Helium Ion Beam Induced Arsenic Atom Displacement Studied by Medium-Energy Ion Spectroscopy

1993 ◽  
Vol 316 ◽  
Author(s):  
Shin Yokoyama ◽  
Zbigniew J. Radzimski ◽  
Kensaku Ishibashi ◽  
Takeshi Watanabe ◽  
Masataka Hirose
Keyword(s):  
Low Dose ◽  
Ion Beam ◽  
High Dose ◽  
Medium Energy ◽  
Arsenic Atom ◽  
Ion Beam Irradiation ◽  
Nuclear Stopping ◽  
Ion Spectroscopy ◽  
Helium Ion ◽  
Atom Displacement

ABSTRACTAn arsenic atom displacement in As+ ion implanted Si induced by He+ ion beam irradiation has been studied by medium-energy (175keV) ion spectroscopy (MEIS). The He+ energy and dose dependences of the displaced arsenic atoms have been examined in the range of 30-175keV and ≤6×10-4C/cm2, respectively. The amount of the displaced arsenic atoms are found to be proportional to the dose and inversely proportional to the nuclear stopping power in the low-dose region, while it saturates at high-dose region. The dose-proportional region is composed of two different proportional coefficient segments.

MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation

ACS Nano ◽  
2019 ◽  
Vol 13 (12) ◽  
pp. 14262-14273 ◽  
Author(s):  
Jakub Jadwiszczak ◽  
Darragh Keane ◽  
Pierce Maguire ◽  
Conor P. Cullen ◽  
Yangbo Zhou ◽  
...  
Keyword(s):  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Helium Ion

scholarly journals Josephson Junctions and SQUIDs Created by Focused Helium-Ion-Beam Irradiation of YBa2Cu3O7

2019 ◽  
Vol 11 (4) ◽  
Author(s):  
B. Müller ◽  
M. Karrer ◽  
F. Limberger ◽  
M. Becker ◽  
B. Schröppel ◽  
...  
Keyword(s):  
Josephson Junctions ◽  
Ion Beam ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Helium Ion

Ion Beam Mixing and Thermal Demixing of Co/Cu Multilayers

1997 ◽  
Vol 504 ◽  
Author(s):  
M. Cai ◽  
T. Veres ◽  
R. W. Cochrane ◽  
S. Roorda ◽  
R. Abdouche ◽  
...  
Keyword(s):  
Thermal Annealing ◽  
Giant Magnetoresistance ◽  
Low Dose ◽  
Ion Beam ◽  
Ion Bombardment ◽  
Ex Situ ◽  
Ion Beam Irradiation ◽  
X Ray ◽  
Interlayer Structure ◽  
Subsequent Thermal Annealing

ABSTRACTX-ray reflectivity and magnetotransport studies have been used to probe the effects of ion-beam irradiation and subsequent thermal annealing on the structure and giant magnetoresistance (GMR) in Co/Cu multilayers. Low-dose ion bombardment produces interfacial mixing which is accompanied by a systematic suppression of the anti ferromagnetic (AF) coupling and the GMR. For ion doses not exceeding 5 × 1014 ions/cm2, subsequent thermal annealing restores the abrupt interlayer structure as well as the GMR. The combination of low-dose ion bombardment and thermal annealing provides an ex situ technique to modify interface structure reversibly over a gnificant range.

The Effect of Thermal Spike on the Ion Irradiation Induced Grain Growth

1991 ◽  
Vol 235 ◽  
Author(s):  
K. H. Chae ◽  
J. H. Song ◽  
J. H. Joo ◽  
J. J. Woo ◽  
C. N. Whang ◽  
...  
Keyword(s):  
Grain Growth ◽  
Low Dose ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Heat Of Mixing ◽  
High Dose ◽  
Thermal Spike ◽  
Close Relationship ◽  
Basic Parameters ◽  
Good Agreement

ABSTRACTThe relation between the ion irradiation induced grain growth in bilayer system and the basic parameters involved in ion beam mixing process was studied. TEM micrographs showed that a significant grain growth has been induced by Ar+ irradiation at room temperature. The grain size increases rapidly in low dose region, while it approaches a saturated value in high dose region, and it has close relationship with thermodynamic properties such as cohesive energy ( ΔHc ) and heat of mixing( ΔHm ). The experimental results are in good agreement with the model for the grain growth based on the thermal spike induced atomic migration.

Radiation-Induced Nanostructures in an Iron Phosphate Glass

2003 ◽  
Vol 792 ◽  
Author(s):  
K. Sun ◽  
T. Ding ◽  
L.M. Wang ◽  
R.C. Ewing
Keyword(s):  
Phosphate Glass ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Dose Range ◽  
Iron Phosphate ◽  
High Energy ◽  
High Dose ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Feo Nanoparticles

ABSTRACTElectron and ion irradiation-induced nanostructures in an iron phosphate glass with a composition of 45 mol%Fe2O3-55 mol%P2O5 have been characterized by advanced electron microbeam techniques. Analysis by energy-filtered transmission electron microscopy indicated that Fe-rich and P-rich nanophases were formed when the glass was irradiated under a broad (with a diameter of 1.2μm) electron beam [give the dose range]. Phase separation developed with the increase in electron dose (from 1.0×1026e/m2 to 4.8×1026e/m2) as a result of the formation of an Fe-rich phase and pure P-phase. The formation of the Fe-rich and the P-phases are thought to be due to mainly ionization process. Under a low energy ion beam irradiation, Fe/FeO nanoparticles were formed, as confirmed by selected-area electron diffraction analysis. However, no nanoparticles were observed under a high-energy high-dose ion irradiation. The ion beam-irradiation results suggest that the formation of the Fe/FeO nanoparticles was due to preferential sputtering during ion irradiation and that the nanoparticles lie within the surface layers of the glass.

scholarly journals Nano-structuring, surface and bulk modification with a focused helium ion beam

2012 ◽  
Vol 3 ◽  
pp. 579-585 ◽  
Author(s):  
Daniel Fox ◽  
Yanhui Chen ◽  
Colm C Faulkner ◽  
Hongzhou Zhang
Keyword(s):  
Ion Irradiation ◽  
Ion Beam ◽  
High Dose ◽  
Modification Process ◽  
Dose Irradiation ◽  
Probe Size ◽  
Helium Ion ◽  
High Incidence ◽  
High Level ◽  
Irradiation Process

We investigate the ability of a focused helium ion beam to selectively modify and mill materials. The sub nanometer probe size of the helium ion microscope used provides lateral control not previously available for helium ion irradiation experiments. At high incidence angles the helium ions were found to remove surface material from a silicon lamella leaving the subsurface structure intact for further analysis. Surface roughness and contaminants were both reduced by the irradiation process. Fabrication is also realized with a high level of patterning acuity. Implantation of helium beneath the surface of the sample is visualized in cross section allowing direct observation of the extended effects of high dose irradiation. The effect of the irradiation on the crystal structure of the material is presented. Applications of the sample modification process are presented and further prospects discussed.

Hydrogen migration in wet-thermally grown silicon dioxide layers due to high dose 15N ion beam irradiation

1999 ◽  
Vol 48 (1-4) ◽  
pp. 139-142 ◽  
Author(s):  
K. Maser ◽  
U. Mohr ◽  
R. Leihkauf ◽  
K. Ecker ◽  
U. Beck ◽  
...  
Keyword(s):  
Silicon Dioxide ◽  
Ion Beam ◽  
High Dose ◽  
Beam Irradiation ◽  
Ion Beam Irradiation ◽  
Hydrogen Migration ◽  
Thermally Grown
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