  
Ion Beam Modification

AbstractWe have used high-dose metal ion implantation to ‘fine tune’ the composition of Y-Ba- Cu-O thin films. The films were prepared by either of two rf sputtering systems. One system uses three modified Varian S-guns capable of sputtering various metal powder targets; the other uses reactive rf magnetron sputtering from a single mixed-oxide stoichiometric solid target. Film thickness was typically in the range 2000–5000 A. Substrates of magnesium oxide, zirconia-buffered silicon, and strontium titanate have been used. Ion implantation was carried out using a metal vapor vacuum arc (MEVVA) high current metal ion source. Beam energy was 100–200 keV, average beam current about 1 mA, and dose up to about 1017 ions/cm2. Samples were annealed at 800 – 900°C in wet oxygen. Film composition was determined using Rutherford Backscattering Spectrometry (RBS), and the resistivity versus temperature curves were obtained using a four-point probe method. We find that the zero-resistance temperature can be greatly increased after implantation and reannealing, and that the ion beam modification technique described here provides a powerful means for optimizing the thin film superconducting properties.

Ion Beam Analysis of Diffusion in Polymer Melts

1984 ◽  
Vol 40 ◽  
Author(s):  
P. F. Green ◽  
P. J. Mills ◽  
C. J. Palmstrom ◽  
J. W. Mayer ◽  
E. J. Kramer
Keyword(s):  
Molecular Weight ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Depth Profiling ◽  
Kirkendall Effect ◽  
Tracer Diffusion ◽  
Polymer Chains ◽  
Self Diffusion ◽  
Beam Depth ◽  
Good Agreement

AbstractTwo ion beam depth profiling methods have been used to measure the diffusion of polymer chains of molecular weight M into a matrix of polymer of molecular weight P. In the first the displacement xm of Au markers at the original interface of a diffusion couple between polystyrene with P=2×107 and a thin film of PS with M<P is measured using Rutherford backscattering spectrometry. From this modern version of the Kirkendall effect we find x=0.4t8(D*t) 0 5, where D* the tracer diffusion coefficient of the M chains at 174°C, is found to be D*=O.007M−2cm2/sec, in good agreement with the D*=DR expected for the reptation mechanism. Forward recoil spectrometry, a technique in which the energies of recoiling deuterons are detected, is used to obtain concentration profiles, and hence D*, of deuterated PS M-chains diffusing into a hydrogenated PS P-chain matrix. When P>>M, D*=0.008M−2, in good agreement with the marker data. When P<P*(M) however D*; increases greatly as P decreases; P* increases slowly with increasing M. The results are predicted quantitatively by D*=DR+DCR, where DCR=0.10Me2/(Mp 3 ) describes the diffusion of the M-chain by release of its topological constraints (by diffusion of the surrounding P-chains) and Me is an entanglement molecular weight. D* for self-diffusion (M=P) is dominated by reptation except for M's close to Me.

MeV Ion Beam Bombardments Effects on the Thermoelectric Properties of Zn4Sb3 / CeFe(4-x)CoxSb12 Nano-Layered Superlattices

2006 ◽  
Vol 974 ◽  
Author(s):  
S. Budak ◽  
C. C. Smith ◽  
B. Zheng ◽  
C. I. Muntele ◽  
R. L. Zimmerman ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Conductivity ◽  
Energy Conversion ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Electrical Energy ◽  
3Ω Method ◽  
Ion Beam Assisted Deposition ◽  
Before And After ◽  
Conductivity Of Thin Films

ABSTRACTWe prepared multilayers of semiconducting half-heusler β-Zn4Sb3 and skutterudites CeFe(4-x)CoxSb12 compound thin films by ion beam assisted deposition (IBAD) system for the application of thermoelectric (TE) materials. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of thin films. The thin films were then bombarded by 5 MeV Si ions for generation of nanodots in the films. We measured the cross-plane thermal conductivity by a house developed 3ω-method system, cross-plane Seebeck coefficient by a (MMR) Seebeck system, and cross plane electrical conductivity of these nanolayered systems by a (MMR) Hall system before and after bombardment. Both β-Zn4Sb3 and CeFe(4-x)CoxSb12 systems have been identified as promising thermoelectric materials for the application of thermal-to-electrical energy conversion. The nanodots produced by MeV ion beam can cause significant change in both electrical and thermal conductivity of thin films, thus improving the efficiency. The MeV ion-beam bombardment resulted in decrease in the thermal conductivity of thin films and increase in the efficiency of thermal-to-electrical energy conversion.

Combination of IBA Techniques for Composition Analysis of GaInAsSb Films

2006 ◽  
Vol 514-516 ◽  
pp. 1603-1607 ◽  
Author(s):  
Victoria Corregidor ◽  
P.C. Chaves ◽  
M.A. Reis ◽  
Carlos Pascual Izarra ◽  
Eduardo Alves ◽  
...  
Keyword(s):  
Elemental Composition ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Grazing Angle ◽  
Growth Conditions ◽  
Thin Layers ◽  
Composition Analysis ◽  
Substrate Orientation ◽  
The Matrix ◽  
Lattice Matched

Quaternary GaInAsSb films alloys were grown by MOVPE technique on GaSb substrates with different growth conditions such as substrate orientation and thickness. The composition of the films determines their bandgap, and also how well they are lattice matched to the substrate. It is thus essential to determine it accurately, which is not a trivial task in this system. The composition of the samples was studied with a combination of Particle Induced Xray Emission (PIXE) and Rutherford Backscattering Spectrometry (RBS) experiments. The RBS experiments were done with a 2 MeV 4He+ or H+ ion beam, according to the thickness of the films, and were used to determine the thickness of the samples. The PIXE experiments were performed at grazing angle conditions and provided accurate elemental composition information. It was found that for thin layers (300 nm) there is a dependence of In incorporation into the matrix according to the substrate orientation, although this tendency was not found for thicker films (24m).

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