Effects of Hyperthermal Carbon Subimplantation Doping on the Raman Spectra of Gaas

1993 ◽  
Vol 316 ◽  
Author(s):  
P. Fons ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Tsutomu Iida ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Film Growth ◽  
Low Energy ◽  
Mbe Growth ◽  
Peak Broadening ◽  
Transmission Electron ◽  
Ion Energies ◽  
Ion Doping ◽  
Residual Damage ◽  
Good Acceptor ◽  
Very High

ABSTRACTThe structural effects of low-energy (30-500 eV), mass separated C12 Ion doping of GaAs simultaneous with conventional solid source MBE growth have been studied using room-temperature raman scattering, Hall-effect, transmission electron microscopy and 2K photoluminesence measurements for GaAs epitaxy temperatures of 550 ºC. Results indicate good acceptor activation without detectable residual damage is achieved for ion energies ≤ 240 eV, while at EIon = 500 eV, residual damage is present with a corresponding reduction in electrical activation. Low-energy TRIM calculations indicate that the damage is related to the increased depth distribution of vacancies and interstitials created during the higher (500 eV) implantation process which can not be annealed out at growth temperatures. Constant energy (100 eV) film growth experiments for a range of implantation currents (45 pA/cm2 - 45 nA/cm2) and growth temperatures of 550 and 550 ºC, show LO Raman peak broadening and mode hardening for currents ≥15 nA while maintaining very high C acceptor activation. This is interpreted as residual stress due to small amounts of interstitial C in the highest doped films. Both Hall mobility measurements and photoluminesence show no evidence of C dopant compensation.

Simulations of Low-Energy Ion/Surface Interaction Effects During Epitaxial Film Growth.

1991 ◽  
Vol 223 ◽  
Author(s):  
Makoto Kitabatake ◽  
J. E. Greene
Keyword(s):  
Film Growth ◽  
Low Energy ◽  
Many Body ◽  
Energy Redistribution ◽  
Mbe Growth ◽  
Lattice Atom ◽  
Site Exchange ◽  
Dynamics Simulations ◽  
Body Potential ◽  
Epitaxial Film Growth

ABSTRACTMolecular dynamics simulations were used to follow low-energy ion/surface interactions including kinetic energy redistribution in the lattice as a function of time, projectile and lattice atom trajectories, and the nature, number, and depth of residual defects. The simulations were carried out using the Tersoff many-body potential for Si. Irradiation events were initiated with 10 and 50 eV Si atoms incident normal to the Si(001)2×l surface at an array of points in the primitive surface unit cell. Ion-induced epitaxial growth was observed due to both Si projectiles and Si lattice atoms coming to rest at epitaxial positions through direct deposition as well as site exchange occurring via diffusional and collisional processes. 36 simulations of 10 eV (50 eV) Si bombardment resulted in an average stopping position of 0.5 Å (1.6 Å) below the surface, 10 (13) epitaxial events, 7 (24) exchange events between the projectile and a lattice atom, and the formation of 15 (63) interstitials and 0 (36) vacancies. The interstitials preferentially diffuse toward the surface and are annealed out over times corresponding to monolayer deposition at typical Si MBE growth temperatures.

Reduction of Specimen Contamination in Electron-Beam Instruments

1976 ◽  
Vol 34 ◽  
pp. 576-577
Author(s):  
G. Lehmpfuhl ◽  
P. J. Smith
Keyword(s):  
Electron Beam ◽  
Cold Trap ◽  
Beam Diameter ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Hydrocarbon Molecules ◽  
Electron Microscopes ◽  
Combination Of Methods ◽  
Convergent Beam ◽  
Very High

Specimens being observed with electron-beam instruments are subject to contamination, which is due to polymerization of hydrocarbon molecules by the beam. This effect becomes more important as the size of the beam is reduced. In convergent-beam studies with a beam diameter of 100 Å, contamination was observed to grow on samples at very high rates. Within a few seconds needles began forming under the beam on both the top and the underside of the sample, at growth rates of 400-500 Å/s, severely limiting the time available for observation. Such contamination could cause serious difficulty in examining a sample with the new scanning transmission electron microscopes, in which the beam is focused to a few angstroms.We have been able to reduce the rate of contamination buildup by a combination of methods: placing an anticontamination cold trap in the sample region, preheating the sample before observation, and irradiating the sample with a large beam before observing it with a small beam.

The annealed (0001) α-alumina surface and its influence on thin-film growth

1995 ◽  
Vol 53 ◽  
pp. 336-337
Author(s):  
Michael W. Bench ◽  
Paul G. Kotula ◽  
C. Barry Carter
Keyword(s):  
Electron Microscopy ◽  
Surface Energy ◽  
Film Growth ◽  
Thin Film Growth ◽  
Energy Calculations ◽  
Transmission Electron ◽  
Reflection Electron Microscopy ◽  
Low Energy Electron ◽  
Surface Nature

The growth of semiconductors, superconductors, metals, and other insulators has been investigated using alumina substrates in a variety of orientations. The surface state of the alumina (for example surface reconstruction and step nature) can be expected to affect the growth nature and quality of the epilayers. As such, the surface nature has been studied using a number of techniques including low energy electron diffraction (LEED), reflection electron microscopy (REM), transmission electron microscopy (TEM), molecular dynamics computer simulations, and also by theoretical surface energy calculations. In the (0001) orientation, the bulk alumina lattice can be thought of as a layered structure with A1-A1-O stacking. This gives three possible terminations of the bulk alumina lattice, with theoretical surface energy calculations suggesting that termination should occur between the Al layers. Thus, the lattice often has been described as being made up of layers of (Al-O-Al) unit stacking sequences. There is a 180° rotation in the surface symmetry of successive layers and a total of six layers are required to form the alumina unit cell.

Modifications of a JEOL 2000EX TEM for insSitu surface studies

1993 ◽  
Vol 51 ◽  
pp. 640-641
Author(s):  
Michael T. Marshall ◽  
Xianghong Tong ◽  
J. Murray Gibson
Keyword(s):  
Electron Diffraction ◽  
Surface Science ◽  
Film Growth ◽  
High Vacuum ◽  
High Energy ◽  
Energy Electron ◽  
Ultra High Vacuum ◽  
Transmission Electron ◽  
Fundamental Insight

We have modified a JEOL 2000EX Transmission Electron Microscope (TEM) to allow in-situ ultra-high vacuum (UHV) surface science experiments as well as transmission electron diffraction and imaging. Our goal is to support research in the areas of in-situ film growth, oxidation, and etching on semiconducter surfaces and, hence, gain fundamental insight of the structural components involved with these processes. The large volume chamber needed for such experiments limits the resolution to about 30 Å, primarily due to electron optics. Figure 1 shows the standard JEOL 2000EX TEM. The UHV chamber in figure 2 replaces the specimen area of the TEM, as shown in figure 3. The chamber is outfitted with Low Energy Electron Diffraction (LEED), Auger Electron Spectroscopy (AES), Residual Gas Analyzer (RGA), gas dosing, and evaporation sources. Reflection Electron Microscopy (REM) is also possible. This instrument is referred to as SHEBA (Surface High-energy Electron Beam Apparatus).The UHV chamber measures 800 mm in diameter and 400 mm in height. JEOL provided adapter flanges for the column.

Growth of Epitaxial IrSi3 Layers on Si(111)

1989 ◽  
Vol 160 ◽  
Author(s):  
T. L. Lin ◽  
C. W. Nieh
Keyword(s):  
Surface Morphology ◽  
Molecular Beam ◽  
Solid Phase ◽  
Single Mode ◽  
Growth Conditions ◽  
Tem Analysis ◽  
Mbe Growth ◽  
Good Surface ◽  
Transmission Electron

AbstractEpitaxial IrSi3 films have been grown on Si (111) by molecular beam epitaxy (MBE) at temperatures ranging from 630 to 800 °C and by solid phase epitaxy (SPE) at 500 °C. Good surface morphology was observed for IrSi3 layers grown by MBE at temperatures below 680 °C, and an increasing tendency to form islands is noted in samples grown at higher temperatures. Transmission electron microscopy (TEM) analysis reveals that the IrSi3 layers grow epitaxially on Si(111) with three epitaxial modes depending on the growth conditions. For IrSi3 layers grown by MBE at 630 °C, two epitaxial modes were observed with ~ 50% area coverage for each mode. Single mode epitaxial growth was achieved at a higher MBE growth temperature, but with island formation in the IrSi3 layer. A template technique was used with MBE to improve the IrSi3 surface morphology at higher growth temperatures. Furthermore, single-crystal IrSi3 was grown on Si(111) at 500 °C by SPE, with annealing performed in-situ in a TEM chamber.

Temperature-Dependent Tribological Improvements in Low-Energy Nitrogen Ion Implanted Vanadium-Titanium Alloys

2005 ◽  
Author(s):  
C. Ballesteros ◽  
J. A. Garci´a ◽  
M. I. Orti´z ◽  
R. Rodri´guez ◽  
M. Varela
Keyword(s):  
Tribological Properties ◽  
Low Energy ◽  
Temperature Dependent ◽  
Structural Modifications ◽  
Nanocomposite Layer ◽  
Implantation Temperature ◽  
Transmission Electron ◽  
Nitrogen Ion ◽  
Tribological Characterization

A detailed tribological characterization of low-energy, nitrogen implanted V5 at. %Ti alloy is presented. Samples were nitrogen-implanted at an accelerating voltage of 1.2 kV and 1 mA/cm2, up to a dose of 1E19 ions/cm2. The tribological properties of the alloys: microhardness, friction coefficient and wear resistance, have improved after ion implantation and this improvement increases as the implantation temperature increases. The microstructure of the alloys were analysed by transmission electron microscopy. A direct correlation between structural modifications of the nitrogen implanted layer and the improvement in their tribological properties is obtained. For samples implanted at 848 K a nanocomposite layer where the reinforcement particles are TiN precipitates forms. TiN precipitation appears as the responsible of the improvement in the tribological properties.

ION CHANNELING AND PIXE STUDIES OF S IMPLANTATION IN GaAs

1992 ◽  
Vol 02 (02) ◽  
pp. 151-159
Author(s):  
LIU SHIJIE ◽  
WANG JIANG ◽  
HU ZAOHUEI ◽  
XIA ZHONGHUONG ◽  
GAO ZHIGIANG ◽  
...  
Keyword(s):  
Room Temperature ◽  
Dislocation Loops ◽  
Good Recovery ◽  
Electrical Measurements ◽  
X Ray ◽  
Defect Complexes ◽  
Ion Channeling ◽  
Transmission Electron ◽  
Activation Efficiency ◽  
Very High

GaAs (100) crystals were implanted with 100 keV S+ to a dose of 3×1015 cm−2 in a nonchanneling direction at room temperature, and treated with rapid thermal annealing (RTA). He+ Rutherford backscattering and particle-induced X-ray emission in channeling mode in combination with transmission electron microscopy (TEM) were used to study the damage and the lattice location of S atoms. It is revealed that the RTA at 950 °C for 10 sec has resulted in a very good recovery of crystallinity with a few residual defects in the form of dislocation loops, and a very high substitutionality (~90%). The activation efficiency and the Hall mobility of the implanted samples are found to be low after the electrical measurements. Based on these results an extended dopant diffusion effect for the residual defects and a correlation between the electrical properties and defect complexes are suggested.

Sign in / Sign up

Export Citation Format

Share Document