Passivation of Silicon Dioxide Surface Hydroxyl Groups to Control Selectivity During Chemical Vapor Deposition of Copper from Copper(I) Compounds

1993 ◽  
Vol 315 ◽  
Author(s):  
Ajay Jain ◽  
J. Farkas ◽  
T T. Kodas ◽  
M. J. Hampden-Smith ◽  
A.A. Gelatos ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Hydroxyl Groups ◽  
Surface Hydroxyl ◽  
Surface Hydroxyl Groups

scholarly journals The Early Steps of Molecule-to-Material Conversion in Chemical Vapor Deposition (CVD): A Case Study

Molecules ◽  
2021 ◽  
Vol 26 (7) ◽  
pp. 1988
Author(s):  
Davide Barreca ◽  
Ettore Fois ◽  
Alberto Gasparotto ◽  
Chiara Maccato ◽  
Mario Oriani ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Density Functional ◽  
Chemical Vapor ◽  
Molecular Geometry ◽  
Ab Initio Molecular Dynamics ◽  
Growth Surface ◽  
Hydroxyl Groups ◽  
Surface Hydroxyl ◽  
Order Of Magnitude

Transition metal complexes with β-diketonate and diamine ligands are valuable precursors for chemical vapor deposition (CVD) of metal oxide nanomaterials, but the metal-ligand bond dissociation mechanism on the growth surface is not yet clarified in detail. We address this question by density functional theory (DFT) and ab initio molecular dynamics (AIMD) in combination with the Blue Moon (BM) statistical sampling approach. AIMD simulations of the Zn β-diketonate-diamine complex Zn(hfa)2TMEDA (hfa = 1,1,1,5,5,5-hexafluoro-2,4-pentanedionate; TMEDA = N,N,N′,N′-tetramethylethylenediamine), an amenable precursor for the CVD of ZnO nanosystems, show that rolling diffusion of this precursor at 500 K on a hydroxylated silica slab leads to an octahedral-to-square pyramidal rearrangement of its molecular geometry. The free energy profile of the octahedral-to-square pyramidal conversion indicates that the process barrier (5.8 kcal/mol) is of the order of magnitude of the thermal energy at the operating temperature. The formation of hydrogen bonds with surface hydroxyl groups plays a key role in aiding the dissociation of a Zn-O bond. In the square-pyramidal complex, the Zn center has a free coordination position, which might promote the interaction with incoming reagents on the deposition surface. These results provide a valuable atomistic insight on the molecule-to-material conversion process which, in perspective, might help to tailor by design the first nucleation stages of the target ZnO-based nanostructures.

Low-pressure chemical vapor deposition of silicon dioxide using diethylsilane

1993 ◽  
Vol 5 (12) ◽  
pp. 1710-1714 ◽  
Author(s):  
R. A. Levy ◽  
J. M. Grow ◽  
G. S. Chakravarthy
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical

scholarly journals Chemical Vapor Deposition of High‐Quality Large‐Sized MoS 2 Crystals on Silicon Dioxide Substrates

2016 ◽  
Vol 3 (8) ◽  
pp. 1500033 ◽  
Author(s):  
Jianyi Chen ◽  
Wei Tang ◽  
Bingbing Tian ◽  
Bo Liu ◽  
Xiaoxu Zhao ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
High Quality

Development of Low Temperature Silicon Nitride and Silicon Dioxide Films by Inductively-Coupled Plasma Chemical Vapor Deposition

1999 ◽  
Vol 573 ◽  
Author(s):  
J. W. Lee ◽  
K. D. Mackenzie ◽  
D. Johnson ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Silicon Nitride ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Inductively Coupled Plasma ◽  
Chemical Vapor ◽  
Plasma Chemical Vapor Deposition ◽  
Inductively Coupled ◽  
Silicon Dioxide Films

ABSTRACTHigh-density plasma technology is becoming increasingly attractive for the deposition of dielectric films such as silicon nitride and silicon dioxide. In particular, inductively-coupled plasma chemical vapor deposition (ICPCVD) offers a great advantage for low temperature processing over plasma-enhanced chemical vapor deposition (PECVD) for a range of devices including compound semiconductors. In this paper, the development of low temperature (< 200°C) silicon nitride and silicon dioxide films utilizing ICP technology will be discussed. The material properties of these films have been investigated as a function of ICP source power, rf chuck power, chamber pressure, gas chemistry, and temperature. The ICPCVD films will be compared to PECVD films in terms of wet etch rate, stress, and other film characteristics. Two different gas chemistries, SiH4/N2/Ar and SiH4/NH3/He, were explored for the deposition of ICPCVD silicon nitride. The ICPCVD silicon dioxide films were prepared from SiH4/O2/Ar. The wet etch rates of both silicon nitride and silicon dioxide films are significantly lower than films prepared by conventional PECVD. This implies that ICPCVD films prepared at these low temperatures are of higher quality. The advanced ICPCVD technology can also be used for efficient void-free filling of high aspect ratio (3:1) sub-micron trenches.

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

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