Metal Vapour Vacuum Arc Ion Source to Synthesize Refractory Metal Silicides

1993 ◽  
Vol 316 ◽  
Author(s):  
B.X. Liu ◽  
D.H. Zhu ◽  
H.B. Lu ◽  
K. Tao
Keyword(s):  
Current Density ◽  
Refractory Metal ◽  
Metal Ion ◽  
High Current Density ◽  
Ion Source ◽  
Ion Current ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Metal Silicides ◽  
Ion Current Density

ABSTRACTMetal Vapour Vacuum Arc (MEWA) Ion Source was employed, for the first time, to synthesize metal suicides. Refractory metal suicides NbSi2, TaSi2, WSi2 and MoSi2 were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-suicide phases to grow. When the impLantation was conducted at 40 kV, the Nb ion current density was up to 76 µA/cm2 at a dose of 4x1017/cm 2, and the Ta, W and Mo ion current densities were up to 65 µA/cm2 at a dose of 5×1017 ions/cm2 , hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.

Metal Vapour Vacuum Arc Ion Source to Synthesize Refractory Metal Silicides

1993 ◽  
Vol 320 ◽  
Author(s):  
B.X. Liu ◽  
D.H. Zhu ◽  
H.B. Lu ◽  
K. Tao
Keyword(s):  
Current Density ◽  
Refractory Metal ◽  
Metal Ion ◽  
High Current Density ◽  
Ion Source ◽  
Ion Current ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Metal Silicides ◽  
Ion Current Density

ABSTRACTMetal Vapour Vacuum Arc (MEVVA) Ion Source was employed, for the first time, to synthesize metal silicides. Refractory metal silicides NbSi2, TaSi2, WSi2 and MoSi2; were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-silicide phases to grow. When the imp ytation was conducted at 40 kV, the Nb ion current density was up to 76 μA/cm at a dose of 4×1011/cm2, and the Ta, W and Mo ion current densities were up to 65 μA/cm2 at a dose of 5×1017 ions/cm2, hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.

scholarly journals Effect of Ion Current Density on the Properties of Vacuum Arc-Deposited TiN Coatings

2013 ◽  
Vol 41 (12) ◽  
pp. 3640-3644 ◽  
Author(s):  
Oleg O. Baranov ◽  
Jinghua Fang ◽  
Amanda E. Rider ◽  
Shailesh Kumar ◽  
Kostya Ostrikov
Keyword(s):  
Current Density ◽  
Ion Current ◽  
Vacuum Arc ◽  
Tin Coatings ◽  
Ion Current Density

Ion current density profile control of a scalable linear ion source and its application

2006 ◽  
Vol 77 (3) ◽  
pp. 03C107 ◽  
Author(s):  
F. Scholze ◽  
H. Neumann ◽  
M. Tartz ◽  
J. Dienelt ◽  
H. Schlemm
Keyword(s):  
Density Profile ◽  
Current Density ◽  
Ion Source ◽  
Ion Current ◽  
Profile Control ◽  
Current Density Profile ◽  
Ion Current Density

Radiation-induced change of polyimide properties under high-fluence and high ion current density implantation

2004 ◽  
Vol 78 (7) ◽  
pp. 1067-1072 ◽  
Author(s):  
V.N. Popok ◽  
I.I. Azarko ◽  
R.I. Khaibullin ◽  
A.L. Stepanov ◽  
V. Hnatowicz ◽  
...  
Keyword(s):  
Current Density ◽  
Ion Current ◽  
High Fluence ◽  
Radiation Induced ◽  
Ion Current Density

Unified Analysis of the Metal Vapour Arc

1973 ◽  
Vol 28 (3-4) ◽  
pp. 417-428 ◽  
Author(s):  
G. Ecker
Keyword(s):  
Space Charge ◽  
Electron Temperature ◽  
Current Density ◽  
Space Charge Region ◽  
Decisive Role ◽  
Emission Current Density ◽  
Mean Free Path ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Cathode Drop

Abstractfor given values of the total current density j and the cathode spot surface temperature T a unified and consistent calculation of the cathode drop, Uc , the electron temperature in the ionization region T _- the electron emission current density je , the ion current density j+ , and the extension of the space charge region lsp are presented.We find that the counter diffusion of plasma electrons into the space charge region plays a decisive role. It causes an effective space charge region extension lsp of a few plasma electron Debey lengths which in general is much less than the ion mean-free-path commonly used. Without the effect of the counter diffusing electrons, the theoretical results deviate from the experimental data by orders of magnitude.For the example of a Cu metal vapour-or vacuum arc the cathode drop is found to be approximately Uc = 15 [V], the electron temperature about T- =25000 [°K] and the ratio j+/j= 0.5.Since the analysis allows for multiple ionization the presence of multiply charged ions in the spot area can be calculated.The results of this investigation justify within the E-areas the approximations used in the analysis for the copper arc in an earlier investigation 1. Outside these E-areas a recalculation with the new results derived here may cause markable changes.

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