Optical and Structural Properties of MeV Erbium Implanted LiNbO3

1993 ◽  
Vol 316 ◽  
Author(s):  
M. Fleuster ◽  
CH. Buchal ◽  
E. Snoeks ◽  
A. Polman
Keyword(s):  
Surface Layer ◽  
Single Crystals ◽  
Structural Properties ◽  
Maximum Concentration ◽  
Solid Phase ◽  
Optically Active ◽  
Layer By Layer ◽  
Warm Up

ABSTRACTLiNbO3 single crystals were implanted with Er ions at 3.5 MeV with fluences up to 3*1016 Er/cm2 and subsequently annealed at 1060°C. The warm-up rate of the sample determines whether the implanted, amorphized surface layer recrystallizes via columnar or via layer-by-layer solid phase epitaxial (SPE) growth. The maximum concentration of optically active Er ions is determined to be 0.18 at.%.

Comparative study of the spectral and structural properties of EuAl3(BO3)4 single crystals with different morphologies

2017 ◽  
Vol 59 (12) ◽  
pp. 2423-2429
Author(s):  
T. N. Fursova ◽  
V. V. Kedrov ◽  
O. G. Rybchenko ◽  
S. Z. Shmurak ◽  
E. B. Yakimov ◽  
...  
Keyword(s):  
Comparative Study ◽  
Single Crystals ◽  
Structural Properties

Building Vertical Walls by Deposition of Molten Metal Droplets

2005 ◽  
Author(s):  
M. Fang ◽  
S. Chandra ◽  
C. B. Park
Keyword(s):  
Surface Layer ◽  
Analytical Solution ◽  
Substrate Temperature ◽  
Layer By Layer ◽  
Droplet Temperature ◽  
Droplet Generator ◽  
One Dimensional ◽  
Metallurgical Bonding ◽  
Experimental Parameters ◽  
Vertical Walls

Experiments were conducted to determine conditions under which good metallurgical bonding was achieved in vertical walls composed of multiple layers of droplets that were fabricated by depositing tin droplets layer by layer. Molten tin droplets (0.75 mm diameter) were deposited using a pneumatic droplet generator on an aluminum substrate. The primary parameters varied in experiments were those found to most affect bonding between droplets on different layers: droplet temperature (varied from 250°C to 325°C) and substrate temperature (varied from 100°C to 190°C). Considering the cooling rate of droplet is much faster than the deposition rate previous deposition layer cooled down too much that impinging droplets could only remelt a thin surface layer after impact. Assuming that remelting between impacting droplets and the previous deposition layer is a one-dimensional Stefan problem with phase change an analytical solution can be found and applied to predict the minimum droplet temperature and substrate temperature required for local remelting. It was experimentally confirmed that good bonding at the interface of two adjacent layers could be achieved when the experimental parameters were such that the model predicted remelting.

Effect of B dose and Ge preamorphization energy on the electrical and structural properties of ultrashallow junctions in silicon-on-insulator

2006 ◽  
Vol 912 ◽  
Author(s):  
Justin J Hamilton ◽  
Erik JH Collart ◽  
Benjamin Colombeau ◽  
Massimo Bersani ◽  
Damiano Giubertoni ◽  
...  
Keyword(s):  
Structural Properties ◽  
Solid Phase ◽  
Silicon Film ◽  
Silicon On Insulator ◽  
Bulk Silicon ◽  
Defect Band ◽  
Future Technology ◽  
Ultrashallow Junctions ◽  
P Type ◽  
Technology Nodes

AbstractFormation of highly activated, ultra-shallow and abrupt profiles is a key requirement for the next generations of CMOS devices, particularly for source-drain extensions. For p-type dopant implants (boron), a promising method of increasing junction abruptness is to use Ge preamorphizing implants prior to ultra-low energy B implantation and solid-phase epitaxy regrowth to re-crystallize the amorphous Si. However, for future technology nodes, new issues arise when bulk silicon is supplanted by silicon-on-insulator (SOI). Previous results have shown that the buried Si/SiO2 interface can improve dopant activation, but the effect depends on the detailed preamorphization conditions and further optimization is required. In this paper a range of B doses and Ge energies have been chosen in order to situate the end-of-range (EOR) defect band at various distances from the back interface of the active silicon film (the interface with the buried oxide), in order to explore and optimize further the effect of the interface on dopant behavior. Electrical and structural properties were measured by Hall Effect and SIMS techniques. The results show that the boron deactivates less in SOI material than in bulk silicon, and crucially, that the effect increases as the distance from the EOR defect band to the back interface is decreased. For the closest distances, an increase in junction steepness is also observed, even though the B is located close to the top surface, and thus far from the back interface. The position of the EOR defect band shows the strongest influence for lower B doses.

scholarly journals Mn Effect on Nonlinear and Structural Properties of <110> Oriented PZN-4.5PT Single Crystals

2012 ◽  
Vol 03 (05) ◽  
pp. 404-411 ◽  
Author(s):  
Diouma Kobor ◽  
Modou Tine ◽  
Abdelowahed Hajjaji ◽  
Laurent Lebrun ◽  
Daniel Guyomar
Keyword(s):  
Single Crystals ◽  
Structural Properties

scholarly journals Synthesis and Structural Properties of Nanocomposites Based on Synthetic Opals and Active Dielectrics

2019 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Bilal Abu Sal
Keyword(s):  
Raman Spectroscopy ◽  
Single Crystals ◽  
Structural Properties ◽  
Raman Spectra ◽  
Phase Structure ◽  
Opal Matrix ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal State ◽  
Synthetic Opals

This work is devoted to generalize and analyze the previouse results of new photonic-crystalline nanomaterials based on synthetic opals and active dielectrics. Data were characterized by X-ray diffraction and Raman spectroscopy. Active dielectrics infiltrated into the pores of the opal from the melt. The phase structure composition of the infiltrated materials into the pores of the opal matrix were analyzed. The results of x-ray diffraction and Raman spectra allowed to establish the crystal state of active dielectrics in the pores of the opal. The Raman spectra of some opal-active dielectric nanocomposites revealed new bands and changes in band intensities compared to the spectra of single crystals of active dielectrics. Further more, differences in band intensities in the spectra were measured at different spots of the sample&lsquo;s surface were observed. The revealed changes were attributed to the formation of new crystalline phases due to the injected dielectrics in opal pores.

Improvement of Surface Layer Formation Technology for Articles Produced by Layer-by-Layer Laser Sintering

2013 ◽  
Vol 379 ◽  
pp. 56-59 ◽  
Author(s):  
N.A. Saprykina ◽  
A.A. Saprykin
Keyword(s):  
Surface Layer ◽  
Powder Material ◽  
Copper Powder ◽  
Manufacturing Process ◽  
Laser Sintering ◽  
Layer By Layer ◽  
Layer Formation ◽  
Mathematical Relation ◽  
Surface Layer Formation

Mathematical relation between roughness of the surface layer of the sintered article and layer-by-layer laser sintering modes obtained from experiments conducted using copper powder material PMS-1. Authors suggest that split manufacturing process of an article and its inner part must be split to roughing, semi-finishing and finishing modes.

IN-PLANE AND OUT OF PLANE RESISTIVITIES IN BSCCO (2212) SINGLE CRYSTALS AT DIFFERENT DOPING LEVEL

2003 ◽  
Vol 17 (04n06) ◽  
pp. 867-872 ◽  
Author(s):  
R. FASTAMPA ◽  
M. GIURA ◽  
S. SARTI ◽  
R. MARCON ◽  
E. SILVA
Keyword(s):  
Surface Layer ◽  
Single Crystals ◽  
Doping Level ◽  
Current Voltage ◽  
Out Of Plane

Using an eight terminal geometry in standard current/voltage contact configurations we have determined both the out-of-plane and the in-plane d.c. resistivity in BSCCO(2212) samples at different doping level. Comparison of the temperature behaviors for these transport quantities highlights that use of these configurations results in incorrect determinations for the in-plane components. Exploiting the possibility of crossed comparisons when using a multi-terminal technique we are able to ascribe this effect at presence on the sample of surface layer with oxygen contents different from the bulk.

Sign in / Sign up

Export Citation Format

Share Document