Superior microwave properties by post‐annealing YBa2Cu3O7thin films at low oxygen partial pressure

1992 ◽  
Vol 60 (26) ◽  
pp. 3310-3312 ◽  
Author(s):  
A. Mogro‐Campero ◽  
L. G. Turner ◽  
A. M. Kadin ◽  
D. S. Mallory
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Microwave Properties ◽  
Low Oxygen ◽  
Post Annealing

Growth Mechanisms of YBa2Cu3O7-δ Thin Films Post Annealed at a Low Oxygen Partial Pressure

1993 ◽  
Vol 312 ◽  
Author(s):  
S. Y. Hou ◽  
D. J. Werder ◽  
Julia M. Phillips ◽  
J. H. Marshall
Keyword(s):  
Thin Films ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Early Stage ◽  
Growth Mechanisms ◽  
Low Oxygen ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Post Annealing ◽  
Transmission Electron

AbstractThe growth mechanism of YBa2Cu3O 7-= thin films grown by the BaF2 post annealing process at low oxygen partial pressure have been studied by transmission electron microscopy. Under the annealing conditions of po2 = 4 Torr and 700°C, BaCuO2 and Y2 Cu2O5 precipitates develop from stoichiometric film precursors of YBCO during annealing. A growth model is proposed based on the observations. In addition, early stage nucleation and growth of both c- and a-axis oriented grains at the substrate interface were observed in quench annealed cross-sectional samples. 90° [100] symmetrical boundaries form between the a- and c-axis oriented grains. The possible effects of these boundaries are discussed.

Quantitative evaluation of the oxidation behavior of ZrB2-15 vol.%SiC at a low oxygen partial pressure

Vacuum ◽  
2013 ◽  
Vol 88 ◽  
pp. 98-102 ◽  
Author(s):  
Ai Momozawa ◽  
Rong Tu ◽  
Takashi Goto ◽  
Yuuki Kubota ◽  
Hiroshi Hatta ◽  
...  
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Quantitative Evaluation ◽  
Oxidation Behavior ◽  
Low Oxygen

Enhanced superconductivity in Nd1+xBa2-xCu3O7+δby low oxygen partial pressure annealing

1994 ◽  
Vol 23 (11) ◽  
pp. 1117-1120 ◽  
Author(s):  
M. J. Kramer ◽  
A. Karion ◽  
K. W. Dennis ◽  
M. Park ◽  
R. W. McCallum
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Low Oxygen ◽  
Enhanced Superconductivity

Tensile Properties and Creep Behavior of SiC-Based Fibers under Various Oxygen Partial Pressures

2005 ◽  
Vol 475-479 ◽  
pp. 1333-1336 ◽  
Author(s):  
Jan Ji Sha ◽  
J.S. Park ◽  
Tatsuya Hinoki ◽  
Akira Kohyama ◽  
J. Yu
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Tensile Properties ◽  
Creep Behavior ◽  
Elevated Temperatures ◽  
Low Oxygen ◽  
X Ray Diffraction ◽  
Sic Fibers ◽  
Partial Pressures ◽  
Ar Gas

Three kinds of atmospheres (air, highly-pure Ar and ultra highly-pure Ar gas) with different oxygen partial pressures were applied to investigate the tensile properties and creep behavior of SiC fibers such as Hi-NicalonTM and TyrannoTM-SA. These fibers were annealed and crept at elevated temperatures ranging from1273-1773 K in such environments. After annealing at 1773 K, the room temperature tensile strengths of SiC-based fibers decreased with decreasing the oxygen partial pressure and the near stoichiometric fiber TyrannoTM-SA shows excellent strength retention. At temperatures above the 1573 K, the creep resistance of SiC fibers evaluated by bending stress relaxation (BSR) method under high oxygen partial pressure was lower than that of in low oxygen partial pressure. The microstructural features on these fibers were examined by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

Preparation of NdBaCuO superconductor by zone-melting under low oxygen partial pressure

2003 ◽  
Vol 386 ◽  
pp. 241-244 ◽  
Author(s):  
Zhanguo Fan ◽  
Weiying Gao ◽  
Fenghua Li ◽  
Jue Wang ◽  
Deahua Soh
Keyword(s):  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Zone Melting ◽  
Low Oxygen
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