Summary of New Insight into Electron Transport in Metals

This paper gives a summary of a new insight into basic electron transport characteristics in crystalline elemental metals. The general expressions based on the Fermi-Dirac distribution of the effective density of the randomly moving electrons, their diffusion coefficient, drift mobility, and other characteristics, including the Einstein relation between diffusion coefficient and drift mobility, are presented. It is shown that the creation of the randomly moving electrons due to lattice atom vibrations produces the same number of electronic defects, which cause scattering of the randomly moving electrons and related transport characteristics.

Conclusive Research Design and Development of the Effect of Linear Deformation on Some Debye Properties of Metals

This Work, Debye Temperature And Debye Frequency Of Metals Were Computed And Studied Using Quantum Einstein Theory. The Electron Density Parameters Of Strained Metals Is Obtained And Used In The Computation.. The Results Obtained Revealed That There Is Agreement Between The Computed And Experimental Values Of Debye Temperature And Debye Frequency. This Shows That The Model Can Be Used To Study Debye Properties Of Metals. The Debye Temperature And Debye Frequency Obtained Are More Concentrated In The High Density Limit. This Revealed That Debye Temperature And Debye Frequency Of Metals Depend On The Electronic Concentration. Also, The Experimental Value Of Debye Temperature And Debye Frequency Is Higher Than The Computed Value, This Is Because Of Some Factor Which Debye Temperature And Debye Frequency Relied On That The Theory Failed To Account For. Debye Temperature And Debye Frequency Of Metals Reduces As Strain Increase. This Shows That As Strain Increase, Space Between Lattice Atom Increase Which Reduces Strength Of Electron Interaction And There-By Forces Debye Temperature, Debye Frequency To Decrease As Deformation Increase. This Behavior Of Metals Reveal That Debye Temperature And Debye Frequency Is Greatly Affected By Deformation.

Low Energy Si Bombardment Effects on Epitaxial Si Growth

ABSTRACTMolecular dynamics simulations were used to follow low-energy ion/surface interactions in Si MBE including kinetic energy redistribution in the lattice as a function of time, projectile and lattice atom trajectories, and the nature, number, and depth of residual defects. The simulations were carried out using the Tersoff many-body potential for Si. Irradiation events were initiated with 10 and 50 eV Si atoms incident normal to the Si(001)2xl surface at an array of points in the primitive surface unit cell. Epitaxy, exchange reactions, and defect (vacancy and interstitial) formations were observed. Quasidynamic simulations suggested that the interstitials preferentially diffuse toward the surface and are annealed out over times corresponding to monolayer deposition at typical Si MBE growth temperatures.

Simulations of Low-Energy Ion/Surface Interaction Effects During Epitaxial Film Growth.

ABSTRACTMolecular dynamics simulations were used to follow low-energy ion/surface interactions including kinetic energy redistribution in the lattice as a function of time, projectile and lattice atom trajectories, and the nature, number, and depth of residual defects. The simulations were carried out using the Tersoff many-body potential for Si. Irradiation events were initiated with 10 and 50 eV Si atoms incident normal to the Si(001)2×l surface at an array of points in the primitive surface unit cell. Ion-induced epitaxial growth was observed due to both Si projectiles and Si lattice atoms coming to rest at epitaxial positions through direct deposition as well as site exchange occurring via diffusional and collisional processes. 36 simulations of 10 eV (50 eV) Si bombardment resulted in an average stopping position of 0.5 Å (1.6 Å) below the surface, 10 (13) epitaxial events, 7 (24) exchange events between the projectile and a lattice atom, and the formation of 15 (63) interstitials and 0 (36) vacancies. The interstitials preferentially diffuse toward the surface and are annealed out over times corresponding to monolayer deposition at typical Si MBE growth temperatures.