scholarly journals Effects of Substrate Temperature and Annealing Treatment on the Magnetic Properties of Giant-Magnetostrictive (Tb,Dy)Fe2 Thin Films.

1993 ◽  
Vol 5 (4) ◽  
pp. 116
Author(s):  
Mitsuhiro WADA ◽  
Atsushi YAMAMOTO ◽  
Akiko ICHIKAWA ◽  
Masanori TAKI ◽  
Masaru UCHIYAMA ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Substrate Temperature ◽  
Annealing Treatment

Effects of ZnO layer on anisotropy magnetoresistance of Ni81Fe19 films

2014 ◽  
Vol 28 (06) ◽  
pp. 1450043 ◽  
Author(s):  
Shuyun Wang ◽  
Yuanmei Gao ◽  
Tiejun Gao ◽  
Yuan He ◽  
Hui Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Layer Thickness ◽  
Magnetic Thin Films ◽  
Anisotropic Magnetoresistance ◽  
Experimental Conditions ◽  
Method Effects ◽  
20 Nm

A series of Ta (4 nm)/ ZnO (t nm )/ Ni 81 Fe 19 (20 nm)/ ZnO (t nm )/ Ta (3 nm) magnetic thin films were prepared on lower experimental conditions by magnetron sputtering method. Effects of ZnO layer thickness and substrate temperature on anisotropic magnetoresistance and magnetic properties of these Ni 81 Fe 19 films have been investigated. The experiment results show that the anisotropic magnetoresistance value of the Ni 81 Fe 19 film is enhanced with the increasing of the inserted ZnO layer thickness. When the ZnO thickness is 2 nm, the anisotropic magnetoresistance value achieves the maximum. In addition, the anisotropic magnetoresistance of the Ni 81 Fe 19 film is also enhanced with the increasing of substrate temperature, and when the temperature is 450°C, the anisotropic magnetoresistance reaches the maximum. The anisotropic magnetoresistance value of 20 nm Ni 81 Fe 19 films with 2 nm ZnO layer can achieve 3.63% at 450°C which is enhanced 11.6% compare with the films without ZnO layer.

Effect of Stress-induced Magnetic Anisotropy on the Properties of Giant Magnetostrictive Single Layer and Multilayer Thin Films

2004 ◽  
Vol 855 ◽  
Author(s):  
J. H. Tan ◽  
V. H. Guerrero ◽  
R. C. Wetherhold ◽  
W. A. Anderson
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Magnetic Anisotropy ◽  
Rf Sputtering ◽  
Single Layer ◽  
Annealing Treatment ◽  
Deposition Process ◽  
Vacuum System ◽  
Internal Stresses ◽  
Sensors And Actuators

ABSTRACTGiant magnetostrictive thin films deposited on nonmagnetic substrates can constitute effective sensors and actuators for microdevices. In this work, we investigated the effects of a stress-induced anisotropy on the magnetic properties of Tb0.4Fe0.6, Fe0.5Co0.5 single layer films and [Tb0.4Fe0.6/Fe0.5Co0.5]n multilayers deposited on Si substrates. The magnetostrictive thin films were fabricated by means of RF sputtering and were subjected to a post-deposition annealing treatment. The uniaxial magnetic anisotropy was induced by bending the substrate before deposition and then allowing it to resume its original flat shape after depositing the film. The heat treatment was performed in a vacuum system with a vacuum of 10−6 Torr. The magnetic properties of the fabricated specimens were measured using a SQUID. SEM and XRD analyses were performed to ensure that the thermal treatment would relax the internal stresses induced during the deposition process without crystallizing the film. The thickness of the single layer thin films studied was between 300 and 800 nm while multilayer samples consisted of 6 layers with each layer thickness ranged from about 20 to 40 nm. Compared to single layer samples, multilayer samples with stress anneal growth exhibited an improvement in magnetic saturation by a factor of two while maintaining a low coercive field. Manipulations of the magnitude and direction of magnetic anisotropy was observed by introducing various values of tensile and compressive stress into the film.

Effect of substrate temperature on structure and magnetic properties of Co2FeSi/Si(001) thin films

2015 ◽  
Author(s):  
Binoy Krishna Hazra ◽  
T. Prasanna Kumari ◽  
M. Manivel Raja ◽  
S. V. Kamat ◽  
S. Srinath
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Substrate Temperature
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