scholarly journals Mn Effect on Nonlinear and Structural Properties of <110> Oriented PZN-4.5PT Single Crystals

2012 ◽  
Vol 03 (05) ◽  
pp. 404-411 ◽  
Author(s):  
Diouma Kobor ◽  
Modou Tine ◽  
Abdelowahed Hajjaji ◽  
Laurent Lebrun ◽  
Daniel Guyomar
2017 ◽  
Vol 59 (12) ◽  
pp. 2423-2429
Author(s):  
T. N. Fursova ◽  
V. V. Kedrov ◽  
O. G. Rybchenko ◽  
S. Z. Shmurak ◽  
E. B. Yakimov ◽  
...  

2019 ◽  
Vol 12 (1) ◽  
pp. 19
Author(s):  
Bilal Abu Sal

This work is devoted to generalize and analyze the previouse results of new photonic-crystalline nanomaterials based on synthetic opals and active dielectrics. Data were characterized by X-ray diffraction and Raman spectroscopy. Active dielectrics infiltrated into the pores of the opal from the melt. The phase structure composition of the infiltrated materials into the pores of the opal matrix were analyzed. The results of x-ray diffraction and Raman spectra allowed to establish the crystal state of active dielectrics in the pores of the opal. The Raman spectra of some opal-active dielectric nanocomposites revealed new bands and changes in band intensities compared to the spectra of single crystals of active dielectrics. Further more, differences in band intensities in the spectra were measured at different spots of the sample&lsquo;s surface were observed. The revealed changes were attributed to the formation of new crystalline phases due to the injected dielectrics in opal pores.


1977 ◽  
Vol 55 (7) ◽  
pp. 1242-1250 ◽  
Author(s):  
M. H. Brooker

Raman spectra of oriented single crystals of KNO3(II) have been recorded at 298 and 77 K. At both temperatures the data are in excellent agreement with the factor group analysis based on the generally accepted Pmcn space group. Additional spectral features observed near room temperature suggest the presence of a significant number of disordered nitrate groups on alternate lattice sites, although the majority of nitrate groups occupy the ordered sites. As the temperature is lowered, the disordered groups freeze out until near the temperature of reported electrical anomalies (213 K) only the ordered sites are occupied. Improved resolution has resulted in detection of a number of new spectral features while improved depolarization data have resulted in reassignment of several peaks.


1993 ◽  
Vol 316 ◽  
Author(s):  
M. Fleuster ◽  
CH. Buchal ◽  
E. Snoeks ◽  
A. Polman

ABSTRACTLiNbO3 single crystals were implanted with Er ions at 3.5 MeV with fluences up to 3*1016 Er/cm2 and subsequently annealed at 1060°C. The warm-up rate of the sample determines whether the implanted, amorphized surface layer recrystallizes via columnar or via layer-by-layer solid phase epitaxial (SPE) growth. The maximum concentration of optically active Er ions is determined to be 0.18 at.%.


2018 ◽  
Vol 80 ◽  
pp. 137-142 ◽  
Author(s):  
Chetan K. Zankat ◽  
Pratik Pataniya ◽  
G.K. Solanki ◽  
K.D. Patel ◽  
V.M. Pathak ◽  
...  

2021 ◽  
Vol 22 (3) ◽  
pp. 437-443
Author(s):  
Yu.V. Pavlovskyy ◽  
O.V. Berbets ◽  
P.G. Lytovchenko

The influence of growth impurities (oxygen and carbon) on the thermalsdefect formation in silicon single crystals has been studied. Annealing was carried out in the temperature range 700-1100°C in steps of 50°C for 5 hours at each temperature. The magnetic, micromechanical and structural properties of annealed silicon single crystals have been experimentally studied. The distribution of defects formed at different annealing temperatures has been studied. The correlation between changes of magnetic susceptibility, microhardness and rearrangement of structural defects in crystals after their heat treatment is revealed. Concentrations and sizes of magnetically ordered clusters are estimated. Interpretation of the obtained experimental results is offered.


1984 ◽  
Vol 67 (2) ◽  
pp. 195-201 ◽  
Author(s):  
U. Elrod ◽  
M. Lux-Steiner ◽  
E. Bucher ◽  
J. Hönigschmid ◽  
K. Bickmann ◽  
...  

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