Growth Mechanisms of YBa2Cu3O7-δ Thin Films Post Annealed at a Low Oxygen Partial Pressure

1993 ◽  
Vol 312 ◽  
Author(s):  
S. Y. Hou ◽  
D. J. Werder ◽  
Julia M. Phillips ◽  
J. H. Marshall
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Early Stage ◽  
Growth Mechanisms ◽  
Low Oxygen ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Transmission Electron

AbstractThe growth mechanism of YBa2Cu3O 7-= thin films grown by the BaF2 post annealing process at low oxygen partial pressure have been studied by transmission electron microscopy. Under the annealing conditions of po2 = 4 Torr and 700°C, BaCuO2 and Y2 Cu2O5 precipitates develop from stoichiometric film precursors of YBCO during annealing. A growth model is proposed based on the observations. In addition, early stage nucleation and growth of both c- and a-axis oriented grains at the substrate interface were observed in quench annealed cross-sectional samples. 90° [100] symmetrical boundaries form between the a- and c-axis oriented grains. The possible effects of these boundaries are discussed.

Improvement in D-E Hysteresis Curve Squareness of PZT Thin Films - Effect of Oxygen Partial Pressure in High-Pressure Post-Annealing

2003 ◽  
Vol 52 (1) ◽  
pp. 137-145
Author(s):  
Junichi Karasawa ◽  
Taku Aoyama ◽  
Takeshi Kijima ◽  
Eiji Natori ◽  
Tatsuya Shimoda
Keyword(s):  
Thin Films ◽  
High Pressure ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Hysteresis Curve ◽  
Pzt Thin Films ◽  
Post Annealing ◽  
Effect Of Oxygen

In Situ Deposition of YBCO Thin Films by Sputtering under Low Oxygen Partial Pressure

1994 ◽  
Vol 33 (Part 2, No. 5B) ◽  
pp. L718-L721 ◽  
Author(s):  
Yong Ki Park ◽  
Keunseop Park ◽  
Soon-Gul Lee ◽  
Dong Chan Shin ◽  
Jong-Chul Park
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Ybco Thin Films ◽  
In Situ Deposition

Effect of Oxygen Partial Pressure on the Morphological Properties and the Photocatalytic Activities of Titania Thin Films on Unheated Substrates by Sputtering Deposition Method

2013 ◽  
Vol 770 ◽  
pp. 18-21 ◽  
Author(s):  
P. Pungboon Pansila ◽  
Nirun Witit-Anun ◽  
Surasing Chaiyakun
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Anatase Phase ◽  
Rutile Phase ◽  
Morphological Properties ◽  
Low Oxygen ◽  
Working Pressure ◽  
Sputtering Deposition ◽  
Photocatalytic Activities

Titania (TiO2) thin films have been deposited using d.c. reactive unbalance magnetron sputtering on unheated substrate by various different oxygen partial pressures while working pressure and sputtering power were kept constant. A pure metallic titanium disk was used for sputtering target in atmospheric of the mixture gases between argon and oxygen. The X-ray diffraction (XRD) and atomic force microscopy (AFM) were used for characterization of characteristics structure and surface morphologies of the films, respectively. The optical transmission of the films were measured by spectrophotometer. The photocatalytic activities of the films were investigated from measurement of methylene blue degradation by using absorbance value after UV irradiation for 6 hr. The results show that the crystalline structures of the films showed the presence of single-anatase phase and mixed-anatase/rutile phase of TiO2 thin films. The surface morphology and photocatalytic activities of the films depend on oxygen partial pressure that grains size, surface roughness and thickness of the films were deceased when increasing oxygen partial pressure due to poisoning phenomenon and the high reactive gases. In addition, it was found that all TiO2 thin films were deposited by different oxygen partial pressure exhibit a good transparentness. Moreover, it was found that the TiO2 thin films deposited by used low oxygen partial pressure and single-anatase phase exhibited the best photocatalytic activity.

Role of Oxygen Vacancies on the Ferroelectric Properties of Pzt Thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Chi Kong Kwok ◽  
Seshu B. Desu
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Vacancy Concentration ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Low Oxygen ◽  
Partial Pressures ◽  
Pzt Films

AbstractThe properties of ferroelectric thin films can be significantly influenced by the presence of point defects. The concentration of vacancies presented in these thin films is known to be one of the key parameters causing the degradation of these films when these films are subjected to polarization reversals.To study the effects of the vacancy concentration on the ferroelectric properties, sol gel PZT films and powders were annealed in different oxygen partial pressures. For the PZT films, the reduction of oxides to pure metals was not observed even with films annealed at 2×10−5 atmosphere of oxygen partial pressure. Samples annealed at low oxygen partial pressure (for instance, 10−3 and 2×10−5 atmosphere), which has more Pb and O2 depletions and consequently has more Pb and O2 vacancies, cannot be switched easily. The ratios of coercive field after and before fatigue increase as the defect concentrations of the annealed samples increase.

Superior microwave properties by post‐annealing YBa2Cu3O7thin films at low oxygen partial pressure

1992 ◽  
Vol 60 (26) ◽  
pp. 3310-3312 ◽  
Author(s):  
A. Mogro‐Campero ◽  
L. G. Turner ◽  
A. M. Kadin ◽  
D. S. Mallory
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Microwave Properties ◽  
Low Oxygen ◽  
Post Annealing
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