Refractory metal silicides synthesized by metal vapor vacuum arc ion source implantation

1995 ◽  
Vol 77 (8) ◽  
pp. 3690-3696 ◽  
Author(s):  
D. H. Zhu ◽  
B. X. Liu
Keyword(s):  
Refractory Metal ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Metal Silicides

Metal Vapour Vacuum Arc Ion Source to Synthesize Refractory Metal Silicides

1993 ◽  
Vol 316 ◽  
Author(s):  
B.X. Liu ◽  
D.H. Zhu ◽  
H.B. Lu ◽  
K. Tao
Keyword(s):  
Current Density ◽  
Refractory Metal ◽  
Metal Ion ◽  
High Current Density ◽  
Ion Source ◽  
Ion Current ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Metal Silicides ◽  
Ion Current Density

ABSTRACTMetal Vapour Vacuum Arc (MEWA) Ion Source was employed, for the first time, to synthesize metal suicides. Refractory metal suicides NbSi2, TaSi2, WSi2 and MoSi2 were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-suicide phases to grow. When the impLantation was conducted at 40 kV, the Nb ion current density was up to 76 µA/cm2 at a dose of 4x1017/cm 2, and the Ta, W and Mo ion current densities were up to 65 µA/cm2 at a dose of 5×1017 ions/cm2 , hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.

Metal Vapour Vacuum Arc Ion Source to Synthesize Refractory Metal Silicides

1993 ◽  
Vol 320 ◽  
Author(s):  
B.X. Liu ◽  
D.H. Zhu ◽  
H.B. Lu ◽  
K. Tao
Keyword(s):  
Current Density ◽  
Refractory Metal ◽  
Metal Ion ◽  
High Current Density ◽  
Ion Source ◽  
Ion Current ◽  
Vacuum Arc ◽  
Metal Vapour ◽  
Metal Silicides ◽  
Ion Current Density

ABSTRACTMetal Vapour Vacuum Arc (MEVVA) Ion Source was employed, for the first time, to synthesize metal silicides. Refractory metal silicides NbSi2, TaSi2, WSi2 and MoSi2; were successfully formed by implanting respective metal ions into Si(111) wafers. It was found that the high current density metal ion implantation not only provided the metal components but also caused a simultaneous annealing for various metal-silicide phases to grow. When the imp ytation was conducted at 40 kV, the Nb ion current density was up to 76 μA/cm at a dose of 4×1011/cm2, and the Ta, W and Mo ion current densities were up to 65 μA/cm2 at a dose of 5×1017 ions/cm2, hexagonal NbSi2, TaSi2, MoSi2 and WSi2 were formed. Post annealing transformed the WSi2 and MoSi2 phases from hexagonal to tetragonal structure, featuring lower resistance than that of the as-implanted ones.

Performance of a high‐current metal vapor vacuum arc ion source

1990 ◽  
Vol 61 (12) ◽  
pp. 3775-3782 ◽  
Author(s):  
Hiroshi Shiraishi ◽  
Ian G. Brown
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current

Study on the Dopedβ-FeSi 2 Obtained by Metal Vapor Vacuum Arc Ion Source Implantation and Post-Annealing

2002 ◽  
Vol 730 ◽  
Author(s):  
Shuangbao Wang ◽  
Hong Liang ◽  
Peiran Zhu
Keyword(s):  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Post Annealing ◽  
Strong Current ◽  
Xrd Patterns ◽  
Fe Ions

Abstractβ-FeSi2 was firstly formed by implanting Si wafers with Fe ions at 50 kV to a dose of 5×1017/cm2in a strong current Metal Vapor Vacuum Arc (MEVVA) implanter. Secondly, Ti implantation was performed on these Fe as-implanted samples. The Fe + Ti implanted samples were furnace annealed in vacuum at temperatures ranging from 650 to 975°C. The XRD patterns of the annealed samples correspond to β-FeSi2 structure (namely β-Fe(Ti)Si2). When annealing was done above 1050°C, the β-Fe(Ti)Si2 transformed into α-Fe(Ti)Si2. This implies that introducing Ti stabilizes the β-FeSi2 phase. Resistance measurements were also performed.

scholarly journals Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

1991 ◽  
Vol 235 ◽  
Author(s):  
Kin Man Yu ◽  
Ian G. Brown ◽  
Seongil Im
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

Solid Phase Epitaxy of Implanted Si-Ge-C Alloys

1995 ◽  
Vol 388 ◽  
Author(s):  
Xiang Lu ◽  
Nathan W. Cheung
Keyword(s):  
Lattice Mismatch ◽  
Solid Phase ◽  
Metal Vapor ◽  
High Dose Rate ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Dose ◽  
Solid Phase Epitaxy ◽  
Cross Sectional ◽  
Rutherford Back Scattering

AbstractSi1-x-yGexCy/Si heterostuctures were formed on Si (100) surface by Ge and C implantation with a high dose rate MEtal - Vapor Vacuum arc (MEVVA) ion source and subsequent Solid Phase Epitaxy (SPE). after thermal annealing in the temperature range from 600 °C to 1200 °C, the implanted layer was studied using Rutherford Back-scattering Spectrometry (RBS), cross-sectional High Resolution Transmission Electron Microscopy (HRTEM) and fourbounce X-ray Diffraction (XRD) measurement. Due to the small lattice constant and wide bandgap of SiC, the incorporation of C into Si-Ge can provide a complementary material to Si-Ge for bandgap engineering of Si-based heterojunction structure. Polycrystals are formed at temperature at and below 1000 °C thermal growth, while single crystal epitaxial layer is formed at 1100 °C and beyond. XRD measurements near Si (004) peak confirm the compensation of the Si1-x Gex lattice mismatch strain by substitutional C. C implantation is also found to suppress the End of Range (EOR) defect growth.

Electron-beam enhancement of the metal vapor vacuum arc ion source

2002 ◽  
Vol 92 (5) ◽  
pp. 2884-2889 ◽  
Author(s):  
V. A. Batalin ◽  
A. S. Bugaev ◽  
V. I. Gushenets ◽  
A. Hershcovitch ◽  
B. M. Johnson ◽  
...  
Keyword(s):  
Electron Beam ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc

Phase Transformation and Ion Beam Induced Crystallization in SiC Layers Formed by Mevva Implantation of Carbon into Silicon

1997 ◽  
Vol 481 ◽  
Author(s):  
Dihu Chen ◽  
S. P. Wong ◽  
L. C. Ho ◽  
H. Yan ◽  
R.W.M. Kwok
Keyword(s):  
Ion Beam ◽  
Strong Dependence ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
Preparation Conditions ◽  
Random Nucleation ◽  
The One ◽  
Amorphous Sic ◽  
Induced Crystallization

ABSTRACTBuried SiC layers were synthesized by carbon implantation into silicon with a metal vapor vacuum arc ion source under various implantation and annealing conditions. The infrared absorption spectra of these samples were deconvoluted into two or three gaussian components depending on the preparation conditions. One component peaked at around 700 cm-1was assigned to amorphous SiC (a-SiC). The other two components, both peaked at 795 cm-1 but with different values of full width at half maximum (FWHM), were attributed to β-SiC. The one with a larger (smaller) FWHM corresponds to β-SiC of smaller (larger) grains. With this deconvolution scheme, the fraction of various SiC phases in these samples were determined. It was found that for the as-implanted samples there are critical energies and doses at which the crystalline SiC fraction increases abruptly. This was attributed to the ion beam induced crystallization (IBIC) effect. It was also shown that the IBIC effect leads to strong dependence of the β-SiC fraction on the order of implantation for samples synthesized by double-energy implantation. Analysis of the evolution of the β-SiC fraction with annealing time indicated that the crystallization process in these SiC layers could well be described by the classical random nucleation and growth theory.

Pattern Evolution of NiSi2 on Si Surface upon High Current Pulsed Ni Ion Implantation

2000 ◽  
Vol 648 ◽  
Author(s):  
X.Q. Cheng ◽  
H.N. Zhu ◽  
B.X. Liu
Keyword(s):  
Ion Implantation ◽  
Ion Beam ◽  
Fractal Dimensions ◽  
Metal Vapor ◽  
Ion Source ◽  
Vacuum Arc ◽  
High Current ◽  
Si Substrate ◽  
Kinetics Of ◽  
Si Wafer

AbstractFractal pattern evolution of NiSi2 grains on a Si surface was induced by high current pulsed Ni ion implantation into Si wafer using metal vapor vacuum arc ion source. The fractal dimension of the patterns was found to correlate with the temperature rise of the Si substrate caused by the implanting Ni ion beam. With increasing of the substrate temperature, the fractal dimensions were determined to increase from less than 1.64, to beyond the percolation threshold of 1.88, and eventually up to 2.0, corresponding to a uniform layer with fine NiSi2 grains. The growth kinetics of the observed surface fractals was also discussed in terms of a special launching mechanism of the pulsed Ni ion beam into the Si substrate.

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