Development of Crystallographic Texture in RF Sputter Deposited CoCrTa/Cr Thin Films

1993 ◽  
Vol 313 ◽  
Author(s):  
Y. C. Feng ◽  
D. E. Laughlin ◽  
D. N. Lambeth

ABSTRACTIt is well known that Cr sputtered on glass or NiP/Al substrates has either the (002) or (110) crystallographic texture (depending on the substrate temperature) and that the Co-alloy layers which are deposited on the Cr underlayers have either the (1120) or (1011) textures respectively. However, the dependence of the crystallographic textures on other sputtering parameters is not clear. We report here on the study of the dependence of crystallographic textures of CoCrTa/Cr films on substrate bias. It is found that both Cr (110) and Cr (002) textures can form at elevated temperature, depending on the substrate bias. The development of the crystallographic texture is discussed with a Model. It is also found that the epitaxy of CoCrTa layer depends on the sputtering conditions of both the Cr and the CoCrTa layers. The extrinsic magnetic properties (such as He, S and S*) of thin films with various textures are also presented. By controlling the sputtering procedure, the effects of crystallographic textures on magnetic properties were separated from the effects of film Morphology.

2014 ◽  
Vol 28 (06) ◽  
pp. 1450043 ◽  
Author(s):  
Shuyun Wang ◽  
Yuanmei Gao ◽  
Tiejun Gao ◽  
Yuan He ◽  
Hui Zhang ◽  
...  

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.


2007 ◽  
Vol 546-549 ◽  
pp. 2175-2178
Author(s):  
Liang Qiao ◽  
Xiao Fang Bi

In this work, MgO thin films were prepared by rf magnetron sputtering technique on two different substrates of Si (100) wafers and amorphous glasses. The influence of different deposition conditions such as substrate temperature, Ar pressure, film thicknesses on the crystal structure of MgO thin films were studied. BaTiO3 ferroelectric thin films were subsequently deposited on the MgO films. The XRD results showed that the orientation of MgO films was dependent greatly on the substrate temperature. A highly (100) oriented MgO thin films were obtained at the temperature of 800°C. The crystallographic texture has been deteriorated rapidly as the argon pressure decreased to 1.0 Pa. It has been also found that the film thickness has a great influence on the film orientation. High substrate temperature, high argon pressure and a certain thickness appear to be favorable for formation of a good texture for the MgO films. The structure and microstructure of the BaTiO3 films were various both with deposition conditions and with the crystallographic texture of the MgO. A highly (001) oriented ferroelectric BTO film was obtained on the MgO films with an optimized deposition conditions.


2016 ◽  
Vol 52 (7) ◽  
pp. 1-4 ◽  
Author(s):  
Alessia Niesen ◽  
Christian Sterwerf ◽  
Manuel Glas ◽  
Jan-Michael Schmalhorst ◽  
Gunter Reiss

1993 ◽  
Vol 5 (4) ◽  
pp. 116
Author(s):  
Mitsuhiro WADA ◽  
Atsushi YAMAMOTO ◽  
Akiko ICHIKAWA ◽  
Masanori TAKI ◽  
Masaru UCHIYAMA ◽  
...  

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