Effect of Ion-beam Radiation on the Anisotropy of Resistivity in YBa2Cu3O7-δ Thin Films

1993 ◽  
Vol 316 ◽  
Author(s):  
J. Z. Wu ◽  
Z. H. Zhang ◽  
V. W. Chen ◽  
N. Yu ◽  
W. K. Chu
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Point Defects ◽  
Electrical Conduction ◽  
Normal State ◽  
Ion Beam ◽  
Metal Phase ◽  
Normal State Resistivity ◽  
Beam Radiation ◽  
Metal Phase Transition

ABSTRACTDifferent behaviors of the normal-state resistivity have been observed in (110)-, (113)- and a-oriented YBa2Cu3O7-δ thin films under 200 keV H+ irradiation. It suggests that the c-axis electrical conduction is very sensitive to nonoxygen point defects and a ”semiconductor-metal” phase transition could be induced at very low densities of these defects.

Influence of light on the antiferromagnetic-insulator—ferromagnetic-metal phase transition in Pr0.6La0.1Ca0.3MnO3 thin films

2004 ◽  
Vol 30 (12) ◽  
pp. 948-955 ◽  
Author(s):  
P. Aleshkevych ◽  
M. Baran ◽  
R. Szymczak ◽  
H. Szymczak ◽  
V. A. Bedarev ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Ferromagnetic Metal ◽  
Metal Phase ◽  
Metal Phase Transition

scholarly journals Механизм фазового перехода полупроводник-металл в тонких пленках состава Sm-=SUB=-1-x-=/SUB=- Gd-=SUB=-x-=/SUB=-S

2018 ◽  
Vol 52 (1) ◽  
pp. 45
Author(s):  
В.В. Каминский ◽  
С.М. Соловьев ◽  
Г.Д. Хавров ◽  
Н.В. Шаренкова
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Physical Mechanism ◽  
Basic Factor ◽  
Metal Phase ◽  
Film Material ◽  
Flash Evaporation ◽  
Metal Phase Transition ◽  
Semiconductor Properties

AbstractThe influence of the Gd content on the semiconductor–metal phase transition in polycrystalline Sm_1– x Gd_ x S thin films produced by the flash evaporation of a powder in vacuum is studied. It is shown that the basic factor of the physical mechanism of the phase transition is compression of the film material. It is established that the films retain their semiconductor properties only up to a Gd content of x = 0.12.

Experimental Study of the Insulator-to-Metal Phase Transition in VO2 Thin Films in the Microwave Range

2019 ◽  
Vol 10 (4) ◽  
pp. 775-780 ◽  
Author(s):  
D. P. Lelyuk ◽  
A. D. Mishin ◽  
S. S. Maklakov ◽  
A. M. Makarevich ◽  
D. I. Sharovarov
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Experimental Study ◽  
Metal Phase ◽  
Microwave Range ◽  
Metal Phase Transition ◽  
Vo2 Thin Films

Semiconductor-metal Phase Transition in Doped Ion Beam Synthesized VO2 Nanoclusters

2009 ◽  
Vol 1174 ◽  
Author(s):  
Helmut Karl ◽  
J. Dreher ◽  
B. Stritzker
Keyword(s):  
Phase Transition ◽  
Ion Beam ◽  
Metal Phase ◽  
Temperature Dependent ◽  
Spectral Ellipsometry ◽  
Hysteresis Width ◽  
Projected Range ◽  
Annealing Step ◽  
Metal Phase Transition ◽  
Post Implantation

AbstractWe have synthesized W and Mo doped VO2 nanoclusters embedded in 200 nm thick thermally grown SiO2 on 4-inch silicon wafers by sequential ion implantation of the elements V, W, Mo and O. The implantation energies have been chosen to locate the mean projected range in the centre of the SiO2 thin film. A post implantation rapid thermal annealing step in flowing Ar at 1000°C for 10 min leads to the growth of doped VO2 nanoclusters. The optical properties of the nanoclusters were analyzed by temperature dependent spectral ellipsometry in the spectral range of 320 to 1700 nm. It will be shown, that the semiconductor-metal phase transition hysteresis width starting at 50K in the undoped case can be systematically closed by increasing dopand concentration.

scholarly journals Correlation between in situ structural and optical characterization of the semiconductor-to-metal phase transition of VO2 thin films on sapphire

Nanoscale ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 851-863 ◽  
Author(s):  
Tiziana Cesca ◽  
Carlo Scian ◽  
Emilija Petronijevic ◽  
Grigore Leahu ◽  
Roberto Li Voti ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Optical Characterization ◽  
Optical Measurements ◽  
Metal Phase ◽  
Metal Phase Transition ◽  
Vo2 Thin Films

In situ XRD and IR optical measurements demonstrate the coexistence of M1 and R phases during the SMT transition of VO2 thin films.

Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films

2005 ◽  
Vol 87 (5) ◽  
pp. 051910 ◽  
Author(s):  
D. Brassard ◽  
S. Fourmaux ◽  
M. Jean-Jacques ◽  
J. C. Kieffer ◽  
M. A. El Khakani
Keyword(s):  
Thin Films ◽  
Phase Transition ◽  
Grain Size ◽  
Size Effect ◽  
Metal Phase ◽  
Grain Size Effect ◽  
Metal Phase Transition ◽  
Vo2 Thin Films
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