Quantum size effect across semiconductor‐to‐metal phase transition in vanadium dioxide thin films

2015 ◽  
Vol 10 (11) ◽  
pp. 607-612 ◽  
Author(s):  
G.R. Khan ◽  
B.A. Bhat
2005 ◽  
Vol 87 (5) ◽  
pp. 051910 ◽  
Author(s):  
D. Brassard ◽  
S. Fourmaux ◽  
M. Jean-Jacques ◽  
J. C. Kieffer ◽  
M. A. El Khakani

2004 ◽  
Vol 30 (12) ◽  
pp. 948-955 ◽  
Author(s):  
P. Aleshkevych ◽  
M. Baran ◽  
R. Szymczak ◽  
H. Szymczak ◽  
V. A. Bedarev ◽  
...  

1998 ◽  
Vol 47 (11) ◽  
pp. 1896
Author(s):  
YI XIN-JIAN ◽  
LI YI ◽  
HAO JIAN-HUA ◽  
ZHANG XIN-YU ◽  
G.K.WONG

2015 ◽  
Vol 3 (26) ◽  
pp. 6771-6777 ◽  
Author(s):  
Ning Wang ◽  
Shiyu Liu ◽  
X. T. Zeng ◽  
Shlomo Magdassi ◽  
Yi Long

Mg2+ and W6+ cations were first codoped into the VO2 lattice, resulting in a widened photon band gap and h+/e− charge carrier accumulation. These effects enhanced the thermochromic performance with a high visible transmission (∼80%) and a low phase transition temperature (∼30 °C).


2019 ◽  
Vol 53 (6) ◽  
pp. 727-731 ◽  
Author(s):  
E. V. Demidov ◽  
V. M. Grabov ◽  
V. A. Komarov ◽  
A. N. Krushelnitckii ◽  
A. V. Suslov ◽  
...  

2003 ◽  
Vol 785 ◽  
Author(s):  
Lijun Jiang ◽  
William N. Carr

ABSTRACTVanadium dioxide (VO2) thin films were fabricated by e-beam evaporation of vanadium thin films followed by thermal oxidation in oxygen ambient. The properties of the VO2 films were investigated for thermo-optical switching applications. Synthesized VO2 film displays a phase transition at 65 – 68 °C. It exhibits an abrupt change in optical reflectivity over the phase transition temperature range. Results for VO2 on a highly reflective metal layer are strongly dependent on the VO2 thickness. The optical switching has a major hysteresis of about 15 °C between the heating and cooling branches. The evolution of the surface morphology with the oxidation time was studied with a SEM. The VO2 film was patterned on microplatforms by metal lift-off technique. We conclude that the evaporation followed by oxidation is an effective method to produce active VO2 film for thermo-optical switching devices.


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